HARRIS SEMICOND SECTOR D44C Series 5bE D MM 4302271 OO40790 589 BHAS File Number 2343 7-33-05 Silicon N-P-N Transistors Complementary to the D45C Series General-Purpose Types for Medium-Power Switching and Amplifier Applications Features: s Very low collector saturation voltage [0.5V typ. @ 3.0A Ic] a Excellent linearity = Fast switching D44C-series n-p-n power transistors are designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequen- cies from DC to greater than 1.0 MHz, series, shunt and switching regulators, and low and high frequency inverters/ converters. MAXIMUM RATINGS (Ta = 25 C) (unless otherwise specified) TERMINAL DESIGNATIONS c I (FLANGE) To P VIEW 92CS-39969 JEDEC TO-220AB RATING SYMBOL | D44C1,2,3 | D44C4,5,6 | D44C7,8,9 |D44C10, 11, 12 | UNITS Collector-Emitter Voltage VcEO 30 45 60 80 Volts Collector-Emitter Voltage Voces 40 55 70 90 Voits Emitter Base Voltage Veso 5 5 5 5 Volts Collector Current Continuous lo 4 4 4 4 A Peak(t) lou 6 6 8 6 Base Current Continuous lB 2 2 2 2 A Total Power Dissipation @ Ta? 25C Pp 1.67: 1.67 1.67 6 Watts @ Tg = 25C 30 30 30 30 Operating and Storage Junction Ty.Tstg | -85t0 +150 | -85to +150 | -85t0 +150} -85t0+150 | C THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient Rega 75 75 76 75 C/W Thermal Resistance, Junction to Case Rac 4.2 4.2 4.2 4.2 CAN Maximum Lead Temperature for Soldering T +260 +260 +260 +260 C Purposes: 4" from Case for 5 Seconds L (1) Puise Test Pulse Width = 300ms Duty Cycle <= 2%. 2-368 HARRIS SEMICOND SECTOR SBE D MW 4302271 OO40O791 415 MBHAS D44C Series ELECTRICAL CHARACTERISTICS (Te = 25C) (unless otherwise specified) { CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT OFF CHARACTERISTICS") 1-33-05 Collector-Emitter Sustaining Voltage . D44C1, 2,3 VoEo(sus) 30 - _ Volts (Ic = 100mA) D44C4, 5, 6 45 D44C7, 8,9 60 - - D44C10, 11, 12 80 _ Collector Cutoff Current (Voe = Rated VcEs) lces = 10 vA eves ome Current lEBO _ 100 BA SECOND BREAKDOWN | Second Breakdown with Base Forward Biased | FBSOA | SEE FIGURE 3 ON CHARACTERISTICS") OC Current Gain D44C1, 4, 7, 10 Nre 25 - - _ (Ig = 0.2A, Voge = 1V) D44C2, 5, 8, 11 100 _ 220 D44C3, 6, 9, 12 40 - 120 (Ie = 1A, Voce = 1Y) p4act, 4 7, 10 hre 10 lo = 2A, Vee = 1V) 2, 8, 20 _ _ tle ce=) D44C3, 6, 9, 12 20 - = Collector-Emitter Saturation Voltage (Ig = 1A, Ig = 50mA) D44C2,5,8,11 | Voe(sat 0.5 Volts D44C3, 6, 9, 12 - _ 0.5 (Io = 1A, Ip = 100mA) D44C1, 4, 7, 10 0.5 Base-Emitter Saturation Voltage (Ic = 1A, Ip = 100mA) VBE(sat) - _ 1.3 Volts DYNAMIC CHARACTERISTICS Collector Capacitance (Vcp = 10V, f = 1Miz) Ccpo _ - 100 pF Current-Gain Bandwidth Product (Ic = 20mA, VE = 4V) tr 50 - MHz SWITCHING CHARACTERISTICS Resistive Load Delay Time + | = = =O1A + 100 _ ns Rise Time Io = 1A, Ip = Ip2 = 0.1A, ta + tr Storage Time ts _ 500 _ = 30A, tp = 25 ysec Fall Time Voc = 30A, tp t = 75 = (1) Pulse Test PW = 300ms Duty Cycle < 2%. | qi POWER TRANSISTORS HARRIS SEMICOND SECTOR D44C Series Ig - COLLECTOR CURRENT - AMPERES 8B 8 88. Ig COLLECTOR CURRENT - AMPERES FIG. 1 TYPICAL hee VS. Ic 4 yw SEC PULSES PULSES: 100 SEC PULSES 10004 SEC PULSES MAX OC POWER DISSIPATION AT 70C CASE b aan FORWARD BIASED OPERATION DUTY CYCLE = 50% To s70C VES 23 VcES MAX 04404, 5,6 VGES MAX. DA4G7, 8,9 Ves MAX 044010, 11, 12 - 1 2 4 S08 410 20 VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS FIG.3 SAFE REGION OF OPERATION 0 & -80 100 2-370 SbE D MM 430227, OO4O?92 351, MBHAS T~33-05 SATURATION VOLTAGE S-VOLTS 2 ol to Te~ COLLECTOR CURRENT- AMPERES FIG.2 TYPICAL SATURATION VOLTAGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE - C/WATT TIME - SECONDS FIG.4 MAXIMUM TRANSIENT THERMAL IMPEDANCE