STD65NF06 STP65NF06 N-channel 60V - 11.5m - 60A - DPAK/TO-220 STripFETTM II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14m 60A STP65NF06 60V <14m 60A Standard level gate drive 3 3 1 100% avalanche tested DPAK 1 2 TO-220 Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size"TM strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STD65NF06 D65NF06 DPAK Tape & reel STP65NF06 P65NF06 TO-220 Tube July 2006 Rev 1 1/14 www.st.com 14 Contents STD65NF06 - STP65NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STD65NF06 - STP65NF06 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage Value Unit 60 V 20 V ID Drain current (continuous) at TC = 25C 60 A ID Drain current (continuous) at TC = 100C 42 A Drain current (pulsed) 240 A Total dissipation at TC = 25C 110 W Derating Factor 0.73 W/C Peak diode recovery voltage slope 10 V/ns Single pulse avalanche energy 390 mJ -55 to 175 C IDM (1) Ptot dv/dt (2) EAS (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD 60A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting Tj = 25 C, ID = 30A, VDD = 40V Table 2. Symbol Thermal data Parameter TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Rthj-pcb(1) Tl Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose (for 10sec. 1.6mm from case) DPAK 1.36 Unit C/W 62.5 -- C/W -- 50 C/W 300 -- C/W 1. When mounted on FR-4 of 1 inch, 2 oz Cu 3/14 Electrical characteristics 2 STD65NF06 - STP65NF06 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250A, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating,@125C IGSS Gate-body leakage current (VDS = 0) VGS = 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250A RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A Table 4. Symbol Test conditions Typ. Max. 60 Unit V 1 10 A A 100 nA 4 V 11.5 14 m Typ. Max. Unit 2 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS= 25V, ID = 30A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance td(on) tr td(off) tf Qg Qgs Qgd Min. 50 S VDS = 25V, f = 1MHz, VGS = 0 1700 400 135 pF pF pF Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30V, ID = 30A RG = 4.7 VGS = 10V (see Figure 12) 15 60 40 16 ns ns ns ns Total gate charge Gate-source charge Gate-drain charge VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7 (see Figure 13) 54 10 20 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 4/14 Min. 75 nC nC nC STD65NF06 - STP65NF06 Table 5. Symbol Electrical characteristics Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 60A, VGS = 0 Reverse recovery time ISD = 60A, di/dt = 100A/s, Reverse recovery charge VDD = 25V, Tj = 150C Reverse recovery current (see Figure 14) 70 150 4.4 Max. Unit 60 240 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 5/14 Electrical characteristics STD65NF06 - STP65NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized breakdown voltage temperature Figure 6. Static drain-source on resistance 6/14 STD65NF06 - STP65NF06 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Test circuit 3 STD65NF06 - STP65NF06 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/14 Figure 17. Switching time waveform STD65NF06 - STP65NF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/14 Package mechanical data STD65NF06 - STP65NF06 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/14 TYP 0.154 0.645 28.90 1.137 oP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STD65NF06 - STP65NF06 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8 0 8 0068772-F 11/14 Packing mechanical data 5 STD65NF06 - STP65NF06 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD65NF06 - STP65NF06 6 Revision history Revision history Table 6. Revision history Date Revision 24-Jul-2006 1 Changes First release 13/14 STD65NF06 - STP65NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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