HAT2020R
Silicon N-Channel Power MOS FET
Preliminary
November 1996
Application
High speed power switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
SOP–8
1234
5
6
7
8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
SSS
DDD
4
123
56 7 8
HAT2020R
Ordering Information
Hitachi Code FP-8DA
EIAJ Code —
JEDEC Code MS-012AA
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID7A
Drain peak current ID(pulse)*128 A
Body to drain diode reverse drain current IDR 7A
Channel dissipation Pch*2 2W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using surface mounted on FR4 board
HAT2020R
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS ——10µAV
DS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance RDS(on) — (0.026) 0.03 ½ ID = 4 A
VGS = 10 V*1
— (0.04) 0.05 ½ ID = 4 A
VGS = 4 V*1
Forward transfer admittance |yfs| (6) (10) — S ID = 4 A
VDS = 10 V*1
Input capacitance Ciss — (570) — pF VDS = 10 V
Output capacitance Coss — (370) — pF VGS = 0
Reverse transfer capacitance Crss — (140) — pF f = 1 MHz
Turn-on delay time td(on) — (20) — ns VGS = 4 V, ID = 4 A
Rise time tr— (160) — ns VDD = 10 V
Turn-off delay time td(off) — (65) — ns
Fall time tf— (60) — ns
Body to drain diode forward
voltage VDF — (0.8) — V IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time trr — (60) — ns IF = 7 A, VGS = 0
diF/dt = 20 A/µs
Note 1. Pulse Test
HAT2020R
4.0
3.0
2.0
1.0
0
Channel Dissipation Pch* (W)
50 100 150 200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
* When using surface mounted on FR4 board
HAT2020R
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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