J210 – J212 / SSTJ210 – SSTJ212
LLC
ABSOLUTE M AXIM UM R A T INGS (TA = 2 5oC unless otherwise not ed)
Param et er/Tes t Condi tion Symbol Limit Unit
Gate- Dr ain Voltage VGD -25 V
Gate-Source Voltage VGS -25 V
Gate Current IG10 mA
Power Dissipat ion PD360 mW
Power Der at ing 3.27 mW/ oC
Oper at ing J unct ion Temper at ur e TJ- 55 to 13 5 oC
Stor age Tem pera ture T stg -55 to 150 oC
Lead Tempe ra tu re (1/1 6 " fr om case for 10 seco nds) TL300 oC
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unless other wise no ted)
SYMBOL CHARACTERISTCS TYP1210 211 212 UNIT TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
STATIC
V(BR)GSS Gate-Source Breakdown Vol tage -35 -25 -25 -25 VIG = -1µA, VDS = 0V
VGS(OFF) Gate-Source Cut off Voltage -1 -3 -2.5 -4.5 -4 -6 VDS = 15V, ID = 1nA
IDSS Saturation Drain Current 22157201540 mAV
DS = 15V, VGS = 0V
IGSS Gate Reverse Current -1 -100 -100 -100 pA VGS = -15V, VDS = 0V
-0.5 nA TA = 125oC
IGGate Operating Current -1 pA VDG = 10V, ID = 1mA
ID(OFF) Drain Cutoff Current 1 pA VDS = 10V, VGS = -8V
VGS(F) Gate-Source Forward Voltage 0.7 V IG = 1mA, VDS = 0V
DYNAMIC
gfs Common-Source Forward
Transconductance 412612712 mSVDS = 15V, VGS = 0V
f = 1kHz
gos Common-Source Output
Conductance 150 200 200 µS
Ciss Common-Source Input Capacitance 4 pF VDS = 15V, VGS = 0V
f = 1MHz
Crss Common-Source Reverse
Transfer Capacitance 1.5
enEquivalent Input Noise Voltage 5 nV/ Hz VDS = 15V, VGS = 0V
f = 1kHz
NOTES: 1. For de sign aid o nly, not subject to pro duct ion testing.
2. Pulse test; PW = 30 0µs, duty cycl e ≤ 3%.
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