MJ11021 - ON Semiconductor

September, 2008 − Rev. 3

1Publication Order Number:

MJ11021/D

MJ11021(PNP)

MJ11022 (NPN)

Complementary Darlington

Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed

for use as general purpose amplifiers, low frequency switching and

motor control applications.

Features

•High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types)

•Collector−Emitter Sustaining Voltage

VCEO(sus) = 250 Vdc (Min) − MJ11022, 21

•Low Collector−Emitter Saturation

VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ IC = 10 A

•100% SOA Tested @ VCE = 44 V

IC = 4.0 A

t = 250 ms

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 250 Vdc

Collector−Base Voltage VCBO 250 Vdc

Emitter−Base Voltage VEBO 50 Vdc

Collector Current − Continuous

− Peak (Note 1)

IC15

Adc

Base Current IB0.5 Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

PD175

1.16

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg – 65 to +175

− 65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 0.86 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204 (TO−3)

CASE 1−07

STYLE 1

15 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

250 VOLTS, 175 WATTS

http://onsemi.com

Device Package Shipping

ORDERING INFORMATION

MJ11021 TO−3 100 Units/Tray

MJ11022 TO−3 100 Units/Tray

MJ11021G TO−3

(Pb−Free)

100 Units/Tray

MJ11022G TO−3

(Pb−Free)

100 Units/Tray

MARKING

DIAGRAM

MJ1102x = Device Code

x = 1 or 2

G= Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

MJ1102xG

AYYWW

MEX

COLLECTOR

CASE

BASE

EMITTER 2

COLLECTOR

CASE

BASE

EMITTER 2

NPN PNP

MJ11022 MJ11021

MJ11021(PNP) MJ11022 (NPN)

http://onsemi.com

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

50 75 100 125 200

200

PD, POWER DISSIPATION (WATTS)

100

0 150 17525

Figure 2. Switching Times Test Circuit

APPROX

+12 V

APPROX

-8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC

100 V

RCSCOPE

TUT

+4.0 V

≈10 K ≈8.0

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse diode and voltage polarities.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0) MJ11021, MJ11022

VCEO(sus) 250 −

Vdc

Collector Cutoff Current

(VCE = 125, IB = 0) MJ11021, MJ11022

ICEO

−1.0

mAdc

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)

ICEV

−

0.5

5.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −2.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

hFE 400

100

15,000

−

Collector−Emitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)

(IC = 15 Adc, IB = 150 mA)

VCE(sat)

−

2.0

3.4

Vdc

Base−Emitter On Voltage

IC = 10 A, VCE = 5.0 Vdc)

VBE(on) −2.8 Vdc

Base−Emitter Saturation Voltage

(IC = 15 Adc, IB = 150 mA)

VBE(sat) −3.8 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

[hfe] 3.0 −Mhz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJ11022

MJ11021

Cob

−

400

600

Small−Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe 75 − −

SWITCHING CHARACTERISTICS

Typical

Characteristic Symbol NPN PNP Unit

Delay Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2)

td150 75 ns

Rise Time tr1.2 0.5 ms

Storage Time ts4.4 2.7 ms

Fall Time tf10.0 2.5 ms

1. Pulsed Test: Pulse Width = 300 ms, Duty Cycle v 2%.

MJ11021(PNP) MJ11022 (NPN)

http://onsemi.com

t, TIME (ms)

1.0

0.01

0.1

r(t), EFFECTIVE TRANSIENT THERMAL

1.0 1.0 100

RqJC(t) = r(t) RqJC

RqJC(t) = 0.86°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

SINGLE PULSE

RESISTANCE (NORMALIZED)

100

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 3. Thermal Response

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.03 0.05 0.2 0.3 0.5 2.0 3.0 5.0 200 300 50010 20 30 50

0.1

0.02

0.01

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0 10 20 2003.0 50 100

Figure 4. Maximum Rated Forward Bias Safe

Operating Area (FBSOA)

0.3

0.2

0.5

7.0 30 70 150

0.1 ms

3.0

2.0

1.0

5.0

IC, COLLECTOR CURRENT (AMPS)

TJ = 175°C

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITATION @ TC = 25°C

SINGLE PULSE

0.5ms

1.0ms

5.0ms

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 175_C, TC is

variable dependIng on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 175_C. TJ(pk) may be calculated from the data in

Figure 3. At high case temperatures thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

20 100 140 2600 180 22060

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum RBSOA, Reverse Bias Safe

Operating Area

IC, COLLECTOR CURRENT (AMPS)

L = 200 mH

IC/IB1 ≥ 50

TC = 25°C

VBE(off) 0 - 5.0 V

RBE = 47 W

DUTY CYLE = 10%

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be hold to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current conditions during

reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 5 gives ROSOA characteristics.

MJ11021(PNP) MJ11022 (NPN)

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

COLLECTOR CURRENT (AMPS)

4.0

0.1

3.0

2.5

1.5

3.5

2.0

1.0

0.5 0.7 1.0 2.0 3.0 5.0 107.0 503020 70

4.0

3.0

2.5

1.5

3.5

2.0

1.0

0.5

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)

hFE, DC CURRENT GAIN

Figure 6. DC Current Gain

Figure 7. Collector Saturation Region

IB, BASE CURRENT (mA)

7000

5000

10,000

0.3 0.5 1.0 200.2

3000

2000

1000

700

500

300

200

0.7

COLLECTOR CURRENT (AMPS)

Figure 8. “On” Voltages

VBE(sat) @ IC/IB = 100

VCE = 5.0 Vdc

100 3.0 5.0 107.0 152.0

20,000

10,000

30,000

2000

1000

700

500

300

TJ = 25°C

TJ = 150°C

TJ = - 55°C

7000

5000

3000

VOLTAGE (VOLTS)

4.0

0.5

IB, BASE CURRENT (mA)

500

3.0

2.5

1.5

3.5

2.0

1.0

0.5 300200

0.7 1.0 2.0 3.0 5.0 107.0 503020 10070

IC = 5.0 A

TJ = 25°C

IC = 15 A

0.2 0.3 0.5

TJ = 25°C

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

VOLTAGE (VOLTS)

PNP NPN

0.3 0.5 1.0 200.2 0.7 3.0 5.0 107.0 152.0

VCE = 5.0 Vdc

TJ = 150°C

TJ = 25°C

TJ = - 55°C

IC = 10 A

4.0

0.5 500

3.0

2.5

1.5

3.5

2.0

1.0

0.5 300200

0.7 1.0 2.0 3.0 5.0 107.0 503020 10070

TJ = 25°C

IC = 5.0 A

IC = 15 A

IC = 10 A

0.1 0.7 1.0 2.0 3.0 5.0 107.0 5030200.2 0.3 0.5

TJ = 25°C

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

MJ11021(PNP) MJ11022 (NPN)

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T−SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

TO−204 (TO−3)

CASE 1−07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MJ11021/D

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