Freescale Semiconductor Technical Data Document Number: AFT18H357--24S Rev. 0, 3/2014 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz. AFT18H357--24SR6 1800 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 1805 MHz 17.3 50.3 7.8 --34.6 1840 MHz 17.5 49.7 7.9 --37.4 1880 MHz 17.4 50.3 7.8 --37.6 1805-1995 MHz, 63 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR 1900 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.4 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 1930 MHz 17.0 49.1 7.7 --34.6 1960 MHz 17.1 48.9 7.6 --37.4 1995 MHz 17.0 49.1 7.4 --37.6 Features Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. NI--1230S--4L2L 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT18H357--24SR6 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C Operating Junction Temperature Range (1,2) TJ --40 to +225 C CW 378 3.24 W W/C CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 79C, 63 W W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, 1840 MHz RJC 0.43 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) IV Charge Device Model (per JESD22--C101) B Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 140 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 800 mAdc, Measured in Functional Test) VGSA(Q) 1.4 1.8 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.4 Adc) VDS(on) 0.1 0.15 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A (4) On Characteristics -- Side B (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) AFT18H357--24SR6 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1,2) Functional Tests (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 V, Pout = 63 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 16.6 17.3 19.6 dB Drain Efficiency D 47.4 50.3 -- % PAR 7.4 7.8 -- dB ACPR -- --34.6 --32.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 800 mA, f = 1840 MHz, 10 sec Pulse Width, 10% Duty Cycle VSWR 10:1 at 32 Vdc, 360 W Pulse Output Power (3 dB Input Overdrive from 210 W Pulse Rated Power) No Device Degradation Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, 1805-1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 220 -- W Pout @ 3 dB Compression Point (3) P3dB -- 320 -- W -- --15 -- VBWres -- 110 -- MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg. GF -- 0.2 -- dB Gain Variation over Temperature (--30C to +85C) G -- 0.008 -- dB/C P1dB -- 0.009 -- dB/C AM/PM (Maximum value measured at the P3dB compression point across the 1805--1880 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30C to +85C) (4) 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 3 C15 VGGA -C11 C1 C9 C3 R1 C7 P R2 C6 C19 CUT OUT AREA C C17 C18 Z1 C13 C21 C5 R3 VDDA C8 C20 C22 AFT18H357--24S Rev. 6 C12 C10 C2 C14 C4 D55983 -VGGB VDDB C16 Figure 2. AFT18H357--24SR6 Test Circuit Component Layout -- 1805-1880 MHz Table 5. AFT18H357--24SR6 Test Circuit Component Designations and Values -- 1805-1880 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 20 pF Chip Capacitors ATC600F200JT250XT ATC C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC C7, C8 8.2 pF Chip Capacitors ATC600F8R2JT250XT ATC C9, C10, C11, C12, C13, C14 10 F Chip Capacitors C5750X7S2A106K230KB TDK C15, C16 220 F, 63 V Electrolytic Capacitors SK063M0220B5S-1015 YAGEO C17 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC C18 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC C19 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC C20 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC C21, C22 2.2 F Chip Capacitors C3225X7R2A225KT TDK R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 10 W Chip Resistor CW12010T0050GBK ATC Z1 1700--2000 MHz Band 90, 5 dB Directional Coupler X3C19P1--05S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D55983 MTL AFT18H357--24SR6 4 RF Device Data Freescale Semiconductor, Inc. D 17.6 17.5 52 51 50 49 Gps 17.4 17.3 PARC 17.2 17.1 --2 --38 IRL 1800 --32 --36 17 1780 --1.8 --34 ACPR 16.9 1760 --30 1820 1840 1860 1880 --40 1920 1900 --2.2 --2.4 --2.6 PARC (dB) Gps, POWER GAIN (dB) 17.7 53 VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 800 mA VGSB = 0.7 Vdc, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 17.8 ACPR (dBc) 17.9 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -- 1805-1880 MHz --2.8 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. 0 VDD = 28 Vdc, Pout = 32 W (PEP), IDQA = 800 mA, VGSB = 0.7 Vdc Two--Tone Measurements, (f1 + f2)/2 = Center --15 Frequency of 1840 MHz IM3--U --30 IM3--L IM7--L --45 --60 --75 IM5--L IM7--U 1 IM5--U 100 10 300 TWO--TONE SPACING (MHz) 17.8 0 17.6 17.4 17.2 17 16.8 VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc f = 1840 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF D --1 --2 dB = 63 W ACPR PARC --3 dB = 85 W Gps --5 20 35 55 --33 45 --3 --4 --31 50 --1 dB = 40 W --2 60 50 65 80 95 40 --35 --37 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 18 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing --39 35 --41 30 --43 110 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS -- 1805-1880 MHz Gps, POWER GAIN (dB) 20 18 Gps 16 1840 MHz 30 1880 MHz 14 1805 MHz 12 D 10 1805 MHz 1840 MHz 1880 MHz 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1 10 20 0 400 100 --10 --20 --30 --40 --50 ACPR (dBc) 60 1880 MHz VDD = 28 Vdc, IDQA = 800 mA VGSB = 0.7 Vdc, Single--Carrier 50 1805 MHz W--CDMA, 3.84 MHz Channel Bandwidth 1840 MHz ACPR 40 D, DRAIN EFFICIENCY (%) 22 --60 --70 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 18 Gain 17 GAIN (dB) 16 15 14 VDD = 28 Vdc Pin = 0 dBm IDQA = 800 mA VGSB = 0.7 Vdc 13 12 1620 1680 1740 1800 1860 1920 1980 2040 2100 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT18H357--24SR6 6 RF Device Data Freescale Semiconductor, Inc. Table 6. Carrier Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, IDQA = 789 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.22 - j3.38 1.25 + j3.43 1840 1.37 - j3.43 1.38 + j3.55 1880 1.67 - j3.79 1.73 + j3.78 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.64 - j4.15 19.7 51.8 152 57.3 -10 1.62 - j4.36 19.6 51.8 152 57.2 -10 1.58 - j4.51 19.5 51.8 151 56.7 -11 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.22 - j3.38 1.15 + j3.61 1.57 - j4.42 17.4 52.6 183 58.2 -16 1840 1.37 - j3.43 1.29 + j3.76 1.54 - j4.59 17.3 52.6 182 57.8 -16 1880 1.67 - j3.79 1.66 + j4.07 1.57 - j4.80 17.3 52.6 181 57.2 -16 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 7. Carrier Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 789 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 3.59 - j2.59 22.4 49.7 93 69.0 -18 1.29 + j3.65 3.16 - j2.97 22.1 50.0 101 68.2 -17 1.65 + j3.89 3.06 - j3.13 22.1 50.0 100 67.5 -17 f (MHz) Zsource () Zin () 1805 1.22 - j3.38 1.17 + j3.55 1840 1.37 - j3.43 1880 1.67 - j3.79 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1805 1.22 - j3.38 1.07 + j3.65 1840 1.37 - j3.43 1.19 + j3.80 1880 1.67 - j3.79 1.55 + j4.11 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 3.22 - j3.06 20.0 50.9 122 69.5 -24 3.07 - j3.01 20.1 50.7 117 68.5 -24 3.00 - j3.18 20.0 50.7 117 67.4 -24 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 7 Table 8. Peaking Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 0.831 - j3.07 0.799 + j3.11 1840 1.13 - j3.28 0.919 + j3.29 1880 1.40 - j3.52 1.27 + j3.61 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.82 - j4.08 16.2 54.1 254 58.0 -30 1.90 - j4.32 16.2 54.1 259 58.3 -28 2.01 - j4.58 16.2 54.1 257 57.8 -29 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 0.831 - j3.07 0.787 + j3.23 1.84 - j4.35 14.0 54.7 297 58.6 -37 1840 1.13 - j3.28 0.938 + j3.44 1.98 - j4.65 14.0 54.8 301 58.8 -35 1880 1.40 - j3.52 1.34 + j3.82 2.12 - j4.91 14.0 54.8 299 58.0 -36 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 9. Peaking Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 3.94 - j2.16 17.7 52.2 165 71.2 -37 0.768 + j3.24 3.51 - j1.93 17.6 52.1 162 71.2 -36 1.03 + j3.55 3.00 - j1.81 17.6 51.9 155 71.2 -38 f (MHz) Zsource () Zin () 1805 0.831 - j3.07 0.685 + j3.07 1840 1.13 - j3.28 1880 1.40 - j3.52 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1805 0.831 - j3.07 0.725 + j3.21 1840 1.13 - j3.28 0.837 + j3.41 1880 1.40 - j3.52 1.19 + j3.79 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 3.80 - j2.97 15.5 53.3 212 70.8 -45 3.62 - j2.72 15.5 53.2 208 70.7 -44 3.32 - j2.95 15.5 53.4 220 70.5 -44 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H357--24SR6 8 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS -- 1840 MHz --1 --1 48 --2 48.5 --3 E 49 49.5 --4 P 51.5 50.5 51 IMAGINARY () IMAGINARY () --2 50 --5 1 1.5 2 3 2.5 3.5 4 REAL () 4.5 5 66 P --5 --7 6 5.5 56 52 1 1.5 2 2.5 3 58 64 62 60 54 3.5 4 REAL () 4.5 5 5.5 6 Figure 9. P1dB Load Pull Efficiency Contours (%) --1 --1 --24 23 --2 IMAGINARY () E 21.5 --4 P 21 --5 19.5 --3 --14 --4 P --12 --5 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 6 5.5 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: --7 --16 E --10 --6 20 --20 --18 20.5 --6 --22 --2 22.5 22 --3 --7 68 --4 Figure 8. P1dB Load Pull Output Power Contours (dBm) IMAGINARY () E --6 --6 --7 --3 --8 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 9 P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS -- 1840 MHz --1 --1 48.5 --2 49 --3 E 49.5 50 --4 P 52.5 --5 51 52 --6 IMAGINARY () IMAGINARY () --2 50.5 51.5 68 --3 E 66 --4 64 P 60 58 --6 1 1.5 2 3 2.5 3.5 4 REAL () 4.5 5 --7 6 5.5 1.5 2 2.5 3 3.5 4 REAL () --30 --2 --2 20 P 19.5 18.5 17 --6 --7 IMAGINARY () IMAGINARY () E --5 17.5 1 1.5 2 19 3 3.5 4 REAL () --3 6 4.5 5 6 5.5 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: --22 --20 --4 --18 P --5 --7 --28 --24 E --16 --14 --6 18 2.5 5.5 --26 20.5 --4 5 --1 21 --3 4.5 Figure 13. P3dB Load Pull Efficiency Contours (%) Figure 12. P3dB Load Pull Output Power Contours (dBm) --1 1 56 54 52 --7 62 --5 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 10 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS -- 1840 MHz 0 0 50.5 50 51 --1 --1 E --2 --3 IMAGINARY () IMAGINARY () 51.5 52 53 52.5 --4 P 54 E --2 70 --3 68 64 P 53.5 --5 62 --5 56 53 --6 2 1 3 4 REAL () 5 --6 7 6 1 2 60 58 3 4 REAL () 0 0 --1 --1 --2 IMAGINARY () IMAGINARY () --42 E 17.5 --3 17 --4 15 --5 14 1 --2 2 7 --38 --40 --34 --3 --32 --30 --4 --5 16.5 16 6 --36 P 15.5 5 E P 14.5 56 Figure 17. P1dB Load Pull Efficiency Contours (%) Figure 16. P1dB Load Pull Output Power Contours (dBm) --6 66 --4 --28 --6 3 4 REAL () 5 6 7 Figure 18. P1dB Load Pull Gain Contours (dB) NOTE: 1 2 3 4 REAL () 5 6 7 Figure 19. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 11 P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS -- 1840 MHz 0 0 51 62 51.5 --1 --1 52.5 E --3 53 --4 54 P --5 2 1 3 4 REAL () 5 68 --4 --6 7 6 --1 --1 --2 --2 --3 15 --4 13 --5 --6 IMAGINARY () 0 E 12 1 12.5 P 13.5 14.5 64 54 56 2 1 60 58 3 62 58 4 REAL () --48 E --3 5 6 7 --46 --44 --42 --40 --4 --38 P --5 14 2 66 P Figure 21. P3dB Load Pull Efficiency Contours (%) 0 15.5 70 E --3 --5 Figure 20. P3dB Load Pull Output Power Contours (dBm) IMAGINARY () --2 53.5 54.5 54 --6 IMAGINARY () IMAGINARY () 52 --2 --36 --32 --34 --6 3 4 REAL () 5 6 7 Figure 22. P3dB Load Pull Gain Contours (dB) NOTE: 1 2 3 4 REAL () 5 6 7 Figure 23. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 12 RF Device Data Freescale Semiconductor, Inc. ALTERNATE CHARACTERIZATION -- 1930-1995 MHz VGGA -C11 C1 C9 C3 C7 C5 C6 P C17 AFT18H357--24S Rev. 6 C18 R2 CUT OUT AREA C R3 C15 C13 R1 Z1 VDDA C8 C12 C19 C10 C2 C14 C4 D55813 C16 VDDB -VGGB Figure 24. AFT18H357--24SR6 Test Circuit Component Layout -- 1930--1995 MHz Table 10. AFT18H357--24SR6 Test Circuit Component Designations and Values -- 1930--1995 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 15 pF Chip Capacitors ATC600F150JT250XT ATC C5, C6, C8 8.2 pF Chip Capacitors ATC600F8R2JT250XT ATC C7 3.9 pF Chip Capacitor ATC600F3R9JT250XT ATC C9, C10, C11, C12, C13, C14 10 F Chip Capacitors C5750X7SA106K230KB TDK C15, C16 220 F, 63 V Electrolytic Capacitors SK063M0220B5S-1015 YAGEO C17, C19 0.2 pF Chip Capacitors ATC600F0R2BT250XT ATC C18 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 10 W Chip Resistor CW12010T0050GBK ATC Z1 1700--2000 MHz Band 90, 5 dB Directional Coupler X3C19P1--05S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D55813 MTL AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 13 51 VDD = 28 Vdc, Pout = 63 W (Avg.) IDQA = 800 mA VGSB = 0.4 Vdc, Single--Carrier W--CDMA, 3.84 MHz 50.5 Channel Bandwidth, Input Signal PAR = 9.9 dB 50 @ 0.01% Probability on CCDF 49.5 D 49 Gps, POWER GAIN (dB) 17.3 17.2 17.1 17 Gps 16.9 PARC 16.8 16.7 16.5 1880 1900 1920 1940 1960 --2.1 --32 --2.2 --34 --36 ACPR 16.6 --30 --38 1980 2000 2020 ACPR (dBc) 17.4 --2.3 --2.4 --2.5 --40 2040 PARC (dB) 17.5 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -- 1930-1995 MHz --2.6 f, FREQUENCY (MHz) Figure 25. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. Gps, POWER GAIN (dB) 20 1995 MHz 1960 MHz 1930 MHz 18 --10 50 --20 ACPR 40 1960 MHz 16 14 60 1995 MHz 1930 MHz D 10 20 1930 MHz 1960 MHz 12 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01%= Probability on CCDF 1 30 1995 MHz 10 10 Gps 100 0 400 --30 --40 --50 ACPR (dBc) VDD = 28 Vdc, IDQA = 800 mA VGSB = 0.4 Vdc Single--Carrier W--CDMA D, DRAIN EFFICIENCY (%) 22 --60 --70 Pout, OUTPUT POWER (WATTS) AVG. Figure 26. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 18 Gain GAIN (dB) 16 14 12 VDD = 28 Vdc Pin = 0 dBm IDQA = 800 mA VGSB = 0.4 Vdc 10 8 1660 1750 1840 1930 2020 2110 2200 2290 f, FREQUENCY (MHz) Figure 27. Broadband Frequency Response AFT18H357--24SR6 14 RF Device Data Freescale Semiconductor, Inc. Table 11. Carrier Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, IDQA = 790 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1930 2.31 - j4.08 2.36 + j4.20 1960 2.73 - j4.53 2.83 + j4.49 1995 3.52 - j4.43 3.64 + j4.64 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.63 - j4.80 19.5 51.7 149 55.4 -11 1.63 - j4.87 19.4 51.7 149 55.2 -11 1.72 - j5.06 19.5 51.6 146 54.0 -11 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1930 2.31 - j4.08 2.34 + j4.60 1.62 - j5.05 17.2 52.5 178 56.1 -16 1960 2.73 - j4.53 2.89 + j4.97 1.66 - j5.16 17.2 52.5 177 55.7 -17 1995 3.52 - j4.43 3.88 + j5.20 1.76 - j5.34 17.2 52.4 173 54.7 -16 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 12. Carrier Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 790 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.94 - j3.26 22.0 49.9 98 65.8 -16 2.72 + j4.60 2.87 - j3.27 22.0 49.8 95 65.4 -17 3.52 + j4.76 2.89 - j3.42 22.1 49.7 94 63.6 -15 f (MHz) Zsource () Zin () 1930 2.31 - j4.08 2.25 + j4.31 1960 2.73 - j4.53 1995 3.52 - j4.43 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1930 2.31 - j4.08 2.15 + j4.68 1960 2.73 - j4.53 2.68 + j5.07 1995 3.52 - j4.43 3.62 + j5.39 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 2.61 - j3.08 20.0 50.5 112 66.1 -26 2.58 - j3.15 20.0 50.5 111 65.7 -26 2.37 - j3.33 20.0 50.6 114 64.8 -25 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 15 Table 13. Peaking Side Load Pull Performance -- Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1930 2.31 - j4.08 2.00 + j4.23 1960 3.28 - j4.32 2.69 + j4.66 1995 4.55 - j4.25 4.00 + j4.92 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 2.28 - j4.89 16.1 54.1 256 57.5 -30 2.54 - j5.11 16.1 54.1 255 57.7 -30 2.87 - j5.40 16.1 54.0 250 56.3 -30 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1930 2.31 - j4.08 2.23 + j4.52 2.54 - j5.29 13.9 54.7 297 57.6 -36 1960 3.28 - j4.32 3.08 + j4.97 2.79 - j5.46 13.9 54.7 296 57.5 -37 1995 4.55 - j4.25 4.73 + j5.11 3.20 - j5.65 14.0 54.6 291 57.0 -37 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 14. Peaking Side Load Pull Performance -- Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.85 - j2.12 17.5 52.1 162 70.7 -37 2.17 + j4.63 2.67 - j1.93 17.3 51.7 149 70.6 -39 3.29 + j5.06 2.76 - j2.21 17.4 51.9 157 69.8 -37 f (MHz) Zsource () Zin () 1930 2.31 - j4.08 1.66 + j4.17 1960 3.28 - j4.32 1995 4.55 - j4.25 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1930 2.31 - j4.08 1.95 + j4.48 1960 3.28 - j4.32 2.69 + j4.98 1995 4.55 - j4.25 4.09 + j5.32 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 3.18 - j2.71 15.3 53.2 208 70.0 -45 3.13 - j2.72 15.3 53.2 207 69.8 -45 2.90 - j2.56 15.4 52.8 191 69.0 -47 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H357--24SR6 16 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS -- 1960 MHz --1 --1 47.5 48.5 --3 E 49.5 --2 48 IMAGINARY () IMAGINARY () --2 49 --4 --5 50.5 51 P 50 --3 E 62 64 --4 60 56 P --5 54 52 51.5 --6 --6 --7 50 1 1.5 2 3 2.5 3.5 4 REAL () 4.5 5 --7 6 5.5 --1 1 1.5 2 3 2.5 3.5 4 REAL () 4.5 5 5.5 6 --1 23 --2 E 22 --4 21.5 21 P --5 19 1 1.5 2 E --14 --4 P --5 --12 --6 19.5 2.5 --18 --16 --3 20.5 20 --6 --20 --24 22.5 --3 --22 --2 IMAGINARY () IMAGINARY () 50 Figure 29. P1dB Load Pull Efficiency Contours (%) Figure 28. P1dB Load Pull Output Power Contours (dBm) --7 58 3 3.5 4 REAL () 4.5 5 6 5.5 Figure 30. P1dB Load Pull Gain Contours (dB) NOTE: --7 --10 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 31. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 17 P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS -- 1960 MHz --1 --1 48.5 49.5 --3 E --2 49 IMAGINARY () IMAGINARY () --2 50 --4 52 --5 51 P 50.5 51 60 --5 1 1.5 2 3 2.5 3.5 4 REAL () 4.5 5 --7 6 5.5 58 56 P 54 52 50 1 1.5 2 3 2.5 3.5 4 REAL () 4.5 5 5.5 6 Figure 33. P3dB Load Pull Efficiency Contours (%) --1 --1 21 --2 --2 20.5 --3 E IMAGINARY () IMAGINARY () 62 64 --4 --6 Figure 32. P3dB Load Pull Output Power Contours (dBm) 20 --4 19.5 --5 19 P 17 1 1.5 2 E 3 3.5 4 REAL () 4.5 5 6 5.5 Figure 34. P3dB Load Pull Gain Contours (dB) NOTE: --24 --22 --4 --7 --20 --18 --5 P --16 --6 17.5 2.5 --26 --28 --30 --3 18.5 18 --6 --7 E 51.5 --6 --7 --3 --14 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 35. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 18 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS -- 1960 MHz 0 --1 0 51 --1 51.5 EE --2 52 --3 53 --4 --5 P --6 52 3 4 REAL () 5 P 1 3 2 --3 17 --4 16.5 --5 P 16 --6 13.5 14 14.5 3 5 6 7 --40 --36 E --34 --3 --32 --4 --30 --5 P --28 --7 15 4 REAL () 4 REAL () --6 15.5 --7 2 56 --38 --42 --2 E 1 58 54 --1 IMAGINARY () IMAGINARY () 60 --5 0 16 --2 62 Figure 37. P1dB Load Pull Efficiency Contours (%) --1 --8 68 --4 --8 7 6 Figure 36. P1dB Load Pull Output Power Contours (dBm) 0 64 66 --7 53 2 1 70 --3 --6 52.5 --7 --8 53.5 54 E --2 52.5 IMAGINARY () IMAGINARY () 50.5 50 5 6 7 Figure 38. P1dB Load Pull Gain Contours (dB) NOTE: --8 1 2 3 4 REAL () 5 6 7 Figure 39. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 19 P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS -- 1960 MHz --1 --2 52 52.5 E --3 --2 53 53.5 --4 IMAGINARY () IMAGINARY () --1 51 51.5 50.5 54 --5 P --6 --8 52.5 1 1.5 68 --4 66 64 --5 54 62 60 58 P --6 54.5 --7 E --3 56 --7 53 53.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 --8 6 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 41. P3dB Load Pull Efficiency Contours (%) Figure 40. P3dB Load Pull Output Power Contours (dBm) 52.5 --1 --1 --2 --2 IMAGINARY () 15 --4 14.5 --5 P 14 --6 11.5 1 1.5 2 12.5 12 2.5 3 --48 --44 --42 --40 E --3 --38 --4 --5 --36 P --34 --7 13 3.5 4 REAL () --46 --6 13.5 --7 --8 IMAGINARY () E --3 --50 4.5 5 5.5 6 Figure 42. P3dB Load Pull Gain Contours (dB) NOTE: --8 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 43. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H357--24SR6 20 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 21 AFT18H357--24SR6 22 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Mar. 2014 Description Initial Release of Data Sheet AFT18H357--24SR6 RF Device Data Freescale Semiconductor, Inc. 23 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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