72314HK TC-00003135/42414TKIM No.A2329-1/6
Semiconductor Components Industries, LLC, 2014
July, 2014
http://onsemi.com
EFC6612R
Features
2.5V drive Common-drain type
Protection diode in 2KV ESD HBM
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Conditions Value Unit
Source to Source Voltage VSSS 20 V
Gate to Source Voltage VGSS 12 V
Source Current (DC) IS 23 A
Source Current (Pulse) ISP PW100s, duty cycle1% 100 A
Total Dissipation PT When mounted on ceramic substrate (5000mm 20.8mm) 2.5 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient RJA 50 C/W
When mounte d on ce ramic substrate (5000 m m
2
0.8mm)
Electrical Characteristics at Ta 25C
Parameter Symbol Conditions Value Unit
min typ max
Source to Source Breakdown Voltage V(BR)SSS I
S=1mA, VGS=0V Test Cir cuit 1 20 V
Zero-Gate Voltage Source Current ISSS V
SS=20V, VGS=0V Test Cir cuit 1 1 A
Gate to Source Leakage Current IGSS V
GS=±8V, VSS=0V Test Ci rcuit 2 1A
Gate Threshold Voltage VGS(th) VSS=10V, IS=1mA Test Circuit 3 0.5 1.3 V
Forward Transconductance gFS VSS=10V, IS=3A Test Circuit 4 4.7 S
Continued on next page.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Orderin
g
numbe
r
: ENA2329A
Power MOSFET
20V, 5.1mΩ, 23A, Dual N-Channel
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
EFC6612R
No.A2329-2/6
Continued from preceding page.
Parameter Symbol Conditions Value Unit
min typ max
Static Source to Source On-State
Resistance
RSS(on)1 IS=4.5A, VGS=4.5V Test Circuit 5 3.3 4.2 5.1 m
RSS(on)2 IS=4.5A, VGS=4.0V Test Circuit 5 3.4 4.3 5.2 m
RSS(on)3 IS=4.5A, VGS=3.8V Test Circuit 5 3.5 4.4 5.3 m
RSS(on)4 IS=4.5A, VGS=3.1V Test Circuit 5 3.9 4.9 6.4 m
RSS(on)5 IS=4.5A, VGS=2.5V Test Circuit 5 4.4 5.6 7.9 m
Turn-ON Delay Time td(on)
VSS=10V, VGS=4.5V, IS=4.5A Test Circuit 6
30 ns
Rise Time tr 640 ns
Turn-OFF Delay Time td(off) 11.8 s
Fall Time t
f
92 s
Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=23A Test Circuit 7 27 nC
Forward Source to Source Voltage VF(S-S) I
S=4.5A, VGS=0V Test Circuit 8 0.76 1.2 V
Ordering & Package Information
Device Package
Shipping note
EFC6612R-TF EFCP 5,000
pcs. / reel
Pb-Free
and
Halogen Free
Packing Type: TF Marking Electrical Connection
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
EFC6612R
No.A2329-3/6
Test circuits are example of measuring FET1 side
When FET2 is measured, the po s iti on of FET1 and FET2 is switched.
EFC6612R
No.A2329-4/6
EFC6612R
No.A2329-5/6
EFC6612R
PS No.A2329-6/6
Package Dimensions
EFC6612R-TF
CSP6, 1.77×3.54 / EFCP3517-6DGH-020
CASE 568AL
ISSUE O
unit : mm
1: Source1
2: Gate1
3: Source1
4: Source2
5: Gate2
6: Source2
Note on usage : Since the EFC6612R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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