PHOTODIODE Si APD S2381 to S2385, S5139, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Optical fiber communications l Spatial light transmission l Rangefinder General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material *1 S2381 S2382 S5139 S2383 S2383-10 *3 S3884 S2384 S2385 Package /K TO-18 /L /K /K /K /K TO-5 TO-8 Active area *2 size Effective active area (mm) 0.2 (mm2) 0.03 0.5 0.19 1.0 0.78 1.5 3.0 5.0 1.77 7.0 19.6 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (C) (C) -20 to +85 -55 to +125 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Excess Photo Quantum Breakdown Spectral Peak *4 Cut-off *4 Dark Temp. Gain sensitivity efficiency voltage Terminal*4 Noise 4 response sensitivity coefficient current * frequency M S QE VBR capacitance figure *4 fc range wavelength ID of ID=100 A x M=1 M=1 Ct Type No. =800 nm VBR RL=50 p =800 nm =800 nm =800 nm (nm) (nm) (A/W) (%) Typ. Max. (V) (V) (V/C) Typ. Max. (nA) (nA) 0.05 0.5 S2381 S2382 0.1 S5139 S2383 0.2 800 0.5 75 150 200 0.65 400 to 1000 S2383-10 *3 S3884 0.5 S2384 1 S2385 3 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: Active area in which a typical gain can be obtained *3: Variant type of S2383, with light-shield provided on the periphery of the element *4: Measured with the gain listed in this specification table (MHz) 1000 (pF) 1.5 1 900 3 2 600 6 5 10 30 400 120 40 10 40 95 0.3 100 60 40 Note) Three ranks of breakdown voltage are available for S2381, S2382, S2383 and S3884. These are designated by a suffix number as follows. -01: 80 to 120 V -02: 120 to 160 V -03: 160 to 200 V Si APD Spectral response S2381 to S2385, S5139, S3884 Quantum efficiency vs. wavelength (Typ. Ta=25 C, =800 nm) 50 (Typ. Ta=25 C) 100 40 QUANTUM EFFICIENCY (%) PHOTO SENSITIVITY (A/W) M=100 30 M=50 20 10 0 200 400 600 60 40 20 0 200 1000 800 80 400 WAVELENGTH (nm) 600 800 1000 WAVELENGTH (nm) KAPDB0020EB Dark current vs. reverse voltage KAPDB0021EA Gain vs. reverse voltage (Typ. Ta=25 C) 10 nA (Typ. =800 nm) 10000 20 C S2384 0 C 1000 S3884 -20 C S2383/-10 GAIN DARK CURRENT 1 nA 100 pA 100 40 C S2382, S5139 S2381 10 pA 1 pA 0 50 10 100 150 60 C 1 80 200 REVERSE VOLTAGE (V) 100 120 140 160 180 REVERSE VOLTAGE (V) KAPDB0016EB Terminal capacitance vs. reverse voltage KAPDB0017EC Excess noise factor vs. gain (Typ. Ta=25 C, f=1 MHz) 1 nF (Typ. Ta=25 C, f=10 kHz, B=1 Hz) 10 S2384 EXCESS NOISE FACTOR TERMINAL CAPACITANCE M0.5 S2385 100 pF S3884 10 pF S2383/-10 S2382 S5139 =650 nm M0.3 M0.2 S2381 1 pF =800 nm 1 0 50 100 150 200 1 10 100 GAIN REVERSE VOLTAGE (V) KAPDB0018EB KAPDB0022EA Si APD S2381 to S2385, S5139, S3884 Dimensional outlines (unit: mm) 5.4 0.2 1.5 LENS 3.7 0.2 4.7 0.1 2.8 0.45 LEAD 13 0.45 LEAD 0.4 MAX. 2.8 PHOTOSENSITIVE SURFACE 0.4 MAX. PHOTOSENSITIVE SURFACE 4.65 0.1 0.65 0.15 5.4 0.2 WINDOW 2.0 MIN. 3.75 0.2 S5139 13 S2381, S2382, S2383/-10 2.54 0.2 2.54 0.2 1.2 MAX. 1.2 MAX. CASE CASE KAPDA0010EA S3884 KAPDA0018EA S2384 9.1 0.2 4.2 0.2 2.8 0.45 LEAD (20) 2.8 0.45 LEAD PHOTOSENSITIVE SURFACE (20) PHOTOSENSITIVE SURFACE 8.1 0.1 0.4 MAX. WINDOW 5.9 0.1 4.7 0.2 8.2 0.1 0.4 MAX. WINDOW 3.0 MIN. 9.2 0.2 5.08 0.2 5.08 0.2 1.5 MAX. 1.5 MAX. CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. CASE KAPDA0011EA S2385 13.9 0.2 0.5 MAX. 3.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 4.4 0.2 12.35 0.1 (15) WINDOW 9.1 0.1 7.5 0.2 INDEX MARK 1.4 1.0 MAX. CASE KAPDA0013EB KAPDA0012EA Si APD S2381 to S2385, S5139, S3884 TE-cooled type APD S4315 series Parameter Symbol Condition S4315 APD S2381 Effective active area *5 0.2 Spectral response range Peak sensitivity wavelength M=100 p Cooling temperature T Package *5: Active area in which a typical gain can be obtained. We welcome your request for active areas different from those listed above. S4315-01 S2382 0.5 400 to 1000 800 35 TO-8 S4315-02 S2383 1.0 Unit mm nm nm C - Dimensional outline (unit: mm) 15.3 0.2 6.4 0.2 1.9 0.2 14 0.2 WINDOW 10 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) COOLER (-) COOLER (+) THERMISTOR KAPDA0020EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KAPD1007E02 Mar. 2001 DN