S2381 to S2385, S5139, S3884
Features
l
Stable operation at low bias
l
High-speed response
l
High sensitivity and low noise
Applications
l
Optical fiber communications
l
Spatial light transmission
l
Rangefinder
PHOTODIODE
Si APD
Low bias operation, for 800 nm band
■ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area *2
size
Effective active
area
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *1
Package
(mm) (mm2) (°C) (°C)
S2381 φ0.2 0.03
S2382 ➀/K
S5139 ➁/L φ0.5 0.19
S2383
S2383-10 *3➀/K
TO-18
φ1.0 0.78
S3884 ➂/K φ1.5 1.77
S2384 ➃/K TO-5 φ3.0 7.0
S2385 ➄/K TO-8 φ5.0 19.6
-20 to +85 -55 to +125
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Breakdown
voltage
VBR
ID=100 µA
Dark
current *4
ID
Spectral
response
range
λ
Peak *4
sensitivity
wavelength
λp
Photo
sensitivity
S
M=1
λ=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Temp.
coefficient
of
VBR
Cut-off *4
frequency
fc
RL=50 Ω
Terminal
*4
capacitance
Ct
Excess
Noise
figure *4
x
λ=800 nm
Gain
M
λ=800 nm
Type No.
(nm) (nm) (A/W) (%)
Typ.
(V)
Max.
(V) (V/°C)
Typ.
(nA)
Max.
(nA) (MHz) (pF)
S2381 0.05 0.5 1000 1.5
S2382
S5139 0.1 1 900 3
S2383
S2383-10 *30.2 2 600 6
S3884 0.5 5 400 10
100
S2384 1 10 120 40 60
S2385
400 to 1000 800 0.5 75 150 200 0.65
330 40 95
0.3
40
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: Variant type of S2383, with light-shield provided on the periphery of the element
*4: Measured with the gain listed in this specification table
Note) Three ranks of breakdown voltage are available for S2381, S2382, S2383 and S3884. These are designated by a suffix
number as follows.
-01: 80 to 120 V
-02: 120 to 160 V
-03: 160 to 200 V
Si APD
S2381 to S2385, S5139, S3884
■ Spectral response ■ Quantum efficiency vs. wavelength
■ Dark current vs. reverse voltage ■ Gain vs. reverse voltage
KAPDB0020EB KAPDB0021EA
KAPDB0016EB KAPDB0017EC
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 ˚C, λ=800 nm)
200 400 600 800
1000
40
20
0
50
30
10
M=100
M=50
WAVELENGTH (nm)
QUANTUM EFFICIENCY (%)
60
200 400 600 800 1000
40
20
0
80
100 (Typ. Ta=25 ˚C)
REVERSE VOLTAGE (V)
DARK CURRENT
0 50 100 150 200
1 pA
100 pA
1 nA
10 nA (Typ. Ta=25 ˚C)
10 pA
S2384
S3884
S2382, S5139
S2381
S2383/-10
80 120100 140 160 180
1
10
100
1000
10000
REVERSE VOLTAGE (V)
GAIN
(Typ. λ=800 nm)
-20 ˚C
0 ˚C
20 ˚C
40 ˚C
60 ˚C
■ Terminal capacitance vs. reverse voltage ■ Excess noise factor vs. gain
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
10 pF
100 pF
1 nF (Typ. Ta=25 ˚C, f=1 MHz)
50 100
1 pF 2000 150
S2384 S2385
S3884
S2383/-10
S2382
S5139
S2381
GAIN
EXCESS NOISE FACTOR
110
1
10 (Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz)
100
M
0.5
λ=650 nm
M
0.3
λ=800 nm
M
0.2
KAPDB0018EB KAPDB0022EA
Si APD
S2381 to S2385, S5139, S3884
KAPDA0010EA
■ ■
■ ■
■ Dimensional outlines (unit: mm)
KAPDA0018EA
13
2.8
3.7 ± 0.2
0.45
LEAD
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CASE
PHOTOSENSITIVE
SURFACE
WINDOW
2.0 MIN.
1.2 MAX.
0.4 MAX.
0.65 ± 0.15
3.75 ± 0.2
4.65 ± 0.1
5.4 ± 0.2
PHOTOSENSITIVE
SURFACE
2.8
1.5 LENS
13
0.45
LEAD
2.54 ± 0.2
CASE
1.2 MAX.
0.4 MAX.
KAPDA0011EA KAPDA0012EA
KAPDA0013EB
(20) 4.7 ± 0.2
2.8
PHOTOSENSITIVE
SURFACE
5.08 ± 0.2
CASE
0.4 MAX.
1.5 MAX.
0.45
LEAD
WINDOW
3.0 MIN.
9.2 ± 0.2
8.2 ± 0.1
(20) 4.2 ± 0.2
2.8
0.45
LEAD
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
9.1 ± 0.2
5.08 ± 0.2
CASE
WINDOW
5.9 ± 0.1
0.4 MAX.
1.5 MAX.
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
INDEX MARK
1.4
(15) 4.4 ± 0.2
3.1
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
9.1 ± 0.1
PHOTOSENSITIVE
SURFACE
CASE
0.5 MAX.
1.0 MAX.
➀ S2381, S2382, S2383/-10 ➁ S5139
➂ S3884 ➃ S2384
➄ S2385
Si APD
S2381 to S2385, S5139, S3884
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
Cat. No. KAPD1007E02
Mar. 2001 DN
WINDOW
10 ± 0.2
10.2 ± 0.2
14 ± 0.2
15.3 ± 0.2
1.9 ± 0.2
6.4 ± 0.212 MIN.
0.45
LEAD
DETECTOR (ANODE)
DETECTOR (CATHODE)
COOLER (-)
COOLER (+)
THERMISTOR
PHOTOSENSITIVE
SURFACE
Parameter Symbol Condition S4315 S4315-01 S4315-02 Unit
APD - S2381 S2382 S2383 -
Effective active area *5-φ0.2 φ0.5 φ1.0 mm
Spectral response range λ400 to 1000 nm
Peak sensitivity wavelength λpM=100 800 nm
Cooling temperature ∆T35 °C
Package -TO-8 -
*5: Active area in which a typical gain can be obtained.
We welcome your request for active areas different from those listed above.
KAPDA0020EA
■ ■
■ ■
■ Dimensional outline (unit: mm)
TE-cooled type APD S4315 series
