CLA60MT1200NTZ High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1,25 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA60MT1200NTZ Backside: anode/cathode Three Quadrants Operation T2 Positive Half Cycle + (-) IGT T2 (+) IGT T1 REF IGT - 2 T2 T1 QII QI QIII QIV REF + IGT (-) IGT 3 1 T1 REF Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) Triac for line frequency Three Quadrants Operation - QI - QIII Planar passivated chip Long-term stability of blocking currents and voltages Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 High creepage distance between terminals Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827d CLA60MT1200NTZ Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 10 A 2 mA TVJ = 25C 1,28 V 1,56 V 1,25 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I RMS RMS forward current per phase 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 120 C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV It min. 1,61 V T VJ = 150 C 30 A 66 A TVJ = 150 C 0,86 V 12,5 m 0,55 K/W K/W 0,15 TC = 25C 230 W t = 10 ms; (50 Hz), sine TVJ = 45C 380 A t = 8,3 ms; (60 Hz), sine VR = 0 V 410 A t = 10 ms; (50 Hz), sine TVJ = 150 C 325 A t = 8,3 ms; (60 Hz), sine VR = 0 V 350 A t = 10 ms; (50 Hz), sine TVJ = 45C 720 As t = 8,3 ms; (60 Hz), sine VR = 0 V 700 As t = 10 ms; (50 Hz), sine TVJ = 150 C 530 As 510 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 25 t P = 300 s PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0,3 A/s; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0,3 A; V = VDRM non-repet., I T = pF 10 W 5 W 0,5 W 150 A/s 500 A/s TVJ = 150C 500 V/s VD = 6 V TVJ = 25 C 1,7 TVJ = -40 C 1,9 V VD = 6 V TVJ = 25 C 60 mA TVJ = -40 C 80 mA TVJ = 150C 0,2 V 1 mA TVJ = 25 C 90 mA R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0,3 A; di G /dt = V 0,3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 60 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0,3 A; di G /dt = 0,3 A/s VR = 100 V; I T = 30 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20150827d CLA60MT1200NTZ Package Ratings TO-268AA (D3Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 C -40 125 C 150 C 4 Weight FC 20 mounting force with clip d Spp/App Product Marking Logo C L A 60 MT 1200 N TZ IXYS Assembly Line Zyyww abcd N 9,4 mm terminal to backside 5,6 mm Part description Part No. Assembly Code 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-268AA (D3Pak) (2HV) Date Code Ordering Standard Ordering Number CLA60MT1200NTZ Similar Part CLA60MT1200NHB CLA60MT1200NHR Equivalent Circuits for Simulation I V0 R0 Package TO-247AD (3) ISO247 (3) * on die level Delivery Mode Tube Quantity 30 Code No. 512767 Voltage class 1200 1200 T VJ = 150 C Thyristor V 0 max threshold voltage 0,86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Marking on Product CLA60MT1200NTZ V m Data according to IEC 60747and per semiconductor unless otherwise specified 20150827d CLA60MT1200NTZ Outlines TO-268AA (D3Pak-HV) Dim. A A1 A2 b C C2 D D1 D2 D3 E E1 e H L L2 L3 L4 Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 0.40 0.65 1.45 1.60 13.80 14.00 11.80 12.10 7.50 7.80 2.90 3.20 15.85 16.05 13.30 13.60 5.450 BSC 18.70 19.10 1.70 2.00 1.00 1.15 0.250 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.010 0.045 0.057 0.016 0.026 0.057 0.063 0.543 0.551 0.465 0.476 0.295 0.307 0.114 0.126 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.067 0.079 0.039 0.045 0.010 BSC 0.150 0.161 2 3 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827d CLA60MT1200NTZ Thyristor 60 400 1000 VR = 0 V 50 40 300 IT ITSM TVJ = 45C 30 [A] [A] 20 TVJ = 45C 2 It [A2s] TVJ = 125C 200 TVJ = 125C 10 TVJ = 125C TVJ = 150C 0 0,0 TVJ = 25C 0,5 1,0 1,5 50 Hz, 80% VRRM 100 2,0 0,01 100 0,1 VT [V] 1 1 t [s] Fig. 3 I t versus time (1-10 s) 80 1: IGD, TVJ = 150C 70 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 56 1 4 50 tgd IT(AV)M [s] [A] 40 10 5: PGM = 5 W 6: PGM = 10 W lim. 100 1000 10000 10 typ. 1 10 0,1 10 30 20 4: PGAV = 0.5 W 1 dc = 1 0.5 0.4 0.33 0.17 0.08 60 TVJ = 125C 100 23 [V] 4 5 6 7 8 910 t [ms] 1000 10 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 0 100 1000 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [C] Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current at case temperature 0,6 60 dc = 1 50 0.5 0.4 0.33 40 0.17 P(AV) 0.08 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0,4 ZthJC 30 [W] i Rthi (K/W) 1 0.080 2 0.060 3 0.215 4 0.060 5 0.135 [K/W] 20 0,2 10 0 ti (s) 0.0100 0.0001 0.0200 0.2000 0.1100 0,0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827d Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: CLA60MT1200NTZ