My Minos! fei ed IRF1 40H 1 114211 43 7984142 S SAMSUNG _SEMICONDUCTOR: ING P76414e OO05079 4 Fenn a ee 98D. 05079 | " N-CHANNEL POWER MOSFETS FEATU RES - Low Rpson) Fast switching times Low input capacitance Extended safe operating area _TO-3. package (High current) PRODUCT SUMMARY Improved inductive ruggedness Rugged polysilicon gate cell structure improved high temperature reliability TO-3 Part Number Vos Rosion) lp D IRF140 100V 0.0859 27A IRFi41 6ov | 0.0850 27A G IRF142 ~ 100V 0.118 24A . Ss IRF143 _60V 0.1128 24A MAXIMUM RATINGS Characteristic Symbol IRF140 (RF141 IRF142 IRF143 Unit Drain-Source Voltage (1) Voss 100 60 100 60 Vide Drain-Gate Voltage (Res=1.0MQ) (1) VocR 100 60. . 100 60 Vde Gate-Source Voltage Ves 20 Vde Continuous Drain Current To=25C lo 27 27 24 24 Adc Continuous Drain Current Tc=100 G lp 17 17 15 15 Adc Drain CurrentPulsed (3} lpm 108 108 96 96 , Ade Gate CurrentPulsed low +1.5 Adc Total Power Dissipation @ To= 26C Pp 425 Watts Derate above 25C 1.0 WIC Operating and Storage _ e Junction Temperature Range Ty, Tstg 55 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8 from case for seconds Th 300 c Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature GEE samsuna SEMICONDUCTOR 78 DTA BIB! 48 EMICONDUCTOR INC ss 98D_05080 OO T-3A-IS . 17964142 SAMSUNG SE De ra64a42 coososa 5 ff tN CHANNEL ~ E ELECTRICAL CHARACTERISTICS (1c=25C unless otherwise specified) Characteristic Symbol | Type |Min! Typ | Max |Units Test Conditions IRF1 4 . Tee 700] - Vv |Ves=0V Drain-Source Breakdown BVpss : Voltage ; IRF141) 6 Vv lp=260, . . IRF143 ~ p=250uA Gate Threshold Voltage Vesin | ALL |2.0) | 4.0 | V |Vps=Ves, lp=250pA . . . f Gate-Source Leakage Forward! less ALL |.j| 100 | nA |Ves=20V f Gate-Source Leakage Reverse| tess | ALL | | |-100| nA |Vas=20V Zero Gate Voltage loss | ALL | 7 | 250 | HA |Vos=Max. Rating, Vas=OV Drain Current .| ~ | 1000] pA [Vps=Max. RatingX0.8, Vas=OV, To=125C (RF140 in-So inei4i}27| | | 4A On-State Drain-Source toxon) Vos>lpjon) XRosion) max.. Ves=10V Current (2) IRF142| A - IRF143/ "| IRF140) 10.06 /0.085| 9 Static Drain-Source On-State IRF141 : _ _ . . Rosjon) Ves=10V, fp=15A Resistance (2) IRF142 0 IRF143| ~ 0.09} 0.11 Forward Transconductance (2)] gts ALL |6.0/10.5| 8B [Vos>lIpion) XRosion) max lp=1 5A {input Capacitance Ciss ALL | [1320/1600] pF Output Capacitance Coss ALL | {| 600] 800 | pF |Ves=OV, Vos=25V, f=1.0MHz Reverse Transfer Capacitance Cres ALL | | 250] 300 | pF Turn-On Delay Time taton) ALL || | 90] ns Rise Time . t | ALL }] | 60 | ng |0o=0-5BVoss, Ib=15A, Zo=4.7 0 (MOSFET switching times are essentially -|Turn-Off Delay Time tatoth ALL | | | 89 | AS |independent of operating temperature. } Fall Time te ALL | | |} 30 | ns , Total Gate Charge (Gate-Source Plus Gate-Drain) Q, ALL | | 38] 60 | NC iveg=10V, Ip=34A, Vps=0.8 Max. Rating (Gate charge is essentially independent of .|Gate-Source Charge Qgs ALL | | 12 | | nc operating temperature. } Gate-Drain ("Miller") Charge Qag ALL | | 27 - nc THERMAL RESISTANCE Junction-to-Case Rinuc ALL j-| 1.0 | KW Case-to-Sink Rincs | ALL | | 0.1 | K/W |Mounting surface flat, smooth, and greased Junction-to-Ambient Riwa ALL | j 30 | K/W |Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycles2% (3) Repetitive rating: Pulse width limited by max. junction temperature GEE samsunc SEMICONDUCTOR . 79 er ee 34 MSUNG SEMTCOMNDUGTOR INC 98D 05001 OT PAG4Y 42 OOOSOaL 2? fh "_N-CHANNEL- IRF140/141/142/143 POWER MOSFETS - al (hm | WN icv] OD if B N uw p> 16 DE SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic - Symbol] Type |Min| Typ | Max Units Test Conditions - : IRF140 Continuous Source Current is IRF144{ | | 2? A (Body Diode) IRF 142 iRF143] ~ | | 24 | A Modified MOSFET symbol showing the integral IRF140 j}; 1108] a reverse P-N junction rectifier Pulse Source Current IRF141 (Body Diode} (3) IRF142 IRF143 IRF140 IRF141 IRF142 IRF143 Reverse Recovery Time tr ALL | | 500] | ns |Ts=150C, tp=27A, dip/dt=4 OOA/us Notes: (1) Ty=25C to 160C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature -j- 96 1 A -j|- 2.5] V [Tc=25C, ts=27A, Ves=0V Diode Forward Voltage (2) Vsp -|- 2.3] V [Te=25C, Is=24A, Vas=0V Ip, DRAIN CURRENT (AMPERES) ns oa Ip, DRAIN CURRENT (AMPERES) 3 10 20 \ Yas, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) 2 4 10 14 Typical Output Characteristics Typical Transfer Characteristics Io, DRAIN CURRENT {AMPERES} fp, DRAIN CURRENT (AMPERES) 2 IAF 1 2 3 4 8 10 2 10 100-200 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS} Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics . Maximum Safe Operating Area ' GE sausunc SEMICONDUCTOR oe 80 . _DT-3 9-1 pen ee oe ee ee a 18 7964142 SAMSUNG SEMICONDU CTOR INC. 98D _O5082_ DE IRF140/141/142/143 ro ) s om NOTES ay pt 1. Duty Factor. ont Per Unt Base=Racet 0 Deg CW TaTemPou Zee (- NORMALIZED EFFECTIVE TRANSIENT 2 THERMAL IMPEDANCE (PER UNIT) 0.01 2 11. SQUARE WAVE PULSE DURATION (SECONDS) Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration lpr, REVERSE DRAIN CURRENT (AMPERES) a gta, TRANSCONDUCTANCE (SIEMENS) 1 0 04 a8 1.2 16 20 24 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage Ip, ORAIN CURRENT (AMPERES) Typical Transconductance Vs. Drain Current 1.15 o an oO: oO Vas=10 418A BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Rosion}, DRAIN-TO-SOUACE ON RESISTANCE (NORMALIZED) 0.75 -40 40 80 120 160 ~40 40 60 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature PTbYL4e Goo508e 4 i ae AL OH ANNEL - POWER MOSFETS cee SAMSUNG SEMICONDUCTOR a1 __B T3913 } 7964142 SAMSUNG SEMICONDUCTOR INC 98D 05083. D T-8443 S98 DEM 7ab4a42 ooo0soa3 a J: ee tee A CHANNEL . IRF 140/141/142/143 POWER MOSFETS g = w < 3 wi / z 8 5 5 ! = 6 ; 3 Cass. = Crs t 0 10 20 3 "(40 50 0 20 100 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qy, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Orain to Source Voltage - Typical Gate Charge Vs. Gate-To-Source Voltage PULSE OF 2 a qeAtwa. crrect = * ' I U = OF 2 Ops PULSE IS g 4 . wn z # g 3 5 g w & 9 Pa 5 3 2 : = e 2 5 z s i a 3 5 c 20 40 _ 80 80 100 25 50 75 100 125 160 - to, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C) \ . Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature ? E = z Q < a 8 a oc Ww 2 6 = 40 ra 9 20 40 60 80 100 120 140 160 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve ce SAMSUNG SEMICONDUCTOR . 82 =