Sep.1998
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM100DSA120 is a 1200V,
100 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 100 120
Dimensions Inches Millimeters
A 4.33 110.0
B 3.66±0.010 93.0±0.25
C 1.77 45.0
D 1.34 34.0
E 1.14 +0.04/-0.02 29.0 +1/-0.5
F 1.02 26.0
G 0.98 25.0
H 0.702 17.84
J 0.55 14.0
K 0.51 13.0
Dimensions Inches Millimeters
L 0.47 12.0
M 0.33 8.5
N 0.28 7.0
P 0.230 5.84
Q 0.22 Dia. Dia. 5.5
R M5 Metric M5
S 0.100 2.54
T 0.08 Dia. Dia. 2.0
U 0.08 2.0
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM100DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
N
J
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
F
E
K
H 0.64 MM SQ. PIN
(10 TYP.)
SNR
VNC
FNO
VN1
CN1
VP1
SPR
CP1
VPC
FPO
N SIDE P SIDE
E2
SINK
SENS
OUT2
OUT1
GND
TEMP
C2E1
IN
VCC
VNC
SR
FO
CN1
SNR
FNO
VN1
SINK
SENS
OUT2
OUT1
GND
VCC TEMP
FO
SR
IN
VP1
FPO
SPR
CP1
VPC
C1
L UM
GGG B
A
D
C
P
S
S
S
S
1P
N
C2E1 E2 C1
21 3 4 5
23 4 5
T - DIA.
(4 TYP.)
Q - DIA.
(2 TYP.)
R - M5 THD.
(3 TYP.)
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Sep.1998
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol PM100DSA120 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M5 Mounting Screws — 2.5~3.5 N · m
Mounting Torque, M5 Main Terminal Screws — 2.5~3.5 N · m
Module Weight (Typical) — 340 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) VCC(prot.) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VP1-VPC, VN1-VNC) VD 20 Volts
Input Voltage (Applied between CP1-VPC, CN1-VNC) VCIN 10 Volts
Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc) VFO 20 Volts
Fault Output Current (Sink Current at FPO, FNO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 5V) VCES 1200 Volts
Collector Current, (Tc = 25°C) IC 100 Amperes
Peak Collector Current, (Tc = 25°C) ICP 200 Amperes
Supply Voltage (Applied between C1 - E2) VCC 900 Volts
Supply Voltage, Surge (Applied between C1 - E2) VCC(surge) 1000 Volts
Collector Dissipation PC 595 Watts
MITSUBISHI INTELLIGENT POWER MODULES
PM100DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 145 230 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V 200 340 — Amperes
Over Current Delay Time toff(OC) VD = 15V — 5 — µs
Over Temperature Protection OT Trip Level 100 110 120 °C
OTr Reset Level 85 95 105 °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVr Reset Level — 12.5 — Volts
Supply Voltage VD Applied between VP1-VPC, VN1-VNC 13.5 15 16.5 Volts
Circuit Current ID VD = 15V, VCIN = 5V, VN1-VNC — 19 26 mA
VD = 15V, VCIN = 5V, VXP1-VXPC — 19 26 mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) CP1-VPC, CN1-VNC 1.7 2.0 2.3 Volts
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
SXR Terminal Output Voltage VSXR -20°C ≤ Tj ≤125°C, Rin = 6.8 kΩ (SPR, SNR) 4.5 5.1 5.6 Volts
MITSUBISHI INTELLIGENT POWER MODULES
PM100DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCEX, Tj = 25°C — — 1 mA
VCE = VCEX, Tj = 125°C — — 10 mA
Emitter-Collector Voltage VEC -IC = 100A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 100A — 2.3 3.2 Volts
VD = 15V, VCIN = 0V, IC = 100A, — 2.1 2.9 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.5 1.4 2.5 µs
trr VD = 15V, VCIN = 0 ↔ 5V — 0.2 0.4 µs
tC(on) VCC = 600V, IC = 100A — 0.4 1.0 µs
toff Tj = 125°C — 2.5 3.5 µs
tC(off) — 0.6 1.1 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT — — 0.21 °C/Watt
Rth(j-c)F Each FWDi — — 0.35 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.060 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across C1-E2 Terminals 0 ~ 800 Volts
VD Applied between VP1-VPC, VN1-VNC 15 ± 1.5 Volts
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) CP1-VPC, CN1-VNC 4.0 ~ VSXR Volts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 3.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM100DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
0
1
2
3
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
SATURATION VOLTAGE V
CE(sat)
, (VOLTS)
0 12040 80
V
D
= 15V
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
0
1
2
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
, (VOLTS)
12 14 16 18 20
T
j
= 25
o
C
T
j
= 125
o
C
3
0
V
D
= 15V
V
CIN
= 0V
0 1 2
0
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
3
40
80
120
T
j
= 25
o
C
V
CIN
= 0V
V
D
= 17V 13
15
20
60
100
10
1
10
2
10
3
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
on
10
0
10
1
t
off
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
10
2
10
3
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
c(on)
, t
c(off)
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
c(on)
10
0
10
1
t
c(off)
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
10
2
10
3
10
-2
COLLECTOR REVERSE CURRENT,
-
I
C
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10
-1
10
0
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
10
1
10
2
t
rr
I
rr
0 01.0 2.5
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
DIODE FORWARD CHARACTERISTICS
10
1
10
2
0.5 1.5 2.0
T
j
= 25
o
C
T
j
= 125
o
C
V
D
= 15V
V
CIN
= 5V
0
90
100
110
120
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
12 14 16 18 20
T
j
= 25
o
C
80
0
80
90
120
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
0 50 100 150-50
V
D
= 15V
110
100
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Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
0 0
40
60
80
100
120
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
-50 0 50 100 150
V
D
= 15V
11
12
13
14
15
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (
o
C)
UV TRIP-RESET LEVEL,
UV
t
, UV
r
, (VOLTS)
-50 1500 50 100
UV
t
UV
r
TIME, (s)
TRANSIENT IMPEDANCE, Z
th( j-c)
, (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)Q
= 0.21
o
C/W
10
-2
10
-3
TIME, (s)
TRANSIENT IMPEDANCE, Z
th( j-c)
, (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
10
1
10
-1
10
0
10
1
10
0
10
-1
10
-2
10
-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)D
= 0.35
o
C/W
10
-2
10
-3
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