POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
1
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
General Description
The AP1661 is an active power factor control IC which
is designed mainly for use as pre-converter in elec-
tronic ballast, AC-DC adapters and off-line SMPS
applications.
The AP1661 includes an internal start-up timer for
stand-alone applications, a one-quadrant multiplier to
realize near unity power factor and a zero current
detector to ensure DCM boundary conduction opera-
tion. The totem pole output stage i s capable of driving
power MOSFET with 600mA source current and
800mA sink current.
Designed with advanced BiCMOS process, the
AP1661 features low start-up current, low operation
current and low power dissipation. The AP1661 also
has rich protection features including over-voltage pro-
tection, input under-voltage lockout with hysteresis
and multiplier output clamp to limit maximum peak
current.
This IC is available in SOIC-8 and DIP-8 packages.
Features
·Zero Current Detection Control for DCM Bound-
ary Conduction Mode
·Adjustable Output Voltage with Precise Over-
Voltage Protection
·Low Start-up Current with 50μA Typical Value
·Low Operating Supply Current with 4mA Typical
Value
·1% Precision Internal Reference Voltage
·Internal Start-up Timer
·Disable Function for Reduced Current
Consumption
·Totem Pole Output with 600mA Source Current
and 800mA Sink Current Capability
·Under-Voltage Lockout with 2.5V of Hy steresis
Applications
·AC-DC Adapter
·Off-line SMPS
·Electronic Ballast
Figure 1. Package Types of AP1661
SOIC-8 DIP-8
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
2
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Pin Configuration
Pin Number Pin Name Function
1 INV Inverting input of the error amplifier
2 COMP Output of the error amplifier
3 MULT Input of the multiplie r
4 CS Input of the current control loop comparator
5ZCD
Zero current detection input. If it is connected to GND, the device is
disabled
6 GND Ground. Current return for gate driver and control circuits of the IC
7 GD Gate driver output
8 VCC Supply voltage of gate driver and control circuits of the IC
Pin Description
(SOIC-8/DIP-8)
VCC
GD
GND
ZCD
INV
COMP
MULT
CS
M Package/P Package
Figure 2. Pin Configuration of AP1661 (Top View)
8
7
6
5
1
2
3
4
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
3
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Functional Block Diagram
Figure 3. Functional Block Diagram of AP1661
Ordering Information
BCD Semiconductor's Pb -free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Circuit Type
Package
M: SOIC-8
G1: Green
AP1661 -
TR: Tape and Reel
Blank: Tube
P: DIP-8
Package Temperature
Range Part Number Marking ID Packing Type
Lead Free Green Lead Free Green
SOIC-8 -40 to 85oCAP1661M-E1 AP1661M-G1 1661M-E1 1661M-G1 Tube
AP1661MTR-E1 AP1661MTR-G1 1661M-E1 1661M-G1 Tape & Reel
DIP-8 -40 to 85oCAP1661P-E1 AP1661P-G1 AP1661P-E1 AP1661P-G1 Tube
INV
VCC
Multiplier
Overvoltage
Detection
Voltage
Regulation
Starter
DisableEnable
Driver
R
SQ
Internal
Supply 7.5V
22V
2.1V
1.6V
Vref
R1
R2
COMP MULT CS
GD
GND
ZCD
Zero Current
Detector
1
8
56
7
4
32
13V VCC
E1: Lead Free
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
4
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VCC 20 V
Operating Supply Current ICC 30 mA
Driver Output Current IOUT ±800 mA
Input/Output of Error Amplifier, Input of
Multiplier VINV, VCOMP,
VMULT -0.3 to 7 V
Current Sense Input VCS -0.3 to 7 V
Zero Current Detector Input IZCD Source -50 mA
Sink 10
Thermal Resistance Junction-Ambient RθJA DIP-8 100 oC/W
SOIC-8 150
Power Dissipation and Thermal Charac-
teristics @ TA=50oCPTOT DIP-8 1 W
SOIC-8 0.65
Operating Junction Temperature TJ-40 to150 oC
Storage Temperature Range TSTG -65 to 150 oC
Lead Temperature (Soldering, 10
Seconds) TLEAD 260 oC
ESD (Human Body Model) 3000 V
ESD (Machine Model) 300 V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended peri ods may affect device reliability.
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
5
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Parameter Symbol Test Conditions Min Typ Max Unit
Under Voltag e Lock ou t Section
Turn-on Threshold VCC-ON VCC rising 11 12 13 V
Turn-off Threshold VCC-OFF VCC falling 8.7 9.5 10.3 V
Hysterisis VCC-HYS 2.2 2.5 2.8 V
VCC Operating Range VCC After turn-on 10.3 20 V
Total Supply Section
Start-up Current ISTART-UP VCC=11V before turn-on 20 50 90 μA
Operating Supply Current ICC CL=1nF @frequency=70KHz 4 5.5 mA
In OVP condition Vpin1=2.7V 1.4 2.1
Quiescent Current IQ2.6 4 mA
Quiescent Current IQVpin5≤150mV, VCC>VCC-OFF 1.4 2.1 mA
Vpin5≤150mV, VCC<VCC-OFF 20 50 90 μA
VCC Zener Voltage VZICC=20mA 202224V
Error Amplifier Section
Voltage Feedback Input
Threshold VINV TA=25 oC2.465 2.5 2.535 V
10.3V<VCC<20V 2.44 2.56
Line Regulation VCC=10.3V to 20V 2 5 mV
Input Bias Current IINV VINV=0V -0.1 -1 μA
Voltage Gain GVOpen Loop 60 80 dB
Gain Bandwidth GB 1 MHz
Output
Voltage
Upper Clamp
Voltage VCOMP-H ISOURCE=0.5mA 5.8
V
Lower Clamp
Voltage VCOMP-L ISINK=0.5mA 2.25
Output
Current Source Current ICOMP-H VCOMP=4V, VINV=2.4V -2-4-8
mA
Sink Current ICOMP-L VCOMP=4V, VINV=2.6V 2.5 4.5
Enable Threshold VINV-TH 720 mV
Multiplier Section
Linear Input Voltage Range VMULT 0 to 3 0 to 3.5 V
Output Maximum Slope ΔVCS/
ΔVMULT
VMULT: 0 to 0.5V,
VCOMP=Upper Clamp Voltage 1.7
Gain k VMULT=1V, VCOMP=4V 0.45 0.6 0.75 1/V
Electrical Characteristics
VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified.
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
6
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Parameter Symbol Test Conditions Min Typ Max Unit
Current Sense Section
Input Bias Current ICS VCS =0V -0.05 -1.0 μA
Current Sense Offset Volt-
age VCS-OFFSET VMULT=0V 30 mV
VMULT=2.5V 5
Current Sense Reference
Clamp VCS-CLAMP VCOMP=Upper Clamp Voltage,
VMULT=2.5V 1.6 1.7 1.8 V
Delay to Output td(H-L) 200 450 ns
Zero Current Detection Section
Input Threshold Voltage,
VZCD Rising Edge VZCD-R (Note 2) 2.1 V
Hysteresis Voltage VZCD-RTH (Note 2) 0.3 0.5 0.7 V
Upper Clamp Voltage VZCD-H IZCD=20μA 4.5 5.1 5.9 V
IZCD=3mA 4.7 5.2 6.1
Lower Clamp Voltage VZCD-L IZCD=-3mA 0.3 0.65 1 V
Source Current Capability IZCD-SR -3 -10 mA
Sink Current Capability IZCD-SN 310mA
Sink Bias Current IZCD-B 1V≤VZCD≤4.5 V 2 μA
Disable Threshold VZCD-DIS 150 200 250 mV
Disable Hysterisis VZCD-HYS 100 mV
Restart Current After
Disable IZCD-RES VZCD<VDIS; VCC>VCC-OFF -100 -200 -300 μA
Drive Output Section
Dropout Voltage VOH IGD-SOURCE=200 mA, VCC=12V 2.5 3 V
IGD-SOURCE=20 mA, VCC=12V 2 2.6
VOL IGD-SINK=200 mA, VCC=12V 0.9 1.9 V
Output Voltage Rise Time tRCL=1nF 40 100 ns
Output Voltage Fall Time tFCL=1nF 40 100 ns
Output Clamp Voltage VO-CLAMP IGD-SOURCE=5 mA, VCC=20V 10 13 15 V
UVLO Saturation VOS VCC=0 to VCC-ON, ISINK=10mA 1.1 V
Output Over Voltage Section
OVP Triggering Current IOVP 35 40 45 μA
Static OVP Threshold VOVP_TH 2.12.252.4 V
Restart Timer
Restart Timer tSTART 70 150 400 μs
Electrical Characteristics (Continued)
VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified.
Note 2: Limits over the full temperature are gu aranteed by design, but not tested in production.
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
7
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics
Figure 4.
OVP Current Threshold vs. Temperature
Figure 5.
Supply Current vs. Supply Voltage
Figure 6.
Under Voltage Lockout Threshold vs. Temperature Figure 7. Voltage Feedback Input Threshold
-40 -20 0 20 40 60 80 100 120 140
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
IOVP (μA)
Temperature (OC)
0 5 10 15 20 25
0
1
2
3
4
5
6
Supply Current (mA)
Supply Voltage (V)
-60 -40 -20 0 20 40 60 80 100 120 140
9.5
10.0
10.5
11.0
11.5
12.0
12.5
VCC-OFF
VCC-ON
Temperature (OC)
Voltage (v)
vs. Temperature
-40 -20 0 20 40 60 80 100 120 140
2.350
2.375
2.400
2.425
2.450
2.475
2.500
2.525
2.550
Voltage (V)
Temperature (OC)
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
8
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 8.
Output Saturation Voltage vs. Sink Current
Figure 9. Output Saturat i on Voltage vs. Source Current
Figure 10. Multiplier Characteristics Family
0 100 200 300 400 500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Voltage (V)
Current (mA)
0 100 200 300 400 500
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
Voltage (V)
Current (mA)
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
9
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Functional Block Description
AP1661 is a high p erformance power factor correction
controller which operates in DCM boundary conduc-
tion mode. The PFC converter's switch will be turned
on when the inductor current reduces to zero and
turned off when the sensed inductor current reaches the
required reference which is decided by the output of
multiplier.
Error Amplifier and Over-Voltage Protec-
tion
The error amplifier regulates the PFC output voltage.
The internal reference on the non-inverting input of the
error amplifier is 2.5V. The error amplifier's inverting
input (INV) is connected to an external resistor divider
which senses the output voltage. The output of error
amplifier is one of the two inputs of multiplier. A
compensation loop is connected outside between INV
and the error amplifier output. Normally, the
compensation loop bandwidth is set very low to realize
high power factor for PFC converter.
To make the over voltage protection fast, the internal
OVP function is added. If the output over voltage
happens, excess current will flow into the out put pin of
the error amplifier through the feedback com pensation
capacitor. (see Figure 11) The AP1661 monitors the
current flowing into the error amplifier output pin.
When the detected current is higher than 40μA, the
dynamic OVP is trigged. The IC will be disabled and
the drive signal is stopped. If the output over voltage
lasts so long that the output of error amplifier goes
below 2.25V, static OVP will take place. Also the IC
will be disabled until the outp ut of error am plifi er g oes
back to its linear region. R1 and R2 (see Fig. 11) will
be selected as below:
Multiplier
The multiplier has two inputs. One (Pin 3) is the
divided AC sinusoidal voltage which makes the current
sense comparator threshold voltage vary from zero to
peak value. The other input is the output of error
amplifier (Pin 2). In this way, the input average current
wave will be sinusoidal as well as reflects the load
status. Accordingly a high power factor and good THD
are achieved. The multiplier transfer character is
designed to be linear over a wide dynamic range,
namely, 0 V to 3V for Pin 3 and 2.0 V to 5.8 V for Pin
2. The relationship between the multiplier output and
inputs is described as below equation.
where VCS (Multiplier output) is the reference for the
current sense, k is the multiplier gain, VCOMP is the
voltage on pin 2 (error amplifier output ) and VMULT is
the voltage on pin 3.
Current Sense/Current Sense Comparator
The PFC switch's turn-on current is sensed through an
external resistor in series with the switch. When the
sensed voltage exceeds the threshold voltage (the
multiplier output), the current sense comparator will
become low and the external MOSFET will be turned
off. This insures a cycle-by-cycle current mode control
operation. The maximum current sense reference is
1.8V. The max value usually happens at startup process
or abnormal conditions such as short load.
1
5.22
1−=
V
Vo
R
R
A
V
ROVP
μ
40
1
Δ
=
MULTCOMPCS VVkV
×
−
×
=
)5.2(
Multiplier PWM
+
Error
Amplifier
40µA
2.25V
2.5V
3
2
1
INV
COMP MULT
Driver
R1
R2
VOI
AP1661
IOVP
IOVP
Figure 11. Error Amplifie r and OVP Block
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
10
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Application
Figure 12. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit
Functional Block Description
(Continued)
Zero Current Detection
AP1661 is a DCM boundary conduction current mode
PFC controller. Usually, the zero current detection
(ZCD) voltage signal comes from the auxiliary
winding of the boost inductor. When the ZCD pin
voltage decreases below 1.6V, the gate drive signal
becomes high to turn on the external MOSFET. 500mV
of hysteresis is provided to avoid false triggering. The
ZCD pin can be used for disabling the IC. Making its
voltage below 0.15V or short to the ground will disable
the device thus reduce the IC supply current
consumption.
VCC
MULT GND
F1
2.5A/250V
L1
500μH
NTC
C1
220nF/275V
D1
C2
220nF
500V
C3
330nF
500V
L2 160μH
R3
1M
R4
680K
R5
10K C4
100nF
C10
22μF
25V
R6 180K
R7 180K
D3
1N4148 Z1
15V
C6
12nF R8
100
R9
68K
L3 D2 MUR460
Q1
11N65C3
R1
820K
R2
470K
R10
8.2K
COMP INV
GD
CS
R16
0.33/1W
R13
10
R14
12K
C7
680nF
C8
330nF C9
47μF
450V
L3:
Core type RM10, materi al 3C90
primary: 660uH, 66 turns of litze wire 0.1mm*30
secondary: 7 turns w ire of 0.2mm
JC2
JC1
85 to 265V AC
GND
LN
ZCD
U1
AP1661
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
11
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions
DIP-8 Unit: mm(inch)
4°
6°
R0.750(0.030)
0.254(0.010)TYP
0.130(0.005)MIN
8.200(0.323)
9.400(0.370)
0.204(0.008)
0.360(0.014)
7.620(0.300)TYP
4°
6°
5°
0.700(0.028)
9.000(0.354)
9.400(0.370)
3.710(0.146)
4.310(0.170)
3.000(0.118)
3.600(0.142)
0.360(0.014)
0.560(0.022) 2.540(0.100) TYP
6.200(0.244)
6.600(0.260)
3.200(0.126)
3.600(0.142)
0.510(0.020)MIN
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
1.524(0.060) TYP
POWER FACTOR CORRECTION CONTROLLER AP1661
Data Sheet
12
Aug. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions (Continued)
SOIC-8 Unit: mm(inch)
0°
8°
1°
5°
R0.150(0.006)
R0.150(0.006)
1.000(0.039)
0.330(0.013)
0.510(0.020)
1.350(0.053)
1.750(0.069)
0.100(0.004)
0.300(0.012)
0.900(0.035)
0.800(0.031)
0.200(0.008)
3.800(0.150)
4.000(0.157)
7°
7°
20:1
D
1.270(0.050)
TYP
0.190(0.007)
0.250(0.010)
8°
D
5.800(0.228)
6.200(0.244)
0.675(0.027)
0.725(0.029)
0.320(0.013)
8°
0.450(0.017)
0.800(0.031)
4.700(0.185)
5.100(0.201)
φ
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277