C460XB290-0104-A - Cree, Inc.

G•SiC® Technology

XBright™ LEDs

Cxxx-XB290-S0100-A

Features Applications

• XBright™ Performance

– 12.0 mW min Blue (460nm and 470nm)

– 7.0 mW min Green (527nm)

• Single Wire Bond Structure

• Class II ESD Rating

• Outdoor LED Video Displays

• Automotive Dashboard Lighting

• White LEDs

• Backlighting

Description

Cree's XB™ series of XBright™ LEDs are the next generation of solid state LED emitters that combine highly

efficient InGaN materials with Cree's proprietary G•SiC® substrate to deliver superior price performance for

high intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light

extraction efficiency, and require only a single wire bond connection. Cree's XB series chips are tested for

conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are

useful in a broad range of applications such as outdoor full motion LED video signs, automotive lighting and

white LEDs, yet can also be used in high volume applications such as LCD backlighting.

Cxxx-XB290-S0100-A Chip Diagram

Top View

G•SiC® LED

300 x 300 µ

Top Area

200 x 200 µm

Bond Pad

96 µm Diameter

Cathode (-)

h = 250

µm

Backside

Metallization

210 x 210 µm Anode (+)

InGaN

SiC Substrate

Bottom View Die Cross Section

Junction Area

248 x 248 µm

CPR3BC Rev. D

G•SiC® Technology

XBright™ LEDs

Cxxx-XB290-S0100-A

Maximum Ratings at TA = 25°C Notes 1&3 Cxxx-XB290-S0100-A

DC Forward Current 30mA

Peak Forward Current (1/10 duty cycle @ 1kHz) 100mA

LED Junction Temperature 125°C

Reverse Voltage 5 V

Operating Temperature Range -40°C to +100°C

Storage Temperature Range -40°C to +100°C

Electrostatic Discharge Threshold (HBM) Note 2 1000V

Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2

Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3

Sorted Kit

Part number

Forward Voltage

(Vf, V)

Reverse Current

[I(Vr=5V), µA]

Typ Max Max

C460-XB290-S0100-A 3.6 4.0 10

C470-XB290-S0100-A 3.6 4.0 10

C527XB290-S0100-A 3.7 4.0 10

Mechanical Specifications Cxxx-XB290-S0100-A

Description Dimension Tolerance

P-N Junction Area (µm) 248 x 248 ± 25

Top Area (µm) 200 x 200 ± 25

Bottom Area (Substrate) (µm) 300 x 300 ± 25

Chip Thickness (µm) 250 ± 25

Au Bond Pad Diameter (µm) 96 -5, +15

Au Bond Pad Thickness (µm) 1.2 ± 0.5

Au/Sn Back Contact Metal Area (µm) 210 x 210 ± 25

Au/Sn Back Contact Metal Thickness (µm) 1.7 ± 0.3

Notes:

1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000

epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used

by Seller. The forward currents (DC and Peak) are not limited by the G •SiC die but by the effect of the LED junction

temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature

should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C

(< 5 seconds). See Cree XBright Applications Note for more assembly process information.

2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).

The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding

the ability of Products to withstand ESD.

3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when

assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical

values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no

assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages

with Hysol OS4000 epoxy. Optical characteristics were measured in an integrating sphere. Illuminance E.

CPR3BC Rev. D

G•SiC® Technology

XBright™ LEDs

Cxxx-XB290-S0100-A

Notes (continued):

4) Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright

Applications Note for detailed packaging recommendations.

5) Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the

side of the chip. See Cree XBright Applications Note for more information.

Standard Bins for XB290:

LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from

only one bin. Sorted die kit (Cxxx-XB290-S0100-A) orders may be filled with any or all bins (Cxxx-XB290-

01xx-A) contained in the kit.

15.0mW

12.0mW

15.0mW

12.0mW

Radiant FluxRadiant Flux

C460XB290-0105-A

C460XB290-0101-A

C460XB290-0106-A C460XB290-0107-A C460XB290-0108-A

C470XB290-0104-A

C470XB290-0105-A C470XB290-0106-A C470XB290-0107-A C470XB290-0108-A

C460XB290-S0100-A

C470XB290-S0100-A

455nm 457.5nm 460nm 462.5nm 465nm

C460XB290-0102-A C460XB290-0103-A C460XB290-0104-A

475nm

Dominant Wavelength

465nm 467.5nm 470nm 472.5nm

C470XB290-0101-A C470XB290-0102-A C470XB290-0103-A

C527XB290-0104-A C527XB290-0105-A C527XB290-0106-A

8.0mW

C527XB290-0101-A C527XB290-0102-A C527XB290-0103-A

7.0mW

520nm 525nm 530nm 535nm

Radiant Flux

C527XB290-S0100-A

Dominant Wavelength

CPR3BC Rev. D

G•SiC® Technology

XBright™ LEDs

Cxxx-XB290-S0100-A

Characteristic Curves:

These are representative measurements for blue XBright products. Actual curves will vary slightly for the various radiant flux and

dominant wavelength bins.

Wavelength Shift vs Forward Current - All Products

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

0 5 10 15 20 25 30

If (mA)

Shift (nm)

527nm

470nm

Forward Current vs Forward Voltage - All Products

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Vf (V)

If (mA)

Relative Intensity vs Forward Current - All Products

0.0

20.0

40.0

60.0

80.0

100.0

120.0

140.0

0 5 10 15 20 25 30

If (mA)

Relative Intensity vs Wavelength - All Products

20%

40%

60%

80%

100%

Wavelength (nm)

Relative Intensity (%)

500

400