AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Value Unit Ri JC Ri JC 0.7 0.7 C/W C/W Table 2. Absolute Maximum Ratings* AGR21090EU (unflanged) AGR21090EF (flanged) Figure 1. Available Packages Features Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: -- Output power: 19 W. -- Power gain: 14.5 dB. -- Efficiency: 26%. -- IM3: -33 dBc. -- ACPR: -36 dBc. -- Return loss: -12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 90 W continuous wave (CW) output power. Large signal impedance parameters available. Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR21090EU AGR21090EF Derate Above 25 C: AGR21090EU AGR21090EF CW RF Input Power (VDS = 31 V) Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS -0.5, 15 Vdc PD PD 250 250 W W -- -- -- 1.4 1.4 30 W/C W/C W TJ 200 C TSTG -65, 150 C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR21090E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Symbol Min Typ Max V(BR)DSS 65 -- -- IDSS -- Unit Off Characteristics 100 A) Drain-source Breakdown Voltage (VGS = 0, ID = 300 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) -- Vdc -- -- 3 150 9 Adc -- 6.4 -- S 3.0 3.7 Adc On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) GFS Gate Threshold Voltage (VDS = 10 V, ID = 300 A) VGS(TH) 2.8 Drain-source On-voltage (VGS = 10 V, ID = 1 A) VDS(ON) -- Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA) VGS(Q) 3.4 4.8 Vdc 0.11 -- Vdc 4.6 Vdc Table 5. RF Characteristics Parameter Symbol Min Typ Max Unit -- 2.1 -- pF 14.0 14.5 -- dB -- -33 -32 dBc ACPR -- -36 -35 dBc IRL -- -12 -9 dB Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) CRSS Test Fixture) Functional Tests (in Supplied Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain* Drain Efficiency* Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz) Input Return Loss* Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz) Output Mismatch Stress (VDD = 28 V, POUT = 90 W (CW), IDQ = 800 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles]) GPS IM3 P1dB * 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 800 mA, and POUT = 19 W average. Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc 0.5 V. 24 85 26 93 -- -- % W No degradation in output power. AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR21090E FB1 VGG R3 R2 R4 Z1 RF INPUT VDD + C4 C1 C5 Z2 C19 + + C3 Z3 C2 Z4 Z5 Z7 Z6 Z9 2 1 3 Z10 C7 Z11 C8 C9 Z12 C10 C11 Z13 C6 Z14 C18 Z8 DUT + C13 C14 C15 C16 RF OUTPUT PINS: 1. DRAIN 2. GATE 3. SOURCE C17 A. Schematic Parts List: Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.; Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.; Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in. (R) ATC chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X. (R) Sprague tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 F, 35 V. (R) Kemet 1206 size chip capacitor: C10, C16: 0.1 F C1206104K5RAC7800. (R) Murata 0805 size chip capacitor: C9, C15: 0.01 F GRM40X7R103K100AL. (R) Johanson Giga-Trim variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL. 1206 size chip capacitor: C4, C8, C14: 22000 pF. 1206 size chip resistor: R2 4.7 , R3 1.02 k, R4 560 k. (R) Fair-Rite ferrite bead: FB1 2743019447. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR21090E Test Circuit AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET U CT 8 0.6 90 IN D 0. 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 20 0.4 0.1 ) / Yo (-jB CE IV CT DU IN R 0 2. 1.8 1.6 1.4 0.11 -100 -90 0.13 0.1 -70 0. 07 30 40 -1 43 0. 8 0.0 2 0.4 .41 0 0.4 0.39 0.38 F 0.37 0.12 9 0.0 -1 1. 0 1.0 0 5 0.14 -80 0.36 -110 0 -12 (-j 06 Z X/ 0.9 1.2 0.15 0.35 -75 ,O o) 0.7 0 -4 -4 4 -70 -5 6 0.8 5 -3 0.1 0.3 5 3 -60 -5 0.3 7 -60 0.1 VE 0.6 32 CA P AC I TI T -85 AN PT CE US ES 0.2 -30 CE CO M 0 -65 .5 18 0. RE AC TA N EN 0. 0 -5 -25 0. PO N 4 0.4 31 0. 19 0. 4 0. 0.6 0 -20 5 0.8 3. 0.3 0.0 4.0 0.2 5 0.4 0 1. -15 f1 ZS 0 0 0.2 8 f3 f1 -4 .4 ZL 0.2 2 0.3 f3 0.2 9 0.2 1 -30 6 0.4 4 0.0 0 -15 -80 8 0. 5.0 0.2 -10 0.48 10 0.6 -20 D L OA D < OW A R 7 HST 0.4 N GT -170 EL E V WA < -90 -160 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.49 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 5 0.0 > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 180 170 Typical Performance Characteristics MHz (f) 2110 (f1) 2140 (f2) 2170 (f3) ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 2.52 - j4.60 3.10 - j3.11 2.46 - j4.42 3.01 - j3.05 2.37 - j4.25 2.94 - j2.99 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 16.50 IDQ = 1100 mA 16.00 IDQ = 950 mA 15.50 GPS (dB) S 15.00 14.50 14.00 13.50 13.00 12.50 12.00 IDQ = 500 mA IDQ = 650 mA 11.50 1.00 IDQ = 800 mA 10.00 100.00 POUT (W) PEPZ Test Conditions: VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz. Two-tone measurement, 10 MHz tone spacing. Figure 4. Two-Tone Power Gain vs. Output Power and IDQ -20.00 IDQ = 500 mA -25.00 -30.00 IDQ = 650 mA IMD3 (dBc)Z -35.00 -40.00 -45.00 -50.00 -55.00 -60.00 -65.00 IDQ = 1100 mA IDQ = 800 mA IDQ = 950 mA -70.00 1.00 10.00 100.00 POUT (W) PEPZ Test Conditions: VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz. Two-tone measurement, 10 MHz tone spacing. Figure 5. IMD3 vs. Output Power and IDQ 1000.00 AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0.0 -5.0 -10.0 IMD (dBc)Z -15.0 -20.0 IM3 -25.0 -30.0 IM5 -35.0 -40.0 IM7 -45.0 -50.0 -55.0 0.1 1 10 100 TWO-TONE SPACING (MHz)Z Test Conditions: VDD 28 Vdc, f0 = 2140 MHz, POUT = 90 W PEP. Two-tone measurement, 10 MHz tone spacing. 20.00 50.0 18.00 40.0 16.00 GAIN (dB)Z 14.00 12.00 30.0 GAIN 20.0 10.0 10.00 0.0 8.00 -10.0 6.00 -20.0 4.00 2.00 0.00 5.00 IM3 ACPR 10.00 15.00 20.00 25.00 30.00 POUT (W-AVERAGE)Z Test Conditions: VDD 28 Vdc, IDQ = 800 mA. 2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW. Figure 7. Gain, Efficiency, IM3, and ACPR vs. Output Power -30.0 -40.0 -50.0 35.00 (%), IM3 (dBc), ACPR (dBc)Z Figure 6. IMD vs. Tone Spacing AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 20.00 50.0 14.00 30.0 20.0 GAIN 12.00 10.0 10.00 0.0 8.00 -10.0 IRL 6.00 -20.0 IM3 4.00 2.00 ACPR 0.00 2100 2110 2120 2130 2140 2150 2160 2170 -30.0 -40.0 -50.0 2180 FREQUENCY (MHz)Z Test Conditions: VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA. 2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW. Figure 8. Broadband Performance +5 F1 F2 -0 -5 -10 -15 -20 -25 -30 IM3 IM3 -35 -40 ACPR ACPR -45 CENTER 2.140 GHz SPAN 50 MHz Test Conditions: VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA. 2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW. Figure 9. Spectral Plot IM3 (dBc), ACPR (dBc)Z 16.00 GAIN (dB)Z 40.0 (%), IRL (dB), 18.00 AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 8.00 15.00 AM TO AM (power gain [dB]) PGS (dB)Z 14.00 13.00 0.00 -4.00 AM TO PM (PHASE [degrees]) 12.00 4.00 -8.00 11.00 -12.00 10.00 -16.00 9.00 15.0 20.0 25.0 30.0 35.0 PIN (dBm)Z Test Conditions: VDD 28 Vdc, f0 = 2140 MHz, IDQ = 800 mA. CW input. Figure 10. AM-AM and AM-PM Characteristics 40.0 -20.00 45.0 PHASE (degrees)Z 16.00 AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR21090EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 PEAK DEVICES AGR21090XU M-AGR21090U YYWWLL YYWWLL XXXXX ZZZZZZZ ZZZZZZZ 3 3 2 2 AGR21090EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR21090XF M-AGR21090F YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ 1 3 3 2 2 Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. The last two letters of the part number denote wafer technology and package type. YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.