AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized,
laterally diffused, metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code-division multiple access (W-CDMA), and single
and multicarrier class AB wireless base station power
amplifier applications.
Figure 1. Available Packages
Features
Typical performance for 2 carrier3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adja-
cent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1– 10 MHz and
F2 + 10 MHz. Typical P/A ratio of 8.5 dBat 0.01%
(probability) CCDF:
— Output power:19 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –36 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 90 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functionaloperation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure toabsolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly,and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibilitylimits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damagefrom elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR21090EU (unflanged) AGR21090EF (flanged)
Parameter Sym Value Unit
Thermal Resistance,
Junction to Case:
AGR21090EU
AGR21090EF
RıJC
RıJC
0.7
0.7
°C/W
°C/W
Parameter Sym Value Unit
Drain-source Voltage VDSS65 Vdc
Gate-source Voltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR21090EU
AGR21090EF
PD
PD
250
250
W
W
Derate Above 25 ˇC:
AGR21090EU
AGR21090EF
—
—
1.4
1.4
W/°C
W/°C
CW RF Input Power
(VDS =31V)
—30 W
Operating Junction Tempera-
ture
TJ200 °C
Storage Temperature Range TSTG –65, 150 °C
AGR21090E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
PEAK Devices
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21090E
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz.
VDD = 28 Vdc, IDQ = 800 mA, and POUT = 19 W average.
Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V.
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID= 100 µA) V(BR)DSS 65 —— Vdc
Gate-source Leakage Current (VGS = 5 V, VDS =0V) IGSS ——3 µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS =0V) IDSS ——9 µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID= 1 A) GFS —6.4 —S
Gate Threshold Voltage (VDS =10V, ID= 300 µA) VGS(TH) 2.8 3.4 4.8 Vdc
Gate Quiescent Voltage (VDS = 28 V, ID= 800 mA) VGS(Q) 3.0 3.7 4.6 Vdc
Drain-source On-voltage (VGS =10V, ID= 1 A) VDS(ON) —0.11 —Vdc
Parameter Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS —2.1 —pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain* GPS 14.0 14.5 —dB
Drain Efficiency* η24 26 —%
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
IM3 —–33 –32 dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR —–36 –35 dBc
Input Return Loss* IRL —–12 –9 dB
Power Output, 1 dB Compression Point
(VDD = 28 V, fC= 2140.0 MHz)
P1dB 85 93 —W
Output Mismatch Stress
(VDD = 28 V, POUT = 90 W (CW), IDQ = 800 mA, fC= 2140.0 MHz
VSWR = 10:1; [all phase angles])
ψNo degradation in output power.
300
150
(in Supplied Test Fixture)
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21090E
A. Schematic
Parts List:
�Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.;
Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.;
Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in.
�ATC® chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X.
�Sprague®tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 µF, 35 V.
�Kemet® 1206 size chip capacitor: C10, C16: 0.1 µF C1206104K5RAC7800.
�Murata®0805 size chip capacitor: C9, C15: 0.01 µF GRM40X7R103K100AL.
�Johanson Giga-Trim®variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL.
�1206 size chip capacitor: C4, C8, C14: 22000 pF.
�1206 size chip resistor: R2 4.7 Ω, R3 1.02 kΩ, R4 560 kΩ.
�Fair-Rite®ferrite bead: FB1 2743019447.
�Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR21090E Test Circuit
DUT
R2
C4
R4
R3
+
C5 C3
+
C2
FB1
Z6
Z1 C1 Z2 Z3 Z4 Z5
Z10 Z11 Z12 Z13
C9C8C7
Z7 C11C10
RF INPUT
VGG
VDD
RF
C6
C18
OUTPUT
+
1
3
2PINS:
1. DRAIN
2. GATE
3. SOURCE
Z14Z9
C15C14C13
Z8
C17C16
+
C19
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21090E
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZSΩ
(Complex Source Impedance)
ZLΩ
(Complex Optimum Load Impedance)
2110 (f1) 2.52 – j4.60 3.10 – j3.11
2140 (f2) 2.46 – j4.42 3.01 – j3.05
2170 (f3) 2.37 – j4.25 2.94 – j2.99
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
I
S
S
I
O
N
C
O
E
F
F
I
C
I
E
N
T
I
N
D
E
G
R
E
E
S
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
I
C
I
E
N
T
I
N
D
E
G
R
E
E
S
Ð
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
<
Ð
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
<
Ð
I
N
D
U
C
T
C
A
P
A
C
I
T
I
V
E
R
E
A
C
T
A
N
C
E
C
O
M
P
O
N
E
N
T
(
-
j
X
/
Z
o
)
,
O
R
I
N
D
U
C
T
I
V
E
S
U
S
C
E
P
T
A
N
C
E
(
-
j
B
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3 f1
ZL
f3 f1
Z0 = 5 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
Test Conditions:
VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
Figure 5. IMD3 vs. Output Power and IDQ
11.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
15.50
16.00
16.50
1.00 10.00 100.00
POUT (W) PEPZ
GPS (dB) S
IDQ = 500 mA IDQ = 650 mA IDQ = 800 mA
IDQ = 950 mA
IDQ = 1100 mA
-70.00
-65.00
-60.00
-55.00
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
1.00 10.00 100.00 1000.00
POUT (W) PEPZ
IMD3 (dBc)Z
IDQ = 500 mA
IDQ = 650 mA
IDQ = 950 mA
IDQ = 1100 mA
IDQ = 800 mA
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21090E
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 Vdc, f0 = 2140 MHz, POUT = 90 W PEP.
Two-tone measurement, 10 MHz tone spacing.
Figure 6. IMD vs. Tone Spacing
Test Conditions:
VDD 28 Vdc, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 7. Gain, Efficiency, IM3, and ACPR vs. Output Power
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.1 110 100
TWO-TONE SPACING (MHz)Z
IMD (dBc)Z
IM7
IM5
IM3
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
5.00 10.00 15.00 20.00 25.00 30.00 35.00
POUT (W-AVERAGE)Z
GAIN (dB)Z
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
10.0
20.0
30.0
40.0
50.0
Ƨ (%), IM3 (dBc), ACPR (dBc)Z
Ƨ
GAIN
IM3 ACPR
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 8. Broadband Performance
Test Conditions:
VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 9. Spectral Plot
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
2100 2110 2120 2130 2140 2150 2160 2170 2180
FREQUENCY (MHz)Z
GAIN (dB)Z
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
10.0
20.0
30.0
40.0
50.0
Ƨ (%), IRL (dB),
IM3 (dBc), ACPR (dBc)Z
Ƨ
GAIN
IRL
IM3
ACPR
IM
3
IM3
ACPR
CPR
CENTER 2.140 GHz SPAN 50 MHz
-45
-40
-35
-30
-25
-20
-15
-10
-5
-0
+5
F
2
F1
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21090E
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 Vdc, f0 = 2140 MHz, IDQ = 800 mA.
CW input.
Figure 10. AM-AM and AM-PM Characteristics
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
15.0 20.0 25.0 30.0 35.0 40.0 45.0
PIN (dBm)Z
PGS (dB)Z
-20.00
-16.00
-12.00
-8.00
-4.00
0.00
4.00
8.00
PHASE (degrees)Z
AM TO AM
(power gain [dB])
AM TO PM
(PHASE [degrees])
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR21090EU
AGR21090EF
Label Notes:
�M before the part number denotes model program. X before the part number denotes engineering prototype.
�The last two letters of the part number denote wafer technology and package type.
�YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
�ZZZZZZZ = seven-digit assembly lot number on production parts.
�ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
22
3
M-AGR21090U
YYWWLL
ZZZZZZZ
1
3
1
PEAK DEVICES
AGR21090XU
YYWWLL XXXXX
ZZZZZZZ
M-AGR21090F
2
ZZZZZZZ
YYWWLL
1
3
2
3
1
PEAK DEVICES
AGR21090XF
YYWWLL XXXXX
ZZZZZZZ