IHW30N90R
Soft Switching Series q
Power Semiconductors 1 Rev. 2.2 Nov 08
Reverse Conducting IGBT with monolithic body diode
Features:
• 1.5V typical saturation voltage of IGBT
• Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
Applications:
• Microwave Oven
• Soft Switching Applications for ZCS
Type VCE I
C VCE(sat),Tj=25°C Tj,max Marking Package
IHW30N90R 900V 30A 1.5V 175°CH30R90 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 900 V
DC collector current
TC = 25°C
TC = 100°C
IC
60
30
Pulsed collector current, tp limited by Tjmax ICpuls 90
Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C - 90
Diode forward current
TC = 25°C
TC = 100°C
IF
60
30
Diode pulsed current, tp limited by Tjmax IFpuls 90
A
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
VGE ±20
±25
V
Power dissipation, TC = 25°C Ptot 454 W
Operating junction temperature Tj -40...+175
°C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1 J-STD-020 and JESD-022
G
C
E
PG-TO-247-3
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IHW30N90R
Soft Switching Series q
Power Semiconductors 2 Rev. 2.2 Nov 08
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.33
Diode thermal resistance,
junction – case
RthJCD 0.33
Thermal resistance,
junction – ambient
RthJA 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.5mA
900 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=30A
Tj=25°C
Tj=150°C
Tj=175°C
-
-
-
1.5
1.6
1.7
1.7
-
-
Diode forward voltage
VF VGE=0V, IF=30A
Tj=25°C
Tj=150°C
Tj=175°C
-
-
-
1.4
1.4
1.45
1.6
-
-
Gate-emitter threshold voltage VGE(th) IC=700μA,VCE=VGE 5.1 5.8 6.4
V
Zero gate voltage collector current
ICES VCE=900V,
VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
5
2500
μA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
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IHW30N90R
Soft Switching Series q
Power Semiconductors 3 Rev. 2.2 Nov 08
Dynamic Characteristic
Input capacitance Ciss - 2889 -
Output capacitance Coss - 83 -
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 79 -
pF
Gate charge QGate VCC=720V, IC=30A
VGE=15V
- 200 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 13 - nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. Typ. Max.
Unit
IGBT Characteristic
Turn-off delay time td(off) - 511 -
Fall time tf - 24 -
Turn-on energy Eon - - -
Turn-off energy Eoff - 1.46 -
Total switching energy Ets
Tj=25°C
VCC=600V,
IC=30A,
VGE=0/15V,
RG= 15Ω - 1.46 -
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
IGBT Characteristic
Turn-off delay time td(off) - 594 -
Fall time tf - 46 -
Turn-on energy Eon - - -
Turn-off energy Eoff - 2.1 -
Total switching energy Ets
Tj=175°C
VCC=600V,
IC=30A,
VGE=0/15V,
RG= 15Ω - 2.1 -
mJ
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IHW30N90R
Soft Switching Series q
Power Semiconductors 4 Rev. 2.2 Nov 08
IC, COLLECTOR CURRENT
100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
80A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
1A
10
A
DC
10µs
tp=1µs
20µs
200µs
1ms
50µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤175°C;VGE=15V)
Ptot, DISSIPATED POWER
25°C 50°C 75°C 100°C 125°C 150°C
0W
50W
100W
150W
200W
250W
300W
350W
400W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
40A
50A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Ic
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IHW30N90R
Soft Switching Series q
Power Semiconductors 5 Rev. 2.2 Nov 08
IC, COLLECTOR CURRENT
0.0V 0.5V 1.0V 1.5V 2.0V 2.5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
VGE=20V
IC, COLLECTOR CURRENT
0.0V 0.5V 1.0V 1.5V 2.0V 2.5V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C) Figure 6. Typical output characteristic
(Tj = 175°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
10A
20A
30A
40A
50A
60A
25°C
TJ=175°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
IC=30A
IC=60A
IC=15A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V) Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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IHW30N90R
Soft Switching Series q
Power Semiconductors 6 Rev. 2.2 Nov 08
t, SWITCHING TIMES
0A 10A 20A 30A 40A 50A
100ns
1000ns
tf
td(off)
t, SWITCHING TIMES
20Ω 30Ω 40Ω
10ns
100ns
1000ns
tf
td(off)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
100ns
1000ns
tf
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
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IHW30N90R
Soft Switching Series q
Power Semiconductors 7 Rev. 2.2 Nov 08
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A 50A
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
Eoff
E, SWITCHING ENERGY LOSSES
20Ω 30Ω 40Ω
0.0mJ
1.0mJ
2.0mJ
3.0mJ Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
Eoff
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
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IHW30N90R
Soft Switching Series q
Power Semiconductors 8 Rev. 2.2 Nov 08
VGE, GATE-EMITTER VOLTAGE
0nC 50nC 100nC 150nC 200nC 250nC
0V
5V
10V
720V
180V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical gate charge
(IC=30 A)
Figure 17. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 18. IGBT transient thermal
resistance
(D = tp / T)
Figure 19. Typical Diode transient th ermal
impedance as a function of pulse width
(D=tP/T)
R,(K/W)
τ
, (s)
0.0842 6.67*10-2
0.1202 9.59*10-3
0.0877 7.33*10-4
0.0385 8.56*10-5
C1=
τ
1/R1
R1R2
C2=
τ
2
/
R2
R,(K/W)
τ
, (s)
0.0395 1.10*10-1
0.1559 1.43*10-2
0.1075 8.67*10-4
0.0275 1.09*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2
/
R2
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IHW30N90R
Soft Switching Series q
Power Semiconductors 9 Rev. 2.2 Nov 08
IF, FORWARD CURRENT
0.0V 0.5V 1.0V 1.5V 2.0V
0A
10A
20A
30A
40A
50A
175°C
TJ=25°C
VF, FORWARD VOLTAGE
50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
30A
15A
IF=60A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 20. Typical diode forward current as
a function of forward voltage
Figure 21. Typical diode forward voltage
as a function of junction temperature
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IHW30N90R
Soft Switching Series q
Power Semiconductors 10 Rev. 2.2 Nov 08
5.44
0.55
6.04
5.49
1.68
3.68
4.17
20.82
16.25
15.70
1.05
3.50
19.80
13.10
3
MIN
1.90
4.90
2.27
1.07
1.85
1.90
0.238
0.216
0.066
0.145
0.164
0.075
0.820
0.640
0.618
0.022
0.193
0.089
0.042
0.073
0.041
0.075
0.138
0.780
0.516
0.68
6.30
6.00
17.65
2.60
5.10
14.15
3.70
21.10
16.03
20.31
1.35
4.47
2.41
5.16
2.53
1.33
2.11
MAX
2.16
0.027
0.214
3
0.248
0.236
0.695
0.557
0.102
0.201
0.831
0.631
0.053
0.146
0.799
0.176
MIN MAX
0.095
0.203
0.099
0.052
0.083
0.085
0
7.5mm
55
0
17-12-2007
03
Z8B00003327
2.87
2.87
0.113
0.113
3.38
3.13
0.133
0.123
M
M
PG-TO247-3
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IHW30N90R
Soft Switching Series q
Power Semiconductors 11 Rev. 2.2 Nov 08
Figure A. Definition of switching times
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,
v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
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IHW30N90R
Soft Switching Series q
Power Semiconductors 12 Rev. 2.2 Nov 08
Published by
Infineon Technologies AG
81726 Munich, Germany
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