1
Radiation Hardened High Frequency Half Bridge
Drivers
IS-2100ARH, IS-2100AEH
The Radiation Hardened IS-2100ARH, IS-2100AEH are high
frequency, 130V Half Bridge N-Channel MOSFET Driver ICs,
which are functionally similar to industry standard 2110 types.
The low-side and high-side gate drivers are independently
controlled. This gives the user maximum flexibility in
dead-time selection and driver protocol.
In addition, the devices have on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a set
or reset pulse is generated to correct the high-side latch. This
feature protects the high-side latch from single event upsets
(SEUs).
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for the IS-2100ARH,
IS-2100AEH are contained in SMD 5962-99536. A “hotlink” is
also provided on our website for downloading.
Features
• Electrically Screened to DLA SMD # 5962-99536
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Maximum Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad(SI)
- DI RSG Process Provides Latch-up Immunity
- SEU Rating . . . . . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm2
- Vertical Device Architecture Reduces Sensitivity to Low
Dose Rates
• Bootstrap Supply Max Voltage to 150V
• Drives 1000pF Load at 1MHz with Rise and Fall Times of
30ns (Typ)
• 1.5A (Typ) Peak Output Current
• Independent Inputs for Non-Half Bridge Topologies
• Low DC Power Consumption. . . . . . . . . . . . . . . . . 60mW (Typ)
•Operates with V
DD = VCC Over 12V to 20V Range
• Low-side Supply Undervoltage Protection
Applications
• High Frequency Switch-Mode Power Supplies
• Drivers for Inductive Loads
•DC Motor Drivers
Pin Configuration
IS-2100ARH, IS-2100AEH
FLATPACK (CDFP4-F16)
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERSIL MKT.
NUMBER
TEMP. RANGE
(°C)
5962F9953602V9A IS0-2100ARH-Q -55 to +125
5962F9953602VXC IS9-2100ARH-Q -55 to +125
5962F9953602QXC IS9-2100ARH-8 -55 to +125
IS9-2100ARH/Proto IS9-2100ARH/Proto -55 to +125
5962F9953603VXC IS9-2100AEH-Q -55 to +125
5962F9953603V9A IS0-2100AEH-Q -55 to +125
LO
COM
VCC
NC
NC
VS
VB
HO
2
3
4
5
6
7
8
116
15
14
13
12
11
10
9
NC
VSS
LIN
SD
HIN
VDD
NC
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2002, 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
August 28, 2012
FN9037.2
IS-2100ARH, IS-2100AEH
2
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN9037.2
August 28, 2012
For additional products, see www.intersil.com/product_tree
Die Characteristics
DIE DIMENSIONS:
4820μm x 3300μm (190 mils x 130 mils)
Thickness: 483μm ±25.4μm (19 mils ±1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
Top Metallization:
Type: ALSiCu
Thickness: 16.0kÅ ±2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
542
Metallization Mask Layout
IS-2100ARH, IS-2100AEH
SD (13)
LIN (14)
VSS (15)
COM (2)
VCC (3)
HIN (12)
VDD (11)
HO (8)
VB (7)
VS (6)
LO (1)
