FZT849
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A
*7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
*Ptot =3 Watts
PARTMARKING DETAILS - FZT849
COMPLEMENTARY TYPE - FZT949
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6V
Peak Pulse Current ICM 20 A
Continuous Collector Current IC7A
Power Dissipation at Tamb
=25°C Ptot 3W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT849
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 80 120 V IC
=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CER 80 120 V IC=1µA, RB ≤1kΩ
Collector-Emitter Breakdown
Voltage
V(BR)CEO 30 40 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 68 V
IE
=100µA
Collector Cut-Off Current ICBO 50
1
nA
µA
VCB
=70V
VCB
=70V, Tamb
=100°C
Collector Cut-Off Current ICER
R ≤1kΩ50
1
nA
µA
VCB
=70V
VCB
=70V, Tamb
=100°C
Emitter Cut-Off Current IEBO 10 nA VEB
=6V
Collector-Emitter Saturation
Voltage
VCE(sat) 35
67
168
50
110
215
350
mV
mV
mV
mV
IC
=0.5A, IB
=20mA*
IC
=1A, IB
=20mA*
IC
=2A, IB
=20mA*
IC
=6.5A, IB
=300mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.2 V IC
=6.5A, IB
=300mA
Base-Emitter Turn-On Voltage VBE(on) 1.13 V IC=6.5A, VCE=1V*
Static Forward
Current Transfer Ratio
hFE 100
100
100
30
200
200
150
65
300
IC
=10mA, VCE=1V
IC
=1A, VCE
=1V*
IC
=7A, VCE
=1V*
IC
=20A, VCE
=2V*
Transition Frequency fT100 MHz IC
=100mA, VCE=10V
f=50MHz
Output Capacitance Cobo 75 pF VCB
=10V, f=1MHz*
Switching Times ton
toff
45
630
ns
ns
IC
=1A, IB1=100mA
IB2=100mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
C
C
E
B
3 - 258 3 - 257
FZT849
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A
*7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
*Ptot =3 Watts
PARTMARKING DETAILS - FZT849
COMPLEMENTARY TYPE - FZT949
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6V
Peak Pulse Current ICM 20 A
Continuous Collector Current IC7A
Power Dissipation at Tamb
=25°C Ptot 3W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
FZT849
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 80 120 V IC
=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CER 80 120 V IC=1µA, RB ≤1kΩ
Collector-Emitter Breakdown
Voltage
V(BR)CEO 30 40 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 68 V
IE
=100µA
Collector Cut-Off Current ICBO 50
1
nA
µA
VCB
=70V
VCB
=70V, Tamb
=100°C
Collector Cut-Off Current ICER
R ≤1kΩ50
1
nA
µA
VCB
=70V
VCB
=70V, Tamb
=100°C
Emitter Cut-Off Current IEBO 10 nA VEB
=6V
Collector-Emitter Saturation
Voltage
VCE(sat) 35
67
168
50
110
215
350
mV
mV
mV
mV
IC
=0.5A, IB
=20mA*
IC
=1A, IB
=20mA*
IC
=2A, IB
=20mA*
IC
=6.5A, IB
=300mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.2 V IC
=6.5A, IB
=300mA
Base-Emitter Turn-On Voltage VBE(on) 1.13 V IC=6.5A, VCE=1V*
Static Forward
Current Transfer Ratio
hFE 100
100
100
30
200
200
150
65
300
IC
=10mA, VCE=1V
IC
=1A, VCE
=1V*
IC
=7A, VCE
=1V*
IC
=20A, VCE
=2V*
Transition Frequency fT100 MHz IC
=100mA, VCE=10V
f=50MHz
Output Capacitance Cobo 75 pF VCB
=10V, f=1MHz*
Switching Times ton
toff
45
630
ns
ns
IC
=1A, IB1=100mA
IB2=100mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
C
C
E
B
3 - 258 3 - 257
0.01 0.1 1 10
0.4
0
0.8
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
I
C
- Collector Current (Amps)
VBE(sat) v IC
I- Collector Current (Amps)
V
CE
- Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.1
1
10
100 Single Pulse Test at T
amb
=25°C
0.01 0.1 110
1.0
0.5
2.0
1.5
I
C
- Collector Current (Amps)
VBE(on) v IC
V- (Volts)
V
CE
=1V
V- (Volts)
I
C
/I
B
=10
0.6
0.2
0.01 0.1 110
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
I
C
- Collector Current (Amps)
hFE v IC
h- Normalised Gain
300
200
100
h- Typical Gain
D.C.
1s
100ms
10ms
1.0ms
0.1ms
V
CE
=5V
100
V
CE
=1V
1000.001
I
C
/I
B
=50
0.01 0.1 110
1.0
0.5
2.0
1.5
1000.001
I
C
/I
B
=50
I
C
/I
B
=10
100
FZT849
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