NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
TO66 Type Package
Description:
The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package
designed for high−speed switching and linear amplifier applications for high−voltage operational am-
plifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
DTO66 Type Package
DCollector−Emitter Sustaining Voltage:
NTE38: VCEO(sus) = 350V @ IC = 200mA
NTE175: VCEO(sus) = 300V @ IC = 200mA
DSecond Breakdown Collector Current:
NTE38 IS/b = 875mA @ VCE = 40V
NTE175 IS/b = 350mA @ VCE = 100V
DUsable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
NTE38 350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector−Base Voltage, VCB
NTE38 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter−Base Voltage, VEB 6Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD 35W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C 0.2W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, Tstg −65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, RΘJC 5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage
NTE38 VCEO(sus) IC = 200mA, IB = 0 350 − − V
NTE175 300 − − V
Collector−Emitter Sustaining Voltage
NTE38 Only VCEX(sus) IC = 200mA, VBE = −1.5V, L = 10mH 400 − − V
VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω375 − − V
Emitter−Base Breakdown Voltage
NTE38 Only VEBO IE = 0.5mA, IC = 0 6− − V
Collector Cutoff Current ICEO VCE = 150V, IB = 0 − − 5 mA
Collector Cutoff Current
NTE38 ICEV VCE = 250V, VBE(off) = 1.5V − − 0.5 mA
VCE = 250V, VBE(off) = 1.5V, TC = +100°C− − 5.0 mA
VCE = 315V, VBE(off) = 1.5V − − 0.5 mA
VCE = 315V, VBE(off) = 1.5V, TC = +100°C− − 5.0 mA
VCE = 360V, VBE(off) = 1.5V − − 0.5 mA
VCE = 360V, VBE(off) = 1.5V, TC = +100°C− − 5.0 mA
NTE175 ICEX VCE = 450V, VBE(off) = 1.5V − − 1.0 mA
VCE = 300V, VBE(off) = 1.5V, TC = +150°C− − 3.0 mA
Emitter Cutoff Current IEBO VEB = 6V, IC = 0 − − 0.5 mA
ON Characteristics (Note 2)
DC Current Gain
NTE38 hFE IC = 1A, VCE = 4V 10 −100
NTE175 IC = 0.1A, VCE = 10V 40 − −
IC = 1A, VCE = 2V 8−80
IC = 1A, VCE = 10V 25 −100
Collector−Emitter Saturation Voltage
NTE38 VCE(sat) IC = 1A, IB = 125mA − − 2.0 V
NTE175 − − 0.75 V
Base−Emitter Saturation Voltage
NTE38 VBE(sat) IC = 1A, IB = 125mA − − 1.4
V
NTE175 IC = 1A, IB = 100mA − − 1.4 V
Base−Emitter ON Voltage
NTE175 Only VBE(on) IC = 1A, VCE = 10V − − 1.4 V
Dynamic Characteristics
Current Gain −Bandwidth Product
NTE38 fTIC = 200mA, VCE = 10V, ftest = 5MHz,
Note 3
20 − − MHz
NTE175 15 − − MHz
Output Capacitance (NTE175 Only) Cob VCB = 10V, IE = 0, f = 1MHz − − 120 pF
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ftest
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Second Breakdown
Second Breakdown Collector Current
NTE38 IS/b t = 1s (Non−Repetitive), VCE = 40V 875 − − mA
NTE175 VCE = 100V 350 − − mA
Switching Characteristics
NTE38
Rise Time trVCC = 200V, IC = 1A
IB1 = IB2 = 125mA
− − 0.6 μs
Storage Time ts− − 2.5 μs
Fall Time tf− − 0.6 μs
NTE175
Rise Time trVCC = 200V,
IC = 1A
IB1 = 100mA, RL = 200Ω− − 3.0 μs
Storage Time tsIB1 = IB2 = 100mA − − 4.0 μs
Fall Time tf− − 3.0 μs
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.200
(5.08)
EmitterCollector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
