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December 2013
Thermal Characteristics
FQP4N90C / FQPF4N90C
N-Channel QFET® MOSFET
900 V, 4.0 A, 4.2 Ω
Description
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
1
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V,
ID = 2.0 A
•Low Gate Charge (Typ. 17 nC)
•Low Crss (Typ. 5.6 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
*
Symbol Parameter FQP9N90C FQPF9N90CT Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.89 2.66 °C/W
RθCSThermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W
TO-220
GDSTO-220F
GDS
G
S
D
Drain current limited by maximum junction temperature.
Symbol Parameter FQP4N90C FQPF4N90C Unit
VDSS Drain-Source Volt age 900 V
IDDrain Current - Continuous (TC = 25°C) *44 A
- Continuous (TC = 100°C) 2.3 2.3 * A
IDM Drain Current - Pulsed (Note 1) 16 16 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 570 mJ
IAR Avalanche Current (Note 1) 4A
EAR Repetitive Avalanche Energy (Note 1) 14 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25°C) 140 47 W
- Derate above 25°C 1.12 0.38 W/°C
TJ, TSTG Operating and Storage Temperat ure Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.300 °C
Package Marking and Ordering Information
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
2
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted.
Part Number Top Mark Package Reel Size Tape Width Quantity
FQP4N90C
FQP4N90C TO-220 N/A N/A 50 units
Packing Method
Tube
TO-220F Tube N/A N/A 50 units
FQPF4N90C
FQPF4N90C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2.
L = 67 mH, IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 4 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min.Typ.Max.Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, ID = 250 µA900 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 1.05 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA
VDS = 720 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 2 A -- 3.5 4.2 Ω
gFS Forward Transconductance VDS = 50 V, ID = 2 A -- 5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 740 960 pF
Coss Output Capacitance -- 65 85 pF
Crss Reverse Transfer Capacit ance -- 5.6 7. 3 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 450 V, ID = 4 A,
RG = 25 Ω
(Note 4)
-- 25 60 ns
trTurn-On Rise Time -- 50 110 ns
td(off) Turn-Off Dela y Time -- 40 90 ns
tfTurn-Off Fall Time -- 3 5 80 ns
QgTotal Gate Charge VDS = 720 V, ID = 4 A,
VGS = 10 V (Note 4)
-- 17 22 nC
Qgs Gate-Source Charge -- 4.5 -- nC
Qgd Gate-Drain Charge -- 7.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 4 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 4 A,
dIF / dt = 100 A/µs -- 450 -- ns
Qrr Reverse Recovery Charge -- 3.5 - - µC
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
3
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
!
200 86
2
4
6
8
10
VGS = 20V
VGS = 10V
※ Note : TJ = 25℃
RDS(ON) [Ω],
Drain-Source On-R esistance
ID, Drain Current [A]
10-1 0101
0
200
400
600
800
1000
1200 Ciss = Cgs + Cgd (Cds = shorted)
=Coss Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
10
VDS, Drain-Source Voltage [V]
0 5 15 20
0
2
4
6
8
10
12
VDS = 450V
VDS = 180V
VDS = 720V
※ Note : I D = 4A
VGS, Gate-Source Voltage [V]
10
QG, To tal G a te C ha rg e [n C]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
IDR , Reverse Drain Current [A ]
VSD, Source-Drain voltage [V]
24 810
10-1
100
101
6
VGS, Gate-Source Voltage [V]
150oC
25oC-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
ID, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10-1 101
10-2
10-1
100
101 VGS
Top : 15.0 V
10 .0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ No tes :
1. 250μs Pulse Test
2. TC = 25℃
ID, Drain C u rrent [A]
100
VDS, Drain-S o urce Vo lta g e [V]
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
4
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)
25 50 75 100 125 150
0
1
2
3
4
5
ID, Drain Current [A]
TC, Case Tem p erature [℃
]
100101102103
10-2
10-1
100
101
102
10 µs
100 ms
DC
10 ms
1 ms100 µs
Ope ration in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, D rain C urrent [A]
VDS, Drain-Source Voltage [V]
100101102103
10-2
10-1
100
101
102
100 ms
DC
10 ms
1 ms 100 µs
Operation in This Area
is Limited by R DS(on)
※ N o tes :
1. TC = 25 oC
2. TJ = 150 oC
3. Sin gle P uls e
ID, Drain C urrent [A]
VDS, D rain-Source V oltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP4N90C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF4N90C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※
N o te s :
1 . V GS = 0 V
2 . ID = 250 μA
BV DSS , (Norm alized)
D rain-Source Breakdow n Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ N o te s :
1. VGS = 10 V
2. ID = 2.0 A
RDS(ON) , (Norm alized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
5
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
Typical Characteristics (Continued)
ZJC(t), Thermal Response [oC/W] ZJC(t), Thermal Response [oC/W]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ No te s :
1 . Z θJC(t) = 0 .89 ℃/W Ma x.
2 . Du ty Fa c to r, D = t1/t2
3 . T JM - T C = M
PD Z* θJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
10-5 10-4 100101
10-2
10-1
100
※ No te s :
1 . Z θJC(t) = 2 .6 6 ℃/W Ma x .
2 . D u ty F a c tor , D = t1/t2
T 3 . T JM - C P = DM * Z θJC(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
10-3 10-2 10-1
t1, S q u are W a ve P u ls e D u ra tio n [sec]
t1, S quare Wave Pulse Duration [sec]
Figure 11-1. Transient Thermal Response Curve for FQP4N90C
Figure 11-2. Transient Thermal Response Curve for FQPF4N90C
t1
PDM
t2
t1
PDM
t2
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
6
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
7
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
www.fairchildsemi.com
8
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
9
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2003 Fairchild Semiconductor Corporation
FQP4N90C / FQPF4N90C Rev. C1
www.fairchildsemi.com
10
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Rev. I66
tm
®
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
www.onsemi.com
1
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