NFVA25012NP2T
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8
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Min Typ Max Unit
BOOTSTRAP DIODE PART (Tj as specified)
VF Forward Voltage IF = 1.0 A, TJ = 25°C−2.2 −V
trr Reverse−Recovery Time IF = 1.0 A, dIF / dt = 50 A/ms, TJ = 25°C−80 −ns
CONTROL PART (Tj = 25°C unless otherwise noted)
IQDDH Quiescent VDD Supply
Current
VDD(UH,VH,WH) = 15 V,
IN(UH,VH,WH) = 0 V
VDD(UH) − COM(H),
VDD(VH) − COM(H),
VDD(WH) − COM(H)
− − 0.15 mA
IQDDL VDD(L) = 15 V, IN(UL,VL, WL) = 0 V VDD(L) − COM(L) − − 4.80 mA
IPDDH Operating VDD Supply
Current
VDD(UH,VH,WH) = 15 V,
fPWM = 20 kHz, Duty = 50%,
Applied to one PWM Signal Input
for High−Side
VDD(UH) − COM(H),
VDD(VH) − COM(H),
VDD(WH) − COM(H)
− − 0.30 mA
IPDDL VDD(L) = 15V, fPWM = 20 kHz,
Duty = 50%, Applied to one PWM
Signal Input for Low−Side
VDD(L) − COM(L) − − 15.5 mA
IQBS Quiescent VBS Supply
Current
VBS = 15 V, IN(UH,VH,WH) = 0 V VB(U) − VS(U),
VB(V) − VS(V),
VB(W) − VS(W)
− − 0.30 mA
IPBS Operating VBS Supply
Current
VDD = VBS = 15 V, fPWM = 20 kHz,
Duty = 50%, Applied to one PWM
Signal Input for High−Side
VB(U) − VS(U),
VB(V) − VS(V),
VB(W) − VS(W)
− − 12.0 mA
VFOH Fault Output Voltage VDD = 15 V, VSC = 0 V, VFO Circuit: 4.7 kW to 5 V Pull−up 4.5 − − V
VFOL VDD = 15 V, VSC = 1 V, VFO Circuit: 4.7 kW to 5 V Pull−up − − 0.5 V
ISEN Sensing Current of Each
Sense IGBT
VDD = 15 V, VIN = 5 V, RSC = 0 W,
No Connection of Shunt Resistor
at NU,V,W Terminal
IC = 50 A −43 −mA
VSC(ref) Short Circuit Trip Level VDD = 15 V (Note 8) CSC − COM(L) 0.43 0.50 0.57 V
ISC Short Circuit Current Level
for Trip
RSC = 13 W (±1%), No Connection of Shunt Resistor
at NU,V,W Terminal (Note 8)
−75 −A
UVDDD Supply Circuit
Under−Voltage Protection
Detection Level 10.3 −12.8 V
UVDDR Reset Level 10.8 −13.3 V
UVBSD Detection Level 9.5 −12.0 V
UVBSR Reset Level 10.0 −12.5 V
tFOD Fault−Out Pulse Width CFOD = Open (Note 9) 50 − − ms
CFOD = 2.2 nF 1.7 − − ms
VIN(ON) ON Threshold Voltage Applied between IN(UH,VH,WH) − COM(H),
IN(UL,VL,WL) − COM(L)
− − 2.6 V
VIN(OFF) OFF Threshold Voltage 0.8 − − V
RTH Resistance of Thermistor at TTH = 25°C See Figure 6
(Note 10)
−47 −kW
at TTH = 100°C−2.9 −kW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Short−circuit current protection functions only at the low−sides because the sense current is divided from main current at low−side IGBTs.
Inserting the shunt resistor for monitoring the phase current at NU, NV, NW terminal, the trip level of the short−circuit current is changed.
9. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation:
tFOD = 0.8 x 106 x CFOD [s].
10.TTH is the temperature of thermistor itself. To know case temperature (TC), conduct experiments considering the application.