FHBCX53-16 - Fenghua Advanced Technology

广东肇庆风华新谷微电子有限公司

广东省肇庆市风华路 18 号风华电子工业城三号楼一楼

TEL:0758-2865088 2865091 FAX:0758-2849749

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SOT-89 PNP medium power transistor 三极管

1base 2collector 3emitter

FHBCX53

Fearture 特点:

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCX 54 … BCX 56 (NPN)

ABSOLUTE MAXIMUM RATINGS 额定值

Characteristic 特性参数 Symbol 符号 Rating 额定值 Unit 单位

Collector-Emitter Voltage 集电极-发射极电压 V CEO -80 Vdc

Collector-Base Voltage 集电极-基极电压 V CBO -100 Vdc

Emitter-Base Voltage 发射极-基极电压 V EBO -5 Vdc

Collector Current(DC)集电极电流-直流 IC -1 Adc

Peak Collector Current 集电极峰值电流 ICM -1.5 Adc

Peak Base Current 基极电流 IBM -100 mA dc

Collector Power Dissipation 集电极耗散功率 PC 1 W

Junction Temperature 结温 Tj 150

℃

Storage Temperature Range 储存温度 Tstg -55 to +150 ℃

Note:1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.

DEVICE MARKING 打标

hFE FHBCX53 -16=AL (100～250)

ELECTRICAL CHARACTERISTICS 电特性(TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃)

Characteristic 特性参数 Symbol

符号 Test Condition

测试条件

Min

最小

值

Type

典型

值

Max

最大

值

Unit

单位

VCB=-30V,IE=0 - - -100 nA

Collector Cutoff Current

集电极截止电流 ICBO VCB=-30V,IE=0,

Tj=150℃ - - -20

μA

Emitter Cutoff Current

发射极截止电流 IEBO VEB=-4V,IC=0 - - -20 nA

VCE=-2V,IC=-5mA 25 - -

VCE=-2V,IC=-150mA 100 160 250

DC Current Gain 直流电流增益 hFE VCE=-2V,IC=-500mA 25 - - -

Collector-Emitter Saturation

Voltage 基极-发射极饱和压降 VCE(sat) I

C=-500mA,IB=-50mA - - -0.5 V

Base-Emitter Voltage

集电极-发射极电压 VBE IC = -500mA; VCE =-2 V - - -1.0 V

Transition Frequency 特征频率 fT IC =50 mA: VCE = -10 V;

f = 20 MHz - 125 - MHz