TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
High Power DC - 18GHz SPDT FET Switch TGS2306-EPU
Key Features and Performance
• DC - 18 GHz Frequency Range
• 29 dBm Input P1dB @ VC = -5V
• > 30 dB Isolation
• <1 nsec switching speed
• Control Voltage Application from
Either Side of MMIC
• -3V or -5V Control Voltage
• 0.5µm pHEMT 3MI Technology
• Chip Dimensions:
0.83 x 1.11 x 0.10 mm
(0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
VC1 = 0V; VC2 = -5V
-10
-8
-6
-4
-2
0
02468101214161820
Frequency (GHz)
Insertion Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
Isolation, Return Loss (dB)
S21
S11
S22
S13
Desription
The TriQuint TGS2306-EPU is a GaAs
single-pole, double-throw (SPDT) FET
monolithic switch designed to operate
over the DC to 18GHz frequency range.
This switch not only maintains a high
isolation loss and a low insertion loss
across a wide bandwidth, but also has
very low power consumption and high
power handling of 29dBm or greater
input P1dB at VC = 5V. These
advantages, along with the small size of
the chip, make the TGS2306-EPU ideal
for use in high-speed radar and
communication applications.