CLF1G0035S-100,112 - NXP Semiconductors

1. Product profile

1.1 General description

CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation

GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.

[1] Pulsed RF; tp=50s; =1%.

[1] 2-Tone CW; f=1MHz.

CLF1G0035S-100

Broadband RF power GaN HEMT

Rev. 4 — 6 November 2014 Objective data sheet

Table 1. CW and pulsed RF application information

Typical RF performance at Tcase = 25



C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo

board.

Test sign al f PLGpD

(MHz) (W) (dB) (%)

1-To ne CW 500 100 14.2 61.6

1000 100 11.2 47.9

1500 100 10.8 46.4

2000 100 11.7 53.3

1-Tone pulsed [1] 500 100 15.5 67.4

1000 100 14 52.9

1500 100 14.3 53.7

2000 100 13.9 59.5

Table 2. 2-Tone CW application information

Typi cal 2-Tone performance at Tcase = 25



C; IDq = 500 mA; VDS = 50 V in a class-AB broadband

demo board.

Test sign al f PL(PEP) IMD3

(MHz) (W) (dBc)

2-Tone CW [1] 300 20 45.5

1000 20 39.3

1500 20 44

2000 20 46.4

Objective data sheet Rev. 4 — 6 November 2014 2 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

1.2 Features and benefits

Frequency of operation is from DC to 3.5 GHz

100 W general purpose broadband RF Power GaN HEMT

Excellent ruggedness (VSWR 10 : 1)

High voltage operation (5 0 V)

Thermally enhanced package

1.3 Applications

Commercial wireless infrastructure (cellular, WiMAX)

Industrial, scientific, medical

Radar

Jammers

Broadband general purpose amplifier

EMC testing

Public mobile radios

Defense applic at ion

2. Pinning information

[1] Connected to flange.

3. Ordering information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1drain

2gate

3source [1]

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Table 4. Ordering information

Type number Package

Name Description Version

CLF1G0035S-100 - earless ceramic package; 2 leads SOT467B

Objective data sheet Rev. 4 — 6 November 2014 3 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

4. Limiting values

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator.

5. Thermal characteristics

[1] Tj is measured via IR scan with case temperature of 85 C and power dissipation of 113 W.

6. Characteristics

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 150 V

VGS gate-source voltage 8+3 V

IGF forward gate current external RG = 5 -36mA

Tstg storage temperature 65 +150 C

Tjjunctio n te mp era t ure measured via IR scan [1] -250C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resist ance from junction to case Tj = 200 C[1] 1.02 K/W

Table 7. DC Characteristics

Tcase = 25



C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage VGS =7 V; IDS = 24 mA 150 - - V

VGS(th) gate-source threshold voltage VDS = 0.1 V; IDS = 24 mA 2.4 21.3 V

IDSX drain cut-off current VDS =10V; V

GS =3 V - 17.5 - A

gfs forward transconductance VDS = 10 V; VGS =0 V - 4.0 - S

Table 8. RF Characteristics

Test signal: pulsed RF; f = 3 GHz; tp= 100





= 10 %; RF performance at VDS =50V;

IDq = 330 mA; Tcase =25



C; unless otherwise specified in a class-AB production circuit.

Symbol Parameter Conditions Min Typ Max Unit

Ddrain efficiency PL= 100 W 46 53 - %

Gppower gain PL= 100 W 7.8 12 - dB

RLin input return loss PL= 100 W - 52.5 dB

Pdroop(pulse) pulse droop power PL= 100 W - 0.04 - dB

trrise time PL= 100 W - 5 - ns

tffall time PL= 100 W - 5 - ns

Objective data sheet Rev. 4 — 6 November 2014 4 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

7. Application information

7.1 Demo circuit

Fig 1. The broadband amplifier (200 MHz to 2100 MHz) demo circuit outline

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Table 9. List of componen ts

See Figure 1 and Figure 2.

Component Description Value Remarks

A1 GaN bias module v2 - NXP

C1 multilayer ceramic chip capacitor 3.3 pF AT C 600F or Passive Plus 0805N

C3 multilayer ceramic chip capacitor 1.5 pF AT C 600F or Passive Plus 0805N

C4 multilayer ceramic chip capacitor 100 pF AT C 600F or Passive Plus 0805N

C5, C6 multilayer ceramic chip capacitor 1.8 pF ATC 800B or Passive Plus 1111N

C7 multilayer ceramic chip capacitor 39 pF ATC 800B or Passive Plus 1111N

C9 multilayer ceramic chip capacitor 10 nF ATC 600F or Passive Plus 0805N

C10 multilayer ceramic chip capacitor 10 nF generic

C11 multilayer ceramic chip capacitor 22 pF generic

C12 multilayer ceramic chip capacitor 1 nF generic

C13 multilayer ceramic chip capacitor 100 nF generic

C20 multilayer ceramic chip capacitor 1 nF ATC 700B

C21 multilayer cerami c chip capacitor 100 pF ATC 700B

Objective data sheet Rev. 4 — 6 November 2014 5 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

C22, C26 multilayer ceramic chip capacitor 10 nF generic

C23 multilayer ceramic chip capacitor 10 F TDK C5750X7S2A106M

C25 multilayer ceramic chip capacitor 1 F generic

C27 electrolytic capacitor 470 F P anasonic EEE-TK1J471AM

E1, E2 drain voltage connection -

J1, P1, P2, P3, P4 1 row, 4-way vertical DC connector header -

J2 RF in connector -

J3 RF out connector -

L2 inductor 14 nH 3 turns, 18 AWG,

inner diameter = 2.5 mm

L3 ferrite bead - Fair-Rite 2743019447

Q1 transistor - NXP CLF1G0035-100

Q2 transistor - NXP BC857B

Q3 transistor - NXP PSMN8R2-80YS

R1 resistor 20.0 generic

R2 resistor 10.0 kgeneric

R3 resistor 200 ATC LR12010T02 00J

R4 resistor 0.005 SUSUMU RL7520WT-R005-F

R21, R22 resistor 0 generic

T1 semi-rigid coax 18 mm Micro-Coax UT-062C-18

T2 semi-rigid coax 16 mm Micro-Coax UT-062C-18

Z1, Z2, Z3, Z4, Z5,

Z6, Z7, Z8 microstrip li n es -

Table 9. List of componen ts …continued

See Figure 1 and Figure 2.

Component Description Value Remarks

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Objective data sheet Rev. 4 — 6 November 2014 6 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

See Table 9 for a list of components.

Fig 2. The broadband amplifier (200 MHz to 2100 MHz) demo circuit schematic

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Objective data sheet Rev. 4 — 6 November 2014 7 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

7.2 Application test results

[1] Pulsed RF; tp=50s; =1%.

[1] 2-Tone CW; f=1MHz.

Table 10. CW and pulsed RF application informatio n

Typical RF performance at Tcase = 25



C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo

board.

Test sign al f PLGpD

(MHz) (W) (dB) (%)

1-To ne CW 500 100 14.2 61.6

1000 100 11.2 47.9

1500 100 10.8 46.4

2000 100 11.7 53.3

1-Tone pulsed [1] 500 100 15.5 67.4

1000 100 14 52.9

1500 100 14.3 53.7

2000 100 13.9 59.5

Table 11. 2-Ton e CW app lication information

Typi cal 2-Tone performance at Tcase = 25



C; IDq = 500 mA; VDS = 50 V in a class-AB broadband

demo board.

Test sign al f PL(PEP) IMD3

(MHz) (W) (dBc)

2-Tone CW [1] 300 20 45.5

1000 20 39.3

1500 20 44

2000 20 46.4

Objective data sheet Rev. 4 — 6 November 2014 8 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

7.3 Graphical data

The following figures are measured in a broadband amplifier demo board circuit from

200 MHz to 2100 MHz.

7.3.1 1-Tone CW RF performance

VDS = 50 V; IDq = 300 mA; PL=100W. V

DS = 50 V; IDq = 300 mA.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

Fig 3. Power gain and drain efficiency as function of

frequency; typical values Fig 4. Power gain and drain efficiency as function

output power; typical values

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Objective data sheet Rev. 4 — 6 November 2014 9 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

7.3.2 1-Tone pulsed RF performance

VDS = 50 V; IDq = 300 mA; PL=100W; t

p=50s,

=1%. VDS = 50 V; IDq = 300 mA; tp=50s, =1%.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

Fig 5. Power gain and drain efficiency as function of

frequency; typical values Fig 6. Power gain and drain efficiency as function

output power; typical values

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Objective data sheet Rev. 4 — 6 November 2014 10 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

7.3.3 2-Tone CW performance

VDS = 50 V; IDq = 300 mA; f=1MHz.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

VDS = 50 V; IDq = 500 mA; f=1MHz.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

Fig 7. Third-order intermodulation distortion as a

function of peak envelope power load power;

typical valu e s

Fig 8. Third-order intermodulation distortion as a

function of peak envelope power load power;

typical values

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Objective data sheet Rev. 4 — 6 November 2014 11 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

7.4 Bias module

The bias module information for the GaN HEMT amplifier is described in application note

AN11130.

8. Test information

8.1 Ruggedness in class-AB operation

The CLF1G0035S-100 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =50V;

PL= 100 W, f = 3000 MHz.

8.2 Load pull impedance information

The measured load pull impedances are shown below. Impedance reference plane

defined at devic e leads. Measureme nts perfor m ed w ith NXP te st fixtu re s. Test

temperature set at 25 C with a pulsed CW signal; tp=100s; = 10 %; RF performance

at VDS =50V; I

Dq = 330 mA.

VDS = 50 V; IDq = 500 mA; PL(PEP) =20W.

(1) f=10 kHz

(2) f=30 kHz

(3) f = 100 kHz

(4) f = 300 kHz

(5) f=1 MHz

(6) f=3 MHz

Fig 9. Third-order intermodulation distortion as a function of frequency and tone

spacing; typical values

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Objective data sheet Rev. 4 — 6 November 2014 12 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

ZS is the measured source pull impedance presented to the device. ZL is the measured

load pull impeda nc e pr es en te d to the de vic e.

Table 12. Typical imped an ce

Typical values unless otherwise specified.

f ZSZL (maximum PL(M)) ZL (maximum D)

(MHz) () () ()

500 6 + 6.5j 5.8 + 1.9j 7.6 + 5j

1000 1.7 + 2j 6 + 0.7j 6.5 + 5.2j

2000 1.2  2.8j 4.5  0.5j 3.8 + 1.6j

2500 1  4.2j 4  1.2j 3 + 0j

3000 1.7  5.2j 3.8  2.5j 3.1  1.3j

3500 2.7  8.9j 4.2  4.8j 3.3  3.7j

Fig 10. Definition of tran si s t or imp e da nc e

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Objective data sheet Rev. 4 — 6 November 2014 13 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

8.3 Packaged S-parameter data

Table 13. S-parameter

Small signal; VDS = 50 V; IDq = 330 mA; ZS = ZL = 50



(MHz) S11 S21 S12 S22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

100 0.89132 156.66 34.068 94.493 0.012475 7.7032 0.52196 147.24

200 0.89073 168.26 17.043 82.662 0.012315 0.83012 0.53166 156.66

300 0.89427 172.3 11.153 74.641 0.011818 5.3714 0.55825 158.1

400 0.89924 174.48 8.1416 67.823 0.011142 8.4181 0.59137 158.32

500 0.90493 175.96 6.3028 61.71 0.010348 10.333 0.62678 158.56

600 0.91086 177.14 5.0617 56.145 0.009484 11.104 0.66181 159.08

700 0.91671 178.17 4.1699 51.054 0.008599 10.584 0.69485 159.87

800 0.92224 179.13 3.5016 46.389 0.007737 8.5461 0.72507 160.86

900 0.92735 179.94 2.9855 42.108 0.006948 4.7126 0.75217 161.98

1000 0.93196 179.04 2.578 38.172 0.006285 1.1721 0.77617 163.17

1100 0.93606 178.16 2.2506 34.546 0.005806 9.1609 0.79724 164.39

1200 0.93966 177.28 1.9837 31.195 0.005568 18.833 0.81567 165.61

1300 0.94281 176.4 1.7635 28.089 0.005606 29.182 0.83174 166.82

1400 0.94552 175.53 1.5801 25.2 0.005918 38.964 0.84575 168

1500 0.94785 174.66 1.4259 22.504 0.006469 47.302 0.85796 169.15

1600 0.94982 173.78 1.2952 19.978 0.00721 53.919 0.86862 170.26

1700 0.95148 172.9 1.1837 17.603 0.008097 58.951 0.87793 171.34

1800 0.95285 172.02 1.088 15.361 0.009097 62.687 0.88608 172.38

1900 0.95397 171.13 1.0053 13.239 0.010189 65.418 0.89322 173.38

2000 0.95484 170.23 0.93366 11.223 0.011359 67.384 0.89949 174.36

2100 0.9555 169.32 0.87121 9.2996 0.012601 68.77 0.905 175.31

2200 0.95595 168.39 0.81661 7.4599 0.013912 69.711 0.90983 176.23

2300 0.95622 167.44 0.76871 5.6942 0.015292 70.306 0.91408 177.14

2400 0.9563 166.48 0.7266 3.9939 0.016745 70.629 0.91781 178.02

2500 0.9562 165.49 0.68949 2.3514 0.018273 70.735 0.92108 178.88

2600 0.95593 164.48 0.65676 0.7596 0.019885 70.661 0.92394 179.72

2700 0.95549 163.44 0.62788 0.788 0.021586 70.439 0.92643 179.44

2800 0.95487 162.36 0.60239 2.2976 0.023385 70.091 0.92858 178.62

2900 0.95408 161.25 0.57994 3.775 0.025294 69.632 0.93042 177.81

3000 0.9531 160.1 0.56021 5.226 0.027321 69.075 0.93198 177

3100 0.95192 158.9 0.54294 6.656 0.029482 68.427 0.93328 176.2

3200 0.95053 157.65 0.52791 8.0708 0.03179 67.696 0.93433 175.4

3300 0.94892 156.35 0.51495 9.4758 0.034261 66.885 0.93514 174.6

3400 0.94706 154.98 0.5039 10.877 0.036915 65.995 0.93573 173.81

3500 0.94493 153.54 0.49464 12.28 0.039772 65.028 0.93611 173.01

3600 0.9425 152.02 0.48708 13.692 0.042855 63.98 0.93627 172.2

3700 0.93974 150.42 0.48113 15.12 0.046193 62.851 0.93622 171.4

Objective data sheet Rev. 4 — 6 November 2014 14 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

3800 0.93661 148.72 0.47676 16.57 0.049816 61.637 0.93596 170.58

3900 0.93304 146.91 0.47391 18.052 0.053758 60.331 0.93549 169.76

4000 0.92899 144.97 0.47258 19.574 0.05806 58.928 0.9348 168.93

4100 0.92439 142.9 0.47276 21.147 0.062766 57.42 0.93389 168.09

4200 0.91915 140.66 0.47446 22.781 0.067929 55.796 0.93276 167.24

4300 0.91317 138.25 0.47772 24.491 0.073607 54.046 0.93138 166.37

4400 0.90633 135.63 0.48257 26.289 0.079867 52.157 0.92976 165.49

4500 0.89849 132.78 0.48907 28.193 0.086783 50.112 0.9279 164.6

4600 0.88949 129.66 0.49729 30.221 0.094441 47.895 0.92577 163.69

4700 0.87914 126.23 0.50729 32.395 0.10293 45.484 0.92339 162.77

4800 0.8672 122.45 0.51914 34.739 0.11237 42.857 0.92076 161.83

4900 0.85343 118.25 0.53291 37.279 0.12284 39.988 0.91791 160.88

5000 0.83755 113.57 0.54862 40.045 0.13448 36.847 0.91488 159.92

5100 0.81926 108.32 0.56627 43.069 0.14738 33.402 0.91174 158.95

5200 0.79827 102.42 0.58578 46.386 0.16163 29.62 0.9086 157.98

5300 0.77437 95.758 0.60694 50.029 0.1773 25.468 0.90565 156.99

5400 0.74749 88.197 0.62942 54.032 0.19438 20.912 0.90312 156

5500 0.7178 79.599 0.65267 58.42 0.2128 15.928 0.90132 155

5600 0.68594 69.815 0.67591 63.21 0.23234 10.5 0.90063 153.96

5700 0.65314 58.706 0.69815 68.399 0.25267 4.6305 0.90147 152.86

5800 0.62143 46.181 0.71818 73.964 0.2733 1.6555 0.90421 151.66

5900 0.59357 32.261 0.73479 79.853 0.29362 8.3064 0.90909 150.31

6000 0.57266 17.159 0.7469 85.99 0.31299 15.244 0.9161 148.75

Table 13. S-parameter …continued

Small signal; VDS = 50 V; IDq = 330 mA; ZS = ZL = 50



(MHz) S11 S21 S12 S22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

Objective data sheet Rev. 4 — 6 November 2014 15 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

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Objective data sheet Rev. 4 — 6 November 2014 16 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

10. Handling information

10.1 ESD Sensitivity

[1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after

exposure to an ESD pulse of 1000 V.

11. Abbreviations

12. Revision history

Table 14. ESD sensitivity

ESD model Class

Human Body Model (HBM); According JEDEC standard JESD22-A114F 1B [1]

Table 15. Abbreviations

Acronym Description

AWG American Gauge Wire

CW Continuous Wave

EMC ElectroMagnetic Compatibility

ESD ElectroStatic Discharge

GaN Gallium Nitride

HEMT High Electron Mobility Transistor

MTF Median Time to Failure

VSWR Voltage Standing-Wave Ratio

WiMAX Worldwide Interoperability for Microwave Access

Table 16. Revision history

Document ID Release date Data sheet status Change notice Supersedes

CLF1G0035S-100 v.4 20141106 Objective data sheet - CLF1G0035-100_1G0035S-100

v.3

Modifications: •The document now describes only the earless version of this product:

CLF1G0035S-100.

CLF1G0035-100_1G0035S-100

v.3 20140926 Objective data sheet - CLF1G0035-100_1G0035S-100

v.2

CLF1G0035-100_1G0035S-100

v.2 20130129 Objective data sheet - CLF1G0035-100_1G0035S-100

v.1

CLF1G0035-100_1G0035S-100

v.1 20120615 Objective data sheet - -

Objective data sheet Rev. 4 — 6 November 2014 17 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect , incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Objective data sheet Rev. 4 — 6 November 2014 18 of 19

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifica tions, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specificat ions.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors CLF1G0035S-100

Broadband RF power GaN HEMT

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 November 2014

Document identifier: CLF1G0035S-100

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 2

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.2 Application test results . . . . . . . . . . . . . . . . . . . 7

7.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8

7.3.1 1-Tone CW RF performance. . . . . . . . . . . . . . . 8

7.3.2 1-To ne pulsed RF performance . . . . . . . . . . . . 9

7.3.3 2-Tone CW performance . . . . . . . . . . . . . . . . 10

7.4 Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 11

8 Te st information. . . . . . . . . . . . . . . . . . . . . . . . 11

8.1 Ruggedness in class-AB operation . . . . . . . . 11

8.2 Load pull impedance information . . . . . . . . . . 11

8.3 Packaged S-parameter data. . . . . . . . . . . . . . 13

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

10 Handling information. . . . . . . . . . . . . . . . . . . . 16

10.1 ESD Sensitivity. . . . . . . . . . . . . . . . . . . . . . . . 16

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

14 Contact information. . . . . . . . . . . . . . . . . . . . . 18

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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