N-Channel MOSFET 400V, 3.4 A, 1.6 General Description Features The MDI5N40 / MDD5N40 use advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 400V ID = 3.4A RDS(ON) 1.6 MDI5N40 is suitable device for SMPS, HID and general purpose applications. @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast MDI5N40 N-channel MOSFET 400V MDI5N40/MDD5N40 D GDS I-PAK (TO-251) G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS 30 V o Pulsed Drain Current 3.4 A 2.15 A 13.6 A 45 0.36 W o W/ C 4.5 V/ns EAR 4.5 mJ EAS 170 mJ TJ, Tstg -55~150 TC=25 C Continuous Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation Peak Diode Recovery dv/dt PD o Derate above 25 C (3) Dv/dt (4) Repetitive Pulse Avalanche Energy (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Dec. 2011. Version 1.5 (1) (1) 1 Symbol Rating RJA 110 RJC 2.75 Unit o C/W MagnaChip Semiconductor Ltd. Part Number Temp. Range MDI5N40TH -55~150 C Package Packing RoHS Status o TO-251(I-PAK) Tube Halogen Free MDD5N40RH -55~150 C o D-PAK Reel Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 400 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 3.0 - 5.0 IDSS VDS = 400V, VGS = 0V - - 1 A VGS = 30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS RDS(ON) VGS = 10V, ID = 1.7A gfs VDS = 30V, ID = 1.7A - V - 100 nA 1.2 1.6 2.0 - S MDI5N40 N-channel MOSFET 400V Ordering Information Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs VDS = 320V, ID = 3.4A, VGS = 10V (3) - 9 - 2.5 Gate-Drain Charge Qgd - 4 Input Capacitance Ciss - 290 Reverse Transfer Capacitance Crss - 3 Output Capacitance Coss - 46 Turn-On td(on) - 12 tr - 25 - 20 - 30 - 3.4 Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 200V, ID = 3.4A, (3) RG = 25 tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source IS Diode Forward Current Source-Drain Diode Forward VSD Voltage Body Diode Reverse Recovery trr Time Body Diode Reverse Recovery Qrr Charge IS = 3.4A, VGS = 0V - nC pF ns - A 1.4 V - 200 ns - 1.0 C IF = 3.4A, di/dt = 100A/s Note : 1. Pulse width is based on R JC & R JA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 3.4A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C 4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25, Starting TJ=25C Dec. 2011. Version 1.5 2 MagnaChip Semiconductor Ltd. Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V ID,Drain Current [A] 8 7 3.2 Notes 1. 250 Pulse Test 2. TC=25 3.0 2.8 2.6 RDS(ON) [ ] 9 6 5 4 2.4 2.2 VGS=10.0V 2.0 VGS=20V 1.8 3 1.6 2 1.4 1.2 1 1.0 5 10 15 20 0 5 VDS,Drain-Source Voltage [V] ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 Notes : 1. VGS = 10 V 2. ID = 1.7 A 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 10 MDI5N40 N-channel MOSFET 400V 3.4 10 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 Notes : 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 200 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 10 150 25 1 4 6 25 150 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec. 2011. Version 1.5 Notes : 1. VGS = 0 V 2. 250us pulse 10 IDR Reverse Drain Current [A] ID [A] * Notes ; 1. VDS=30V Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDI5N40 N-channel MOSFET 400V 600 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C oss Note : ID = 5A 80V 500 VGS, Gate-Source Voltage [V] 200V 320V Capacitance [pF] 8 6 4 400 C iss 300 Notes ; 1. VGS = 0 V 2. f = 1 MHz 200 C rss 2 100 0 0 0 2 4 6 1 8 Fig.7 Gate Charge Characteristics 10 Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 5 1 4 10 s ID, Drain Current [A] ID, Drain Current [A] 10 100 s 10 0 1 ms DC 10 ms 10 100 ms -1 -2 -1 10 3 2 1 Single Pulse TJ=Max rated TC=25 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 0 10 1 0 25 2 10 50 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 5000 single Pulse RthJC = 2.75/W TC = 25 D=0.5 4000 0 0.2 0.1 Power (W) Z JC(t), Thermal Response 10 0.05 -1 0.02 10 0.01 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=2.75/W single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec. 2011. Version 1.5 2000 1000 -2 10 3000 4 MagnaChip Semiconductor Ltd. TO-251 (I-PAK) Dimensions are in millimeters, unless otherwise specified Dec. 2011. Version 1.5 5 MDI5N40 N-channel MOSFET 400V Physical Dimension MagnaChip Semiconductor Ltd. D-PAK, 3L Dimensions are in millimeters, unless otherwise specified Dec. 2011. Version 1.5 6 MDI5N40 N-channel MOSFET 400V Physical Dimension MagnaChip Semiconductor Ltd. MDI5N40 N-channel MOSFET 400V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec. 2011. Version 1.5 7 MagnaChip Semiconductor Ltd.