Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
1
MDI5N40 N-channel MOSFET 400V
I-PAK
(TO-251)
G D S
Absolute Maximum Ratings (Ta = 25
o
C)
Characteristics
Symbol Rating Unit
Drain-Source Voltage VDSS 400 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current TC=25oC ID 3.4 A
TC=100oC 2.15 A
Pulsed Drain Current(1) IDM 13.6 A
Power Dissipation TC=25oC PD 45 W
W/ oC
Derate above 25 oC 0.36
Peak Diode Recovery dv/dt(3) Dv/dt 4.5 V/ns
Repetitive Pulse Avalanche Energy(4) EAR 4.5 mJ
Single Pulse Avalanche Energy(4) EAS 170 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(1) RθJA 110 oC/W
Thermal Resistance, Junction-to-Case(1) RθJC 2.75
MDI5N40/MDD5N40
N-Channel MOSFET 400V, 3.4 A, 1.6Ω
ΩΩ
Ω
D
G
S
General Description
The MDI5N40 / MDD5N40 use advanced
Magnachip’s MOSFET Technology, which provides
low on-state resistance, high switching performance
and excellent quality.
MDI5N40 is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 400V
ID = 3.4A @VGS = 10V
RDS(ON) ≤ 1.6Ω @VGS = 10V
Applications
Power Supply
PFC
Ballast
Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
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MDI5N40 N-channel MOSFET 400V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDI5N40TH -55~150oC TO-251(I-PAK) Tube Halogen Free
MDD5N40RH -55~150oC D-PAK Reel Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Symbol
Test Condition Min
Typ Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 400 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 400V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 1.7A 1.2 1.6 Ω
Forward Transconductance gfs VDS = 30V, ID = 1.7A - 2.0 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = 320V, ID = 3.4A, VGS = 10V(3)
- 9
nC
Gate-Source Charge Qgs - 2.5
Gate-Drain Charge Qgd - 4
Input Capacitance Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
- 290
pF Reverse Transfer Capacitance Crss - 3
Output Capacitance Coss - 46
Turn-On Delay Time td(on)
VGS = 10V, VDS = 200V, ID = 3.4A,
RG = 25Ω(3)
- 12
ns
Rise Time tr - 25
Turn-Off Delay Time td(off) - 20
Fall Time tf - 30
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current IS - 3.4 - A
Source-Drain Diode Forward
Voltage VSD IS = 3.4A, VGS = 0V - 1.4 V
Body Diode Reverse Recovery
Time trr
IF = 3.4A, di/dt = 100A/µs
- 200 ns
Body Diode Reverse Recovery
Charge Qrr - 1.0 µC
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤3.4A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
3
MDI5N40 N-channel MOSFET 400V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
5 10 15 20
1
2
3
4
5
6
7
8
9
10
Notes
1. 250㎲
㎲㎲
㎲ Pulse Test
2. T
C
=25℃
℃℃
℃
V
gs
=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
ID,Drain Current [A]
V
DS
,Drain-Source Voltage [V]
-50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
0 5 10
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
V
GS
=10.0V
V
GS
=20V
RDS(ON) [Ω ]
ID
,Drain Current [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
25℃
150℃
Notes :※
1. VGS = 0 V
2. 250us pulse
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
4 6 8
1
10
* Notes ;
1. V
DS
=30V
150℃
℃℃
℃
25℃
℃℃
℃
ID [A]
V
GS
[V]
-50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
※※
※
1. VGS = 10 V
2. ID = 1.7 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
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MDI5N40 N-channel MOSFET 400V
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation
10-1 100101102
10-2
10-1
100
101
102
10 µs
100 µs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
℃℃
℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
1000
2000
3000
4000
5000
single Pulse
RthJC = 2.75 /W℃
℃℃
℃
TC = 25℃
℃℃
℃
Power (W)
Pulse Width (s)
25 50 75 100 125 150
0
1
2
3
4
5
ID, Drain Current [A]
TC, Case Temperature [ ]℃
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM
* Zθ JC
* Rθ JC
(t) + TC
RΘ JC
=2.75 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
0 2 4 6 8
0
2
4
6
8
10
80V
200V
320V
Note : I※
※※
※D = 5A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
1 10
0
100
200
300
400
500
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
5
MDI5N40 N-channel MOSFET 400V
Physical Dimension
TO-251 (I-PAK)
Dimensions are in millimeters, unless otherwise specified
Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
6
MDI5N40 N-channel MOSFET 400V
Physical Dimension
D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified
Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.
7
MDI5N40 N-channel MOSFET 400V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
