AUTOMOTIVE GRADE AUIRLR3636 HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) ID (Silicon Limited) ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number AUIRLR3636 G D-Pak S D-Pak AUIRLR3636 G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type 60V 5.4m 6.8m 99A 50A typ. max. S Source Orderable Part Number AUIRLR3636 AUIRLR3636TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 99 ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation 70 50 396 143 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.95 16 170 See Fig. 14, 15, 22a, 22b 22 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- --- 1.05 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-4 AUIRLR3636 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs RG(Int) Gate Threshold Voltage Forward Trans conductance Internal Gate Resistance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 60 --- --- --- 1.0 31 --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.07 --- V/C Reference to 25C, ID = 5mA 5.4 6.8 VGS = 10V, ID = 50A m 6.6 8.3 VGS = 4.5V, ID = 50A --- 2.5 V VDS = VGS, ID = 100A --- --- S VDS = 25V, ID = 50A 0.6 --- --- 20 VDS = 60V, VGS = 0V A --- 250 VDS = 60V,VGS = 0V,TJ =125C --- 100 VGS = 16V nA --- -100 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Qsync td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss eff. (ER) Effective Output Capacitance (Energy Related) Coss eff. (TR) Effective Output Capacitance (Time Related) Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time --- --- --- --- --- --- --- --- --- --- --- --- --- 33 11 15 18 45 216 43 69 3779 332 163 437 636 49 --- --- --- --- --- --- --- --- --- --- --- --- Min. Typ. Max. Units --- --- 99 --- --- 396 --- --- --- --- --- --- --- 27 32 31 43 2.1 1.3 --- --- --- --- --- ID = 50A VDS = 30V nC VGS = 4.5V VDD = 39V ID = 50A ns RG = 7.5 VGS = 4.5V VGS = 0V VDS = 50V pF = 1.0MHz VGS = 0V, VDS = 0V to 48V VGS = 0V, VDS = 0V to 48V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 50A,VGS = 0V TJ = 25C ns VR = 51V, TJ = 125C I F = 50A TJ = 25C nC di/dt = 100A/s TJ = 125C A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 50A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25C, L = 0.136mH, RG = 25, IAS = 50A, VGS =10V. Part not recommended for use above this value. ISD 50A, di/dt 1109A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Ris measured at TJ approximately 90C. 2 2015-11-4 AUIRLR3636 1000 1000 VGS 15V 10V 4.5V 4.0V 3.5V 3.3V 3.0V 2.7V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 2.7V 1 100 BOTTOM VGS 15V 10V 4.5V 4.0V 3.5V 3.3V 3.0V 2.7V 2.7V 10 60s PULSE WIDTH Tj = 175C 60s PULSE WIDTH Tj = 25C 1 0.1 0.1 1 10 0.1 100 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 1000 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.5 100 T J = 175C T J = 25C 10 1 VDS = 25V 60s PULSE WIDTH 0.1 1 2 3 4 5 6 ID = 50A VGS = 10V 2.0 1.5 1.0 0.5 7 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 10000 C iss 1000 C oss C rss 5.0 ID= 50A 4.5 VGS, Gate-to-Source Voltage (V) 100000 C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 1 VDS = 48V VDS= 30V VDS = 12V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-11-4 AUIRLR3636 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R (on) DS T J = 175C 100 T J = 25C 10 1 100sec 100 LIMITED BY PACKAGE 10 1msec 10msec 1 VGS = 0V 0.1 0.1 0.1 0.4 0.7 1 1.3 1.6 1.9 0.1 VSD , Source-to-Drain Voltage (V) Limited By Package ID, Drain Current (A) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 100 80 Id = 5mA 75 70 65 60 55 50 -60 -40 -20 0 20 40 60 80 100 120 140160 180 175 T J , Temperature ( C ) TC , Case Temperature (C) Fig. 9 Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 800 EAS , Single Pulse Avalanche Energy (mJ) 0.8 0.6 Energy (J) 10 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 110 100 1 VDS , Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 0.4 0.2 0.0 ID TOP 5.69A 10.64A BOTTOM 50A 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 VDS, Drain-to-Source Voltage (V) Fig. 11 Typical COSS Stored Energy 4 DC Tc = 25C Tj = 175C Single Pulse 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-11-4 AUIRLR3636 Thermal Response ( Z thJC ) C/W 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 J R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 4 C 4 Ri (C/W) i (sec) 0.02028 0.000011 0.29406 0.000158 0.49179 0.001393 0.24336 0.00725 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 R4 R4 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current Vs. Pulse width EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 50A 150 100 50 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) Starting T J , Junction Temperature (C) Fig 15. Maximum Avalanche Energy Vs. Temperature 5 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 2015-11-4 AUIRLR3636 14 IF = 20A V R = 51V 12 2.5 TJ = 25C TJ = 125C 10 2.0 IRRM (A) VGS(th) , Gate threshold Voltage (V) 3.0 1.5 ID = 100A ID = 250A ID = 1.0mA 1.0 8 6 4 ID = 1.0A 0.5 2 0.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 T J , Temperature ( C ) 600 800 1000 diF /dt (A/s) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 350 16 14 12 10 IF = 30A V R = 51V 300 IF = 20A VR = 51V TJ = 25C TJ = 125C 250 TJ = 25C TJ = 125C QRR (nC) IRRM (A) 400 8 200 150 6 100 4 50 2 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/s) diF /dt (A/s) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt QRR (nC) 350 300 IF = 30A VR = 51V 250 TJ = 25C TJ = 125C 200 150 100 50 0 0 200 400 600 800 1000 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2015-11-4 AUIRLR3636 Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V L VDS tp DRIVER D.U.T RG IAS 20V tp + V - DD 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit A I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2015-11-4 AUIRLR3636 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AULR3636 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-4 AUIRLR3636 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-4 AUIRLR3636 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M4 (+/- 600V) AEC-Q101-002 Class H1C (+/- 2000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/18/2014 4/9/2014 11/4/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated package outline on page 8. Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6. Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-11-4