SEMICONDUCTORS
SUMMARY
Schottky Diode VR= 40V; IF= 0.52A; IR= 10 A
DESCRIPTION
This compact SOD323 packaged Schottky diode offers users an excellent
performance combination comprising high current operation, extremely low
leakage and low forward voltage ensuring suitability for applications requiring
efficient operation at higher temperatures (above 85⬚C) see Operational efficiency
chart on page 4.
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency and power levels
PCB area savings
FEATURES
·Low equivalent on resistance
·Extremely low leakage (10␮A @30V)
·High current capability (IF= 0.52A)
·Low VF, fast switching Schottky
·SOD323 package
·ZLLS400 complements low temperature equivalent ZHCS400
·Package thermally rated to 150⬚C
APPLICATIONS
·DC - DC converters
·Cellular / mobile phones
·Charging circuits
·Motor control
DEVICE MARKING
40
ZLLS400
ISSUE 5 - JUNE 2004
1
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SOD323
DEVICE REEL
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZLLS400TA 7 8mm embossed 3000 units
ZLLS400TC 13 8mm embossed 10,000 units
ORDERING INFORMATION
TOP VIEW
ZLLS400
SEMICONDUCTORS
ISSUE 5 - JUNE 2004
2
PARAMETER SYMBOL VALUE UNIT
Schottky diode
Continuous reverse voltage VR40 V
Forward current IF0.52 A
Peak repetitive forward current
Rectangular pulse duty cycle IFPK 0.85 A
Non repetitive forward current t=ⱕ100␮s
t=ⱕ10ms IFSM 12
2.5 A
A
Package
Power dissipation at Tamb=25⬚C
Single die continuous
Single die measured at t<5 secs PD330
390 mW
mW
Storage temperature range Tstg -55 to +150 ⬚C
Junction temperature Tj150 ⬚C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R⍜JA 379 °C/W
Junction to ambient (b) R⍜JA 317 °C/W
THERMAL RESISTANCE
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
ZLLS400
SEMICONDUCTORS
ISSUE 5 - JUNE 2004
3
TYPICAL CHARACTERISTICS
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will
benefit from using Zetex low VFZHCS series diodes.
ZLLS400
SEMICONDUCTORS
ISSUE 5 - JUNE 2004
4
SCHOTTKY DIODE CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Reverse breakdown voltage V(BR)R 40 V IR=200µA
Forward voltage VF305
335
395
445
550
620
710
405
360
390
450
500
630
710
800
mV
mV
mV
mV
mV
mV
mV
mV
IF=50mA*
IF=100mA*
IF=250mA*
IF=400mA*
IF=750mA*
IF=1A*
IF=1.5A*
IF=400mA*,Ta = 100⬚C
Reverse current IR6
370 10 ␮A
␮AVR=30V
VR=30V,Ta = 85⬚C
Diode capacitance CD15 pF f=1MHz,VR=30V
Reverse recovery time
Reverse recovery charge trr
Qrr
3
210 ns
pC Switched from
IF= 500mA to VR= 5.5V
Measured @ IR50mA
di /d t = 500mA/ ns
Rsource = 6⍀;Rload= 10⍀
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
*Measured under pulsed conditions. Pulse width = 300µS. Duty cycle 艋2%.
ZLLS400
SEMICONDUCTORS
ISSUE 5 - JUNE 2004
5
TYPICAL CHARACTERISTICS
ZLLS400
SEMICONDUCTORS
6
ISSUE 5 - JUNE 2004
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Package Outline
DIM Millimeters Inches
Min. Max. Min. Max.
A 0.91 1.16 0.036 0.046
B 0.0 0.1 0.0 0.004
D 0.33 0.4 0.013 0.016
E 0.127 0.2 0.005 0.008
F 1.52 1.77 0.060 0.070
G 1.11 1.37 0.044 0.054
H 2.46 2.71 0.097 0.107
Package Dimensions
Pad Layout