PD- 95675 IRLMS2002PbF HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated Lead-Free A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS(on) = 0.030 Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6TM package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 6.5 5.2 20 2.0 1.3 0.016 12 -55 to + 150 V W/C V C Max. Units 62.5 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 1/18/05 IRLMS2002PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 15 2.2 3.5 8.5 11 36 16 1310 150 36 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.030 VGS = 4.5V, ID = 6.5A 0.045 VGS = 2.5V, ID = 5.2A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 6.5A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, V GS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 22 ID = 6.5A 3.3 nC VDS = 10V 5.3 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- R G = 6.0 --- R D = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 2.0 20 --- --- --- --- 19 13 1.2 29 20 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRLMS2002PbF 100 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V 10 1.50V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 10 1.50V RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 C TJ = 150 C 10 V DS = 15V 20s PULSE WIDTH 2.5 3.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 2.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 1.5 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 3.5 ID = 5.3A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLMS2002PbF 2000 VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 10 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 1200 800 400 0 Coss Crss 1 10 VDS = 10V 8 6 4 2 0 100 ID = 6.5A 5.3A 0 4 8 12 16 20 24 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.2 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com 6.0 0.20 5.0 0.10 VGS(th) , Variace ( V ) ID , Drain Current (A) IRLMS2002PbF 4.0 3.0 2.0 Id = 250A -0.10 -0.20 -0.30 1.0 0.0 0.00 -0.40 25 50 75 100 125 TC , Case Temperature ( C) 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS ( on) , Drain-to-Source On Resistance ( ) IRLMS2002PbF RDS(on) , Drain-to -Source Voltage ( ) 0.040 0.035 0.030 0.025 Id = 5.3A 0.020 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 8.0 0.10 0.08 0.06 0.04 VGS= 2.5V VGS = 4.5V 0.02 0 10 20 30 ID, - Drain Current (A ) Fig 13. Typical On-Resistance Vs. Drain Current www.irf.com 40 IRLMS2002PbF Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) 2.80 (.111 ) 1.75 (.068 ) 1.50 (.060 ) -A- LEAD ASSIGNMENTS -B- 6 5 4 1 2 3 3.00 (.118 ) 2.60 (.103 ) 0.95 ( .0375 ) 6X 2X D D 6 5 RECOMMENDED FOOTPRINT 2X 0.95 (.0375 ) S 6X (1.06 (.042 ) 4 1 2 3 D D G 2.20 (.087 ) 0.50 (.019 ) 0.35 (.014 ) 6X 0.65 (.025 ) 0.15 (.006 ) M C A S B S O O 0 -10 1.30 (.051 ) 0.90 (.036 ) -C- 6X 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES 0.15 (.006 ) MAX. 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6TM P Micro6 (SOT23 6L) Part Marking Information W = (1-26) IF PRECEDE D BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WE EK PART NUMBER T OP LOT CODE YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 PART NUMBER CODE REF ERENCE: A= B= C= D= E= F= G= H= IRLMS1902 IRLMS1503 IRLMS6702 IRLMS5703 IRLMS6802 IRLMS4502 IRLMS2002 IRLMS6803 Note: A line above the work week (as s hown here) indicates Lead-Free. www.irf.com WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDE D BY A LETT ER YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z 7 IRLMS2002PbF Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/05 8 www.irf.com