GSBAT54W Schottky Barrier Diode Features + Low Turn-on Voltage Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOD-123 Absolute Maximum Ratings (TA=25C unless otherwise specified) Parameter Symbol Value DC blocking voltage VR 30 RMS reverse voltage VR(RMS) 21 Unit V Average rectified output current Io 100 mA Forward continuous current IF 200 mA Repetitive peak forward current IFRM 300 mA IFSM 600 mA Power dissipation Pd 500 mW Thermal resistance junction to ambient RJA 200 /W TJ 125 Forward surge current @t<1s Junction temperature -55 to +150 TSTG Storage temperature range Electrical Characteristics (TA=25C unless otherwise specified) Parameter Reverse breakdown voltage Forward voltage Conditions Symbol Min Typ Max Unit V (BR) IR=100A VF1 IF=0.1mA 240 mV VF2 IF=1.0mA 320 mV VF3 IF=10mA 400 mV VF4 IF=30mA 500 mV VF5 IF=100mA 1000 mV 2.0 uA 5.0 ns 10 pF Reverse current IR Reverse recovery time trr Capacitance between terminals CT V 30 VR=25V IF=10mA, IR=10mA to 1mA , RL=100 VR=1V,f=1MHz 1/2 GSBAT54W Schottky Barrier Diode Product Outline Dimensions Marking L9 www.goodarksemi.com 2/2 Doc.USGSBAT54WxUK3.0