GSBAT54W - GOOD-ARK ELECTRONICS

Parameter Symbol Value Unit

DC blocking voltage

RMS reverse voltage

VR(RMS)

21 V

Average rectified output current Io100 mA

Forward continuous current IF200 mA

Repetitive peak forward current IFRM 300 mA

Forward surge current @t<1s IFSM 600 mA

Power dissipation Pd 500 mW

Junction temperature TJ125 ℃

Storage temperature range TSTG -55 to +150 ℃

Parameter Symbol Conditions Min Typ Max Unit

Reverse breakdown voltage V (BR) I

R=100μA30 V

VF1 I

F=0.1mA 240 mV

VF2 I

F=1.0mA

320 mV

VF3 I

F=10mA

400

VF4 I

F=30mA

500

Forward voltage

VF5 I

F=100mA 1000 mV

Reverse current IR VR=25V

2.0 uA

Reverse recovery time trr

IF=10mA, IR=10mA to 1mA ,

RL=100Ω5.0

Capacitance between terminals CTVR=1V,f=1MHz 10 pF

Thermal resistance junction to ambient RθJA 200 ℃/W

SOD-123

■

Low Turn-on Voltage

■

Fast Switching

■

Ultra-Small Surface Mount Package

■

PN Junction Guard Ring for Transient and ESD Protection

Features

GSBAT54W

Schottky Barrier Diode

Absolute Maximum Ratings

(TA=25°C unless otherwise specified)

Electrical Characteristics

(TA=25°C unless otherwise specified)

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