SIEM fn Ss Preliminary data BUZ 100SL-4 SIPMOS Power Transistor D1 oo N.c. C4 61 o1 ag 02 4 wIHOa kN N nN * Quad-channel 02 0 fn s2 * Enhancement mode a ae Ee : si * Logic level 4 ta _3f os 1S : vpsosios * Avalanche-rated * dv/dt rated Type Vos lb Fipscon) Package Ordering Code BUZ 100SL-4 [55 V 7.4A 0.023 P-DSO-28 C67078-S....-.. Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active lb A Ty = 25 C 7.4 Pulsed drain current one channel active !Dpuls Ty = 25 C 29.6 Avalanche energy, single pulse Eas mJ Ip = 7.4 A, Vpp = 25 V, Rag = 25 2 L = 13.8 mH, 7; = 25 C 380 Reverse diode dv/dt dv/dt kV/us Is =7.4A, Vps = 40 V, die/dt = 200 A/us Tmax = 175 C 6 Gate source voltage Ves +14 V Power dissipation ,one channel active Prot W Ty = 25C 2.4 Operating temperature Tj -55...4175 |C Storage temperature T tg -55 ...+.175 IEC climatic category, DIN IEC 68-1 55 / 175/56S| EM _ BUZ 100SL-4 oe ee ie Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. |typ. |max. Thermal resistance, junction - soldering point 1) Rings |- - tod |K/W Thermal resistance, junction - ambient 2) AihyA {> - 62.5 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70um thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at 7j = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage Vas = 9 V, Ip = 0.25 mA, 7) = 25 C ViBR)DSS 55 Gate threshold voltage Vas= Vps, lb = 130 UA Vesith) 1.2 1.6 Zero gate voltage drain current Vos = 55 V, Vag = OV, 7) =-40 C Vos = 55 V, Vag = OV, 7) = 25 C Vos = 55 V, Vag = OV, 7] = 150 C loss 0.1 0.1 100 Gate-source leakage current Vag = 20 V, Vps = 0 V lass 10 100 nA Drain-Source on-resistance Veg =5V, Ip=7.4A Fpsvon) 0.019 0.023SIEM Preliminary data BUZ 100SL-4 Electrical Characteristics, at 7) = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance Vos2 2+ !p * Rosonymax, /p = 7-4 A Os 20 Input capacitance Vag =O0V, Vos = 25 V, f= 1 MHz Cigg 2130 2660 Output capacitance Vag =O0V, Vos = 25 V, f= 1 MHz Coss 600 750 Reverse transfer capacitance Vas =0V, Vos = 25 V, f= 1 MHz Cig 320 400 pF Turn-on delay time Vop = 30 V, Veg =5V, Ip=7.4A Ag = 2.3 Q fg(on) 37 55 Rise time Vop = 30 V, Veg =5V, Ip=7.4A Ag =2.30 67 100 Turn-off delay time Vop = 30 V, Veg =5V, Ip=7.4A Ag = 2.3 Q 91 140 Fall time Vop = 30 V, Vag =5V, Ip=7.4A Ag =2.32 42 65 ns Gate charge at threshold Vop = 40 V;, ID2 0.1 A, Ves =0to1V 4.5 Gate charge at 5.0 V Vop =40V, lb =7.4A, Vas =0to5V 98 86 Gate charge total Vop = 40 V;, lb =7.4 A, Ves =0to 10 V 93 140 nc Gate plateau voltage Vop = 40 V, Dp=Z7.4A Viplateau) 2.92SIEM] Prelimi BUZ 100SL-4 reliminary data Electrical Characteristics, at 7) = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current | /s A Ty = 25 C - - 7.4 Inverse diode direct current, pulsed Is Ta = 25 C - - 29.6 Inverse diode forward voltage Vsp V Veg = OV, lp =14.8A - 0.9 1.6 Reverse recovery time tr ns Va = 30 V, Ip=lg dig/dt = 100 A/us - 75 115 Reverse recovery charge Qy UC Vp = 30 V, IF=lg dif/dt = 100 A/us - 0.21 0.315S| E M : _ BUZ 100SL-4 al ol omniniiniiel Preliminary data Power dissipation Drain current Pot = (Ta) lp = F(T p) parameter: Veg 25 V 7.5 A 6.5 I 6.0 5.5 5.0 45 4.0 Prot 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 Tp TpSIEM: hy Preliminary data BUZ 100SL-4 Typ. output characteristics lb = f(Yps) parameter: f, = 80 us , 7; = 25 C A\ Wa 14 1 12 10 a b c d e f g h | j k os 2 _ 0 a 0.0 05 1015 20 25 30 35 40 V 50 Vos Typ. transfer characteristics / = f (Vag) parameter: f, = 80 Us Vps22 x /p x Rpsionymax : / t / * / RG, / , / / Oo. 61 2 3 4 5 6 7 8 V_ 10 Typ. drain-source on-resistance Fos (on) = FUp) parameter: f, = 80 us, Tj = 25C 0.070 Q 0.060 Fog (Q)055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 Vas [V] = a b c d e f g h i j 0.0057 35 40 45 5.0 55 60 65 7.0 80 100 0.000 0 2 4 6 8 10 12 A 15 hhBUZ 100SL-4 Preliminary data Drain-source on-resistance Rpg (on) = f(7}) parameter: [hp =7.4A, Vas =5V 0.065 Q 0.055 Fos (08,050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 + 0.010 0.005 0.000 -60 -20 20 60 100 C T Typ. capacitances C=f(Vps) parameter: Vas = OV, f= 1MHz 104 pF 108 180 Gate threshold voltage Ves (thy = (7) parameter: Vas = Vos, Ip = 180 HA 4.6 Vv 4.0 Vestn) 3.6 3.2 2.8 2.4 2.0 0.8 0.4 0.0 -60 -20 20 60 100 C 180 Forward characteristics of reverse diode lp = I(Vgp) parameter: qT, t, = 80 us 108 102 101 j= 25 C typ Tes 175 C typ 7, =25 C (98%) T=175 C (98%) 10 00 04 08 12 16 20 24 V 30 VgpSIEAAEAIG a BUZ 100SL-4 Si E M hy Preliminary data Avalanche energy Eng = f( T) Typ. gate charge parameter: Ip = 7.4 A, Vop = 25 V Vas = F(QGate) Rag = 25, L = 13.8 mH parameter: Ip puis = 7A 400 16 mJ Vv E,s 320 Vas 12 280 240 10 200 8 160 6 120 4 80 40 2 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 nC 130 > 7; Pate Drain-source breakdown voltage Viaryoss = /(7)) (BR)DSS -60 -20 20 60 100 C 180 p T.