DESCRIPTION
The
µ
PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Low current : ICC = 26.0 mA TYP.
• Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz
: PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz
• High linearity : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz
: PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz
• Power gain : GP = 32.8 dB MIN. @ f = 1.0 GHz
: GP = 33.5 dB MIN. @ f = 2.2 GHz
• Gain flatness :
∆
GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
• Noise figure : NF = 4 dB TYP. @ f = 1.0 GHz
: NF = 4.1 dB TYP. @ f = 2.2 GHz
• Supply voltage : VCC = 4.5 to 5.5 V
• Port impedance : input/output 50 Ω
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
µ
PC3232TB-E3
µ
PC3232TB-E3-A 6-pin super minimold
(Pb-Free) C3S • Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order:
µ
PC3232TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC3232TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
Document No. PU10597EJ01V0DS (1st edition)
Date Published May 2006 NS CP(K)
PIN CONNECTIONS
Pin No. Pin Name
1 OUTPUT
2 GND
3 VCC
4 INPUT
5 GND
(Top View)
3
2
1
4
5
6
C3S
(Bottom View)
4
5
6
3
2
1
(Top View)
3
2
1
4
5
6
6 GND
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Part No. PO (sat)
(dBm) GP
(dB) NF
(dB) ICC
(mA) Package Marking
µ
PC2708TB +10.0 15.0 6.5 26 6-pin super minimold C1D
µ
PC2709TB +11.5 23.0 5.0 25 C1E
µ
PC2710TB +13.5 33.0 3.5 22 C1F
µ
PC2776TB +8.5 23.0 6.0 25 C2L
µ
PC3223TB +12.0 23.0 4.5 19 C3J
µ
PC3225TB +15.5 Note 32.5 Note 3.7 Note 24.5 C3M
µ
PC3226TB +13.0 25.0 5.3 15.5 C3N
µ
PC3232TB +15.5 32.8 4.0 26 C3S
Note
µ
PC3225TB is f = 0.95 GHz
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Data Sheet PU10597EJ01V0DS
2
µ
PC3232TB
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Conditions Ratings Unit
Supply Voltage VCC TA = +25°C 6.0 V
Total Circuit Current ICC TA = +25°C 45 mA
Power Dissipation PD TA = +85°C Note 270 mW
Operating Ambient Temperature TA −40 to +85 °C
Storage Temperature Tstg −55 to +150 °C
Input Power Pin TA = +25°C 0 dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Operating Ambient Temperature TA −40 +25 +85 °C
Data Sheet PU10597EJ01V0DS 3
µ
PC3232TB
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = V out = 5.0 V, ZS = ZL = 50 Ω)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Circuit Current ICC No input signal 20 26 32 mA
Power Gain 1 GP1 f = 0.25 GHz, Pin = −35 dBm 29 31.5 34 dB
Power Gain 2 GP2 f = 1.0 GHz, Pin = −35 dBm 30 32.8 35.5
Power Gain 3 GP3 f = 1.8 GHz, Pin = −35 dBm 31 33.8 37
Power Gain 4 GP4 f = 2.2 GHz, Pin = −35 dBm 30.5 33.5 36.5
Power Gain 5 GP5 f = 2.6 GHz, Pin = −35 dBm 29 32.2 35.5
Power Gain 6 GP6 f = 3.0 GHz, Pin = −35 dBm 27 30.7 34
Gain Flatness
∆
GP f = 1.0 to 2.2 GHz, Pin = −35 dBm − 1.0 − dB
K factor 1 K1 f = 1.0 GHz, Pin = −35 dBm − 1.3 − −
K factor 2 K2 f = 2.2 GHz, Pin = −35 dBm − 1.9 − −
Saturated Output Power 1 PO (sat) 1 f = 1.0 GHz, Pin = 0 dBm +13 +15.5 − dBm
Saturated Output Power 2 PO (sat) 2 f = 2.2 GHz, Pin = −5 dBm +9.5 +12 −
Gain 1 dB Compression Output Power 1
PO (1 dB) 1 f = 1.0 GHz +8 +11 − dBm
Gain 1 dB Compression Output Power 2
PO (1 dB) 2 f = 2.2 GHz +6 +8.5 −
Noise Figure 1 NF1 f = 1.0 GHz − 4 4.8 dB
Noise Figure 2 NF2 f = 2.2 GHz − 4.1 4.9
Isolation 1 ISL1 f = 1.0 GHz, Pin = −35 dBm 36 41 − dB
Isolation 2 ISL2 f = 2.2 GHz, Pin = −35 dBm 38 45 −
Input Return Loss 1 RLin1 f = 1.0 GHz, Pin = −35 dBm 9.5 13 − dB
Input Return Loss 2 RLin2 f = 2.2 GHz, Pin = −35 dBm 10 14.5 −
Output Return Loss 1 RLout1 f = 1.0 GHz, Pin = −35 dBm 12 15.5 − dB
Output Return Loss 2 RLout2 f = 2.2 GHz, Pin = −35 dBm 12 15 −
Input 3rd Order Dis tortion I ntercept Point 1
IIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − −9 − dBm
Input 3rd Order Dist ortion Int ercept Point 2
IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz − −15.5 −
Output 3rd Order Dist ortion Intercept Point 1
OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − +23.5 − dBm
Output 3rd Order Dist ortion Intercept Point 2
OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz − +18 −
2nd Order Intermodulation Distortion IM2 f1 = 1 000 MHz, f2 = 1 001 MHz,
Pout = −5 dBm/tone
− 50 − dBc
2nd Harmonic
2f0 f0 = 1.0 GHz, Pout = −15 dBm − 70 − dBc
Data Sheet PU10597EJ01V0DS
4
µ
PC3232TB
TEST CIRCUIT
V
CC
1 000 pF
C4 1 000 pF
39 pF
C3
C6
Feed-through capacitor
C5
C1
100 pF
IN
3
1
4
2, 5, 6
33 pF
C2 OUT
GND
R1
L1
1 000 pF
47 nH
L2
68 nH
560 Ω
l1l2
Length of microstrip line : l1 = 2.25 mm
l2 = 2.75 mm
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type Value
R1 Chip Resistance 560 Ω
L1 Chip Inductor 47 nH
L2 Chip Inductor 68 nH
C1 Chip Capacitor 100 pF
C2 Chip Capacitor 33 pF
C3, C4 Chip Capacitor 1 000 pF
C5 Chip Capacitor 39 pF
C6 Feed-through Capacitor 1 000 pF
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect
an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable (Refer to the following page).
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
Data Sheet PU10597EJ01V0DS 5
µ
PC3232TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C6: Feed-through Capacitor
C5
C1
C4
C3
L1 R1 C2
2.75 mm
2.25 mm
Notes
1. 19 × 21.46 × 0.51 mm double sided copper clad RO4003C
(Rogers) board.
2. Back side: GND pattern
3. Au plated on pattern
4. : Through holes
5. L1, L2: FDK’s products
COMPONENT LIST
Value Size
R1 560 Ω 1005
L1 47 nH 1005
L2 68 nH 1005
C1 100 pF 1608
C2 33 pF 1608
C3, C4 1 000 pF 1005
C5 39 pF 1608
C6 1 000 pF Feed-through
Capacitor
Data Sheet PU10597EJ01V0DS
6
µ
PC3232TB
TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified)
35
30
25
20
15
10
5
00 123456
+25˚C
–40˚C
T
A
= +85˚C
No Input Signal
40
20
0
–20
–40
–60
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
V
CC
= 4.5 to 5.5 V
1: –40.01 dB
0.25 GHz
2: –41.32 dB
1 GHz
3: –46.39 dB
2.2 GHz
4: –48.59 dB
2.6 GHz
Frequency f (GHz)
ISOLATION vs. FREQUENCY
Isolation ISL (dB)
4
2
1
3
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
Circuit Current I
CC
(mA)
Supply Voltage V
CC
(V)
30
29
28
27
26
25
24
23
22
21
20
–50 –25 0 25 50 75 100
No Input Signal
CURCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
Circuit Current I
CC
(mA)
Operating Ambient Temperature T
A
(°C)
20
10
0
–10
–20
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
5.5 V
VCC = 4.5 V 5.0 V
1: –12.35 dB
0.25 GHz
2: –12.47 dB
1 GHz
3: –13.77 dB
2.2 GHz
4: –14.45 dB
2.6 GHz
INPUT RETURN LOSS vs. FREQUENCY
Frequency f (GHz)
4
23
1
Input Return Loss RL
in
(dB)
20
10
0
–10
–20
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
4.5 V
VCC = 5.5 V 5.0 V
1: –14.38 dB
0.25 GHz
2: –15.52 dB
1 GHz
3: –14.84 dB
2.2 GHz
4: –16.50 dB
2.6 GHz
Frequency f (GHz)
OUTPUT RETURN LOSS vs. FREQUENCY
4
2
1
3
Output Return Loss RL
out
(dB)
40
35
30
25
20
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
4.5 V
VCC = 5.5 V 5.0 V
1: 31.56 dB
0.25 GHz
2: 32.71 dB
1 GHz
3: 33.37 dB
2.2 GHz
4: 32.14 dB
2.6 GHz
Frequency f (GHz)
POWER GAIN vs. FREQUENCY
Power Gain G
P
(dB)
234
1
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS 7
µ
PC3232TB
20
15
10
5
0
–5
–10
–15
–20
20
15
10
5
0
–5
–10
–15
–20
–50 –40 –30 –20 –10 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
–50 –40 –30 –20 –10 0
4.5 V
V
CC
= 5.5 V
f = 1.0 GHz
T
A
= +85˚C
+25˚C
–
40˚C
f = 2.2 GHz
4.5 V
V
CC
= 5.5 V
5.0 V
V
CC
= 4.5 V
5.5 V
5.0 V
5.0 V
NOISE FIGURE vs. FREQUENCY
Frequency f (GHz)
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
Frequency f (GHz)
Noise Figure NF (dB)
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(dBm)
Input Power P
in
(dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS
8
µ
PC3232TB
f1 = 1 000 MHz
f2 = 1 001 MHz
Pout
IM3
P
out
P
out
IM
2
Pout
IM3
4.5 V
V
CC
= 5.5 V
5.0 V
2f0
3f0
P
out
2f0
3f0
f1 = 2 200 MHz
f2 = 2 201 MHz
f1 = 1 000 MHz
f2 = 1 001 MHz
f = 1 000 MHz
f1 = 1 000 MHz
f2 = 1 001 MHz
f = 2 200 MHz
OUTPUT POWER, 2ND HARMONIC,
3RD HARMONIC vs. INPUT POWER OUTPUT POWER, 2ND HARMONIC,
3RD HARMONIC vs. INPUT POWER
Output Power P
out
(dBm)
2nd Harmonic 2f0 (dBc)
3rd Harmonic 3f0 (dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Output Power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, IM
3 vs. INPUT POWER
Output Power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, IM
2 vs. INPUT POWER
Output Power P
out
(dBm)
2nd Order Intemodulation Distortion IM
2
(dBm)
Input Power P
in
(dBm)
IM
2 vs. INPUT POWER
2nd Order Intermodulation Distortion IM
2
(dBc)
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Output Power P
out
(dBm)
2nd Harmonic 2f0 (dBc)
3rd Harmonic 3f0 (dBc)
30
20
10
0
–10
–20
–30
–40
–50
–60
–70
–45 –40 –35 –30 –25 –20 –15 –10 –5
20
10
0
–10
–20
–30
–40
–50
–60
–70
–50 –40 –30 –20 –10 0 10
20
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–60 –50 –40 –30 –20 –10 0
20
10
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–60 –50 –40 –30 –20 –10 0
60
50
40
30
20
10
0
–50 –45 –40 –35 –30 –25 –20
30
20
10
0
–10
–20
–30
–40
–50
–60
–70
–45 –40 –35 –30 –25 –20 –15 –10 –5
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS 9
µ
PC3232TB
S-PARAMETERS (TA = +25°C, VDD = VCC = 5.0 V, Pin = −35 dBm)
S11−FREQUENCY
1 : 81.254 Ω –9.457 Ω 67.317 pF
250 MHz
2 : 46.533 Ω
–23.434 Ω
1 GHz
3 : 35.576 Ω
10.355 Ω
2.2 GHz
4 : 45.572 Ω
17.93 Ω
2.6 GHz
START: 100.000 000 MHz STOP : 3 100.000 000 MHz
4
2
1
3
S22−FREQUENCY
1 : 44.955 Ω 17.123 Ω 10.901 nH
250 MHz
2 : 48.875 Ω
–16.785 Ω
1 GHz
3 : 51.383 Ω
18.615 Ω
2.2 GHz
4 : 66.562 Ω
5.5 Ω
2.6 GHz
START: 100.000 000 MHz STOP : 3 100.000 000 MHz
4
2
1
3
Data Sheet PU10597EJ01V0DS
10
µ
PC3232TB
S-PARAMETERS
S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a
microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/microwave/index.html
Data Sheet PU10597EJ01V0DS 11
µ
PC3232TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15
+0.1
–0.05
0.2
+0.1
–0.05
2.0±0.2
1.3
0.650.65
1.25±0.1
2.1±0.1
0.1 MIN.
Data Sheet PU10597EJ01V0DS
12
µ
PC3232TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10597EJ01V0DS 13
µ
PC3232TB
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 100 0 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are under way to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
