SPECIFICATION Device Name : IGBT module Type Name : 2MBI200U2A-060 Spec. No. Oct. 30 '03 S.Ogawa Oct. 30 '03 S.Miyashita K.Yamada : Y.Seki MS5F5616 MS5F 5616 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -'03 Enactment Jan.-16 -'04 Revision Ind. R e c o r d s Content Applied date Issued date a Revised VCE(sat), VF value(P4/13), VF carve(P11/ 13) and Warnings(P12/13, 13/ 13) Drawn Checked Checked Approved S.Miyashita K.Yamada Y.Seki Issued date S.Ogawa S.Miyashita K.Yamada MS5F 5616 2 T.Hosen a 13 H04-004-06b Type Name : 2MBI200U2A-060 M232 PKG.No. 1. Outline Drawing ( Unit : mm ) G2 C2E1 E2 E2 3-M5 DEPTH 9.5min C1 E1 G1 Tab type terminals (AMP No.110 equivalent) LABEL 2. Equivalent circuit MS5F 5616 3 a 13 H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Symbols Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Icp Collector current Conditions Storage temperature Isolation voltage between terminal and copper base *1 Viso 1 device V V A W -40 +125 AC : 1min. 2500 VAC 3.5 Mounting *2 Terminals *2 Screw Torque 600 20 400 660 150 -Ic pulse Pc Tj Tstg Units 200 400 200 Continuous 1mS -Ic Collector Power Dissipation Junction temperature Maximum Ratings Nm 3.5 (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminals 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Items Symbols Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage Collector-Emitter saturation voltage VGE(th) Reverse recovery time Lead resistance, terminal-chip * (*) 1.0 mA - - 200 nA 6.2 6.7 7.7 V Tj= 25 Tj=125 Tj= 25 Tj=125 - 2.15 VCE=10V,VGE=0V,f=1MHz Vcc = 300V - 2.45 1.20 Ic = 200mA Ic = 200A Turn-on time Forward on voltage - VCE(sat) (chip) ton tr tr (i) toff tf a 2.4 1.85 a 2.1 14.0 0.40 Ic = 200A - 0.22 VGE=15V Rg = 16 - 0.16 0.48 VF (terminal) VGE=0V Tj= 25 Tj=125 VF (chip) IF = 200A Tj= 25 Tj=125 R lead Units - VGE=15V Cies Turn-off time VGE = 0V VCE = 600V VCE = 0V VGE=20V VCE = 20V VCE(sat) (terminal) Input capacitance Characteristics min. typ. max. Conditions IF = 200A 0.45 a - a - a 1.90 1.95 1.60 a 1.65 1.39 nF 0.60 1.20 0.07 a V s 2.30 - V 0.35 - s m Biggest internal terminal resistance among arm. MS5F 5616 4 a 13 H04-004-03a 5. Thermal resistance characteristics Items Symbols Thermal resistance(1device) Rth(j-c) Contact Thermal resistance Rth(c-f) Conditions min. IGBT FWD with Thermal Compound () Characteristics typ. max. - - 0.19 0.32 - 0.05 - Units /W This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Logo of production 2MBI200U2A-060 200A 600V Lot.No. Place of manufacturing (code) 7.Applicable category This specification is applied to IGBT Module named 2MBI200U2A-060 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 90% 0V 0V V GE trr Irr VCE Ic 90% 0% 0% 0V 0A V CE Ic 90% Vcc RG L 0% VCE tr(i) V GE Ic tr ton tf toff 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F 5616 5 a 13 H04-004-03a 11. Reliability test results Reliability Test Items Mechanical Tests Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s 2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Atmospheric pressure : 1.7 x 10 5 Pa Test humidity : 855% Test duration : 96hr. 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 Temperature Cycle Test temp. : : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Test Method 401 Method Test Method 402 m ethod 5 (0:1) 5 (0:1) Test Method 403 Reference 1 Condition code B 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 m ethod Condition code A 5 (0:1) Low temp. -405 High temp. 125 5 Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 Low temp. 0 Used liquid : W ater with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F 5616 6 a 13 H04-004-03a Reliability Test Items Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 High temperature Reverse Bias Test duration 2 High temperature Bias (for gate) Test duration : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Test temp. Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 Condition code C 5 (0:1) Test Method 106 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit LSLx0.8 - USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV - USLx1.2 mV Broken insulation - The visual sample - Note LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F 5616 a 7 13 H04-004-03a Reliability Test Results Mechanical Tests Test categorie s Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 5 0 5 0 Method Test Method 402 method 3 Vibration Test Method 403 5 0 4 Shock Condition code B Test Method 404 5 0 Environment Tests Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle Test Method 103 5 0 5 0 Test Method 105 5 0 6 Thermal Shock Test Method 307 5 0 1 High temperature Reverse Bias Test Method 101 5 0 Test Method 101 5 0 Test Method 102 5 0 5 0 Test code C Test Method 103 Test code E method Endurance Tests Condition code A 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 106 MS5F 5616 8 a 13 H04-004-03a Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 / chip Tj= 125 / chip 500 500 VGE=20V 15V 12V VGE=20V 15V 12V 400 Collector current : Ic [A] Collector current : Ic [A] 400 10V 300 200 10V 300 200 8V 100 100 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 10 Collector - Emitter voltage : VCE [ V ] 500 400 Collector current : Ic [A] 3 Tj=25 Tj=125 300 200 100 0 8 6 4 Ic=400A Ic=200A Ic=100A 2 0 0 1 2 3 4 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Vcc=300V Ic=200ATj= 25 Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies Coes Cres [ nF ] 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 200 400 600 800 Gate charge : Qg [ nC ] MS5F 5616 9 a 13 H04-004-03a Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=16, Tj= 25 Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=16, Tj=125 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 ton 1000 toff tr 100 tf 10 10 0 100 200 300 0 400 Collector current : Ic [ A ] 300 400 Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=16 10000 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=15V, Tj= 25 1000 toff ton tf tr 100 Eoff(125) Eon(125) 15 Eoff(25) Eon(25) 10 5 Err(125) 10 Err(25) 0 1.0 10.0 100.0 0 Gate resistance : Rg [ ] 100 200 300 400 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=15V, Tj= 125 Reverse bias safe operating area (max.) +VGE=15V,-VGE15V, RG16 ,Tj125 500 30 Eon 25 400 20 15 Eoff 10 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 100 300 200 100 5 Err 0 1.0 10.0 Gate resistance : Rg [ ] 100.0 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] MS5F 5616 10 a 13 H04-004-03a a Reverse recovery characteristics (typ.) Forward current vs. Forward on voltage (typ.) chip Vcc=300V, VGE=15V, Rg=16 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 500 400 Tj=25 300 Tj=125 200 100 Irr (125) Irr (25) trr (125) trr (25) 100 10 0 0 1 2 3 Forward on voltage : VF [ V ] 0 100 200 300 400 Forward current : IF [ A ] Transient thermal resistance (max.) Thermal resistanse : Rth(j-c) [/W ] 1.000 FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] MS5F 5616 11 a 13 H04-004-03a a Warnings This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. When electric power is connected to equipments, rush current will be flown through rectifying diode to charge 2 DC capacitor. Guaranteed value of the rush current is specified as I t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. 2 2 I t()I t If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA MS5F 5616 a 12 13 H04-004-03a - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) a - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG a - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. MS5F 5616 a 13 13 H04-004-03a