IGBT module
2MBI200U2A-060
MS5F5616
1
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
H04-004-07b
MS5F 5616 13
Oct. 30 ’03 S.Ogawa
S.Miyashita Y.Seki
K.Yamada
Oct. 30 ’03
a
H04-004-06b
R e v i s e d R e c o r d s
2
Date Classi-
fication Ind. Content Applied
date Drawn Checked Checked Approved
Enactment Issued
date
MS5F 5616 13
Oct.-30 -’03 K.YamadaS.Miyashita Y.Seki
a
Jan.-16 -’04 Revision a
Revised VCE(sat), VF
value(P4/13), VF carve(P11/
13) and Warnings(P12/13, 13/
13)
Issued
date K.YamadaS.Miyashita T.Hosen
S.Ogawa
H04-004-03a
MS5F 5616 13
a
3
1. Outline Drawing ( Unit : mm )
Type Name : 2MBI200U2A-060 䋯䇭
䋯䇭䋯䇭
䋯䇭PKG.No. M232
DEPTH 9.5min
3-M5
(AMP No.110 equivalent)
Tab type terminals
C1E2
C2E1 G2
E2
E1
G1
2. Equivalent circuit
LABEL
H04-004-03a
MS5F 5616 13
a
4
3.Absolute Maximum Ratings ( at Tc= 25㷄 unless otherwise specified 䋩
Continuous
1mS
1 device
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
Terminals 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25㷄 unless otherwise specified)
(*) Biggest internal terminal resistance among arm.
Conditions
Lead resistance, terminal-chip * m㱅
R lead -
tr
VGE(th)
VCE(sat)
(terminal)
Vcc = 300V
Turn-on time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Ic = 200A
Ic = 200mA
Cies VCE=10V,VGE=0V,f=1MHz
VGE=15V
Ic = 200A
ton
tr (i)
Tj=125㷄
VGE=±15V
0.07
toff
tf
Rg = 16 ȍ
VF
(terminal)
Tj= 25㷄
䌴䌲䌲 -
VF
(chip)
Tj= 25㷄-
Tj=125㷄
IF = 200A -
VGE=0V -
a 2.30
V
a 1.65 -
a 1.60 -
a 1.95 -
-0.22
-a 1.90
200
400
-0.40
V
±20 V
Items Symbols
VCESCollector-Emitter voltage
VGESGate-Emitter voltage
600
VAC
N䊶m
-Ic pulse
Pc
Tj
A
㷄
W
150
200
Collector current
Junction temperature
Collector Power Dissipation
-Ic
Ic
Icp
400
660
Terminals *2
Screw Torque
Storage temperature
Isolation
voltage Viso
Mounting *2
-40䌾 +125
2500
Units
max.typ.min.
Characteristics
between terminal and copper base *1
-
-
3.5
3.5
Conditions
6.2
Tstg
VGE = 0V
Items Symbols
VGE=±20V
VCE = 0V
IGES
ICES VCE = 600V
nA
1.0 mA
V
-
7.7 V
200
6.7
Units
-1.85 -
Maximum
Ratings
- 2.15 2.45
-a 2.4
a 2.1 -
-0.16
-0.48
-
µsIF = 200A - 0.35
1.39 -
14.0 - nF
0.45
1.20
0.60
-µs
1.20
-
VCE(sat)
(chip)
Tj= 25㷄
Tj=125㷄
Tj= 25㷄
Tj=125㷄
Turn-off time
Forward on voltage
Reverse recovery time
-
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance -
VCE = 20V
-
H04-004-03a
MS5F 5616 13
a
5
5. Thermal resistance characteristics
㶎 This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
7.Applicable category
This specification is applied to IGBT Module named 2MBI200U2A-060 .
8.Storage and transportation notes
࡮The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% .
࡮Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
࡮Avoid exposure to corrosive gases and dust.
࡮Avoid excessive external force on the module.
࡮Store modules with unprocessed terminals.
࡮Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
Lot.No. Place of manufacturin
g
(code
)
Items Symbols Conditions Characteristics Units
min. typ. max.
FWD
-
Thermal resistance(1device)
Contact Thermal resistance
Rth(j-c)
Rth(c-f) with Thermal Compound (㶎)
-
-0.05
Logo of production
㷄/W
200A 600V
2MBI200U2A-060
-0.19
- - 0.32
IGBT
L
Vcc
Ic
VCE
RG
VGE
VGE
VCE
Ic
0V
0A
0V
0%
90%
0% 0%
90%
90%
0V
Ic
VCE
㨪
㨪
㨪
㨪
㨪
㨪
on
onon
on
t
tt
t
r
rr
r
t
tt
t
r(i)
r(i)r(i)
r(i)
t
tt
t
off
offoff
off
t
tt
t
f
ff
f
t
tt
t
rr
rrrr
rr
I
II
I
rr
rrrr
rr
t
tt
t
H04-004-03a
MS5F 5616 13
a
Reliabilit
y
Test Items
Test
cate-
gories
Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 Terminal Strength Pull force : 20N Test Method 401 5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec. Method㸇
2 Mounting Strength Screw torque : 2.5 ~ 3.5 N䍃m (M5) Test Method 402 5 ( 0 : 1 )
Test time : 10±1 sec. method㸈
3 Vibration Range of frequency : 10 ~ 500Hz Test Method 403 5 ( 0 : 1 )
Sweeping time : 15 min. Reference 1
Acceleration : 100m/s2Condition code B
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)
4 Shock Maximum acceleration : 5000m/s2Test Method 404 5 ( 0 : 1 )
Pulse width : 1.0msec. Condition code B
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 㷄Test Method 201 5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 㷄Test Method 202 5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 㷄Test Method 103 5 ( 0 : 1 )
Humidity Relative humidity : 85±5% Test code C
Storage Test duration : 1000hr.
4 Unsaturated Test temp. : 120㫧2㷄Test Method 103 5 ( 0 : 1 )
Pressure Cooker Atmospheric pressure : 1.7 × 105 Pa Test code E
Test humidity : 85±5%
Test duration : 96hr.
5 Temperature Test Method 105 5 ( 0 : 1 )
Cycle Test temp. : Low temp. -40㫧5㷄
High temp. 125 㫧5㷄
RT 5 ~ 35 㷄
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles : 100 cycles
6 Thermal Shock +0 Test Method 307 5 ( 0 : 1 )
Test temp. : High temp. 100 -
5
㷄method 㸇
+5 Condition code A
Low temp. 0 -
0
㷄
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles
Mechanical Tests
Environment Tests
11. Reliability test results
6
H04-004-03a
MS5F 5616 13
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Reliabilit
y
Test Items
Test
cate-
gories
Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 High temperature Test Method 101 5 ( 0 : 1 )
Reverse Bias Test temp. : Ta = 125㫧5㷄
(
T
j
㻡 150 㷄
)
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
2 High temperature Test Method 101 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125㫧5㷄
(
T
j
㻡 150 㷄
)
Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E
VCE = 0V
Test duration : 1000hr.
3 Temperature Test Method 102 5 ( 0 : 1 )
Humidity Bias Test temp. : 85㫧2oCCondition code C
Relative humidity : 85㫧5%
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
4 Intermitted ON time : 2 sec. Test Method 106 5 ( 0 : 1 )
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. : ∆ T
j
=100±5 de
g
( for IGBT ) T
j
㻡 150 㷄, Ta=25±5 㷄
Number of cycles : 15000 cycles
Endurance TestsEndurance Tests
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 µA
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT ∆ VGE - USL×1.2 mV
resistance or ∆ VCE
FWD ∆ VF - USL×1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
7
H04-004-03a
MS5F 5616 13
a
Reliability Test Results
Test
cate-
gorie
s
Test items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of test
sample
Number
of
failure
sample
1 Terminal Strength Test Method 401 50
(Pull test) Method㸇
2 Mounting Strength Test Method 402 50
method㸈
3Vibration Test Method 403 50
Condition code B
4 Shock Test Method 404 50
Condition code B
1 High Temperature Storage Test Method 201 50
2 Low Temperature Storage Test Method 202 50
3 Temperature Humidity Test Method 103 50
Storage Test code C
4 Unsaturated Test Method 103 50
Pressure Cooker Test code E
5 Temperature Cycle Test Method 105 50
6 Thermal Shock Test Method 307 50
method 㸇
Condition code A
1 High temperature Reverse Bias Test Method 101 50
2 High temperature Bias Test Method 101 50
( for gate )
3 Temperature Humidity Bias Test Method 102 50
Condition code C
4 Intermitted Operating Life Test Method 106 50
(Power cycling)
( for IGBT )
Mechanical Tests
Environment Tests
Endurance Tests
8
H04-004-03a
MS5F 5616 13
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Vcc=300V䋬 Ic=200A䋬Tj= 25㷄
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125㷄 / chip
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25㷄 / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25䍽C / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
100
200
300
400
500
012345
Co
ector current : Ic
A
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
500
012345
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
500
01234
Co
ector current : Ic
A
Collector-Emitter voltage : VCE [V]
Tj=125㷄
Tj=25㷄
0
2
4
6
8
10
5 10152025
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=400A
Ic=200A
Ic=100A
0.1
1.0
10.0
100.0
0102030
Capacitance : Cies Coes Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0 200 400 600 800
Collector-Emitter voltage : VCE [ 100V/div ]
Gate - Emitter volta
g
e : VGE
[
5V/div
]
Gate charge : Qg [ nC ]
VGE
VCE
H04-004-03a
MS5F 5616 13
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10
+VGE=15V,-VGE㻡15V, RG㻢16ȍ ,Tj㻡125㷄
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=16ȍ
Switching loss vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=16ȍ, Tj= 25㷄
Vcc=300V, Ic=200A, VGE=±15V, Tj= 25㷄
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=16ȍ, Tj=125㷄
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=200A, VGE=±15V, Tj= 125㷄
Reverse bias safe operating area (max.)
10
100
1000
10000
0 100 200 300 400
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
tr
tf
toff
ton
10
100
1000
10000
0 100 200 300 400
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
tr
tf
toff
ton
10
100
1000
10000
1.0 10.0 100.0
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg [ ȍ ]
tr
tf
toff
ton
0
5
10
15
20
0 100 200 300 400
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
Eon(125㷄)
Eon(25㷄)
Eoff(125㷄)
Err(125㷄)
Err(25㷄)
Eoff(25㷄)
0
5
10
15
20
25
30
1.0 10.0 100.0
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ ȍ ]
Eoff
Err
Eon
0
100
200
300
400
500
0 200 400 600 800
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
H04-004-03a
MS5F 5616 13
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11
Transient thermal resistance (max.)
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=16ȍ
a Forward current vs. Forward on voltage (typ.)
chip
0
100
200
300
400
500
0123
F
orwar
d
current :
IF [ A ]
Forward on voltage : VF [ V ]
Tj=125
Tj=25㷄
10
100
1000
0 100 200 300 400
R
everse recovery curren
t
:
I
rr
[A]
Reverse recover
y
time : trr
[
nsec
]
Forward current : IF [ A ]
Irr (125㷄)
Irr (25㷄)
trr (125㷄)
trr (25㷄)
0.001
0.010
0.100
1.000
0.001 0.010 0.100 1.000
Thermal resistanse : Rth(j-c) [
㷄/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
H04-004-03a
MS5F 5616 13
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12
Warnings
This product shall be used within its absolute maximum rating (voltage, current, and temperature).䇭This product
may be broken in case of using beyond the ratings.
⵾ຠ䈱⛘ኻᦨᄢቯᩰ䋨㔚࿶䋬㔚ᵹ䋬󰶘ᐲ╬䋩䈱▸࿐ౝ䈪ᓮ૶↪䈘䈇䇯⛘ኻᦨᄢቯᩰ䉕⿥䈋䈩૶↪䈜䉎䈫䇮⚛ሶ䈏⎕უ䈜䉎
႐ว䈏䈅䉍䉁䈜䇯
Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
৻䈱ᘦ䈱᡿䈪⚛ሶ䈏⎕უ䈚䈢႐ว䉕⠨ᘦ䈚䇮໡↪㔚Ḯ䈫ᧄ⵾ຠ䈱㑆䈮ㆡಾ䈭ኈ㊂䈱䊍䊠䊷䉵෶䈲䊑䊧䊷䉦䊷䉕ᔅ䈝
ઃ䈔䈩Ἣἴ䋬῜⊒䋬ᑧ὾╬䈱䋲ᰴ⎕უ䉕㒐䈇䈪䈒䈣䈘䈇䇯
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
⵾ຠ䈱૶↪ⅣႺ䉕චಽ䈮ᛠី䈚䇮⵾ຠ䈱ା㗬ᕈኼ๮䈏ḩ⿷䈪䈐䉎䈎ᬌ⸛䈱䇮ᧄ⵾ຠ䉕ㆡ↪䈚䈩䈘䈇䇯⵾ຠ䈱ା㗬ᕈኼ๮
䉕⿥䈋䈩૶↪䈚䈢႐ว䇮ⵝ⟎䈱⋡ᮡኼ๮䉋䉍೨䈮⚛ሶ䈏⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯
When electric power is connected to equipments, rush current will be flown through rectifying diode to charge
DC ca
p
acitor. Guaranteed value of the rush current is s
p
ecified as I2t
(
non-re
p
etitive
)
, however fre
q
uent rush
current through the diode might make it's power cycle destruction occur because of the repetitive power.
In application which has such frequent rush current, well consideration to product life time (i.e. suppressing
the rush current) is necessary.
㔚Ḯᛩ౉ᤨ䈮ᢛᵹ↪䉻䉟䉥䊷䊄䈮䈲䇮䉮䊮䊂䊮䉰䊷䉕ల㔚䈜䉎ὑ䈱⓭౉㔚ᵹ䈏ᵹ䉏䉁䈜䇯䈖䈱⓭౉㔚ᵹ䈮ኻ䈜䉎଻⸽୯䈲
I2t(㕖➅㄰䈚)䈫䈚䈩⴫⸥䈘䉏䈩䈇䉁䈜䈏䇮䈖䈱⓭౉㔚ᵹ䈏㗫❥䈮ᵹ䉏䉎䈫I2t⎕უ䈫䈲೎䈮ᢛᵹ↪䉻䉟䉥䊷䊄䈱➅㄰䈚⽶⩄䈮
䉋䉎䊌䊪䊷䉰䉟䉪䊦⠴㊂⎕უ䉕⿠䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⓭౉㔚ᵹ䈏㗫❥䈮ᵹ䉏䉎䉋䈉䈭䉝䊒䊥䉬䊷䉲䊢䊮䈪䈲䇮⓭౉㔚ᵹ୯
䉕ᛥ䈋䉎䈭䈬䇮⵾ຠኼ๮䈮චಽ⇐ᗧ䈚䈩䈗૶↪䈘䈇䇯
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
㉄䊶᦭ᯏ‛䊶⣣㘩ᕈ䉧䉴䋨⎫ൻ᳓⚛䋬⎫㉄䉧䉴╬䋩䉕฽䉃ⅣႺ䈪૶↪䈘䉏䈢႐ว䇮⵾ຠᯏ⢻䊶ᄖⷰ╬䈱଻⸽䈲䈪䈐䉁䈞䉖䇯
Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is
classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.
ᧄ⵾ຠ䈲䇮䊌䊪䊷䉰䉟䉪䊦ኼ๮䉦䊷䊑એ䈪૶↪䈘䈇(ᛛⴚ⾗ᢱNo.: MT5F12959)䇯䊌䊪䊷䉰䉟䉪䊦⠴㊂䈮䈲䈖䈱㰱Tj䈮䉋䉎
႐ว䈱ઁ䈮䇮㰱Tc䈮䉋䉎႐ว䈏䈅䉍䉁䈜䇯䈖䉏䈲䉬䊷䉴󰶘ᐲ(Tc)䈱᣹㒠䈮䉋䉎ᾲ䉴䊃䊧䉴䈪䈅䉍䇮ᧄ⵾ຠ䉕䈗૶↪䈜䉎㓙
䈱᡼ᾲ⸳⸘䈮ଐሽ䈚䉁䈜䇯䉬䊷䉴󰶘ᐲ䈱᣹㒠䈏㗫❥䈮⿠䈖䉎႐ว䈲䇮⵾ຠኼ๮䈮චಽ⇐ᗧ䈚䈩䈗૶↪䈘䈇䇯
Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
┵ሶ෸䈶೙ᓮ┵ሶ䈮ᔕജ䉕䈋䈩ᄌᒻ䈘䈞䈭䈇䈪䈘䈇䇯䇭┵ሶ䈱ᄌᒻ䈮䉋䉍䇮ធ⸅⦟䈭䈬䉕ᒁ䈐⿠䈖䈜႐ว䈏䈅䉍䉁䈜䇯
Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
಄ළ䊐䉞䊮䈲䊈䉳ข䉍ઃ䈔૏⟎㑆䈪ᐔမᐲ䉕100mm䈪100umએ䇮⴫㕙䈱☻䈘䈲10umએ䈮䈚䈩䈘䈇䇯䇭ㆊᄢ䈭ಲ෻䉍
䈏䈅䈦䈢䉍䈜䉎䈫ᧄ⵾ຠ䈏⛘✼⎕უ䉕⿠䈖䈚䇮㊀ᄢ᡿䈮⊒ዷ䈜䉎႐ว䈏䈅䉍䉁䈜䇯䉁䈢䇮ㆊᄢ䈭ಳ෻䉍䉇䉉䈏䉂╬䈏䈅䉎䈫䇮
ᧄ⵾ຠ䈫಄ළ䊐䉟䊮䈱㑆䈮ⓨ㓗䈏↢䈛䈩᡼ᾲ䈏ᖡ䈒䈭䉍䇮ᾲ⎕უ䈮❬䈏䉎䈖䈫䈏䈅䉍䉁䈜䇯
In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
⚛ሶ䉕಄ළ䊐䉞䊮䈮ข䉍ઃ䈔䉎㓙䈮䈲䇮ᾲવዉ䉕⏕଻䈜䉎䈢䉄䈱䉮䊮䊌䉡䊮䊄╬䉕䈗૶↪䈒䈣䈘䈇䇯෶䇮ႣᏓ㊂䈏⿷䈚䈢䉍䇮
ႣᏓᣇᴺ䈏ㆡ䈣䈦䈢䉍䈜䉎䈫䇮䉮䊮䊌䉡䊮䊄䈏චಽ䈮⚛ሶో૕䈮ᐢ䈏䉌䈝䇮᡼ᾲᖡൻ䈮䉋䉎ᾲ⎕უ䈮❬䈏䉎䈏䈅䉍䉁䈜䇯
䉮䊮䊋䉡䊮䊄䉕ႣᏓ䈜䉎㓙䈮䈲䇮⵾ຠో㕙䈮䉮䊮䊌䉡䊮䊄䈏ᐢ䈏䈦䈩䈇䉎䉕⏕⹺䈚䈩䈒䈣䈘䈇䇯
(ታⵝ䈚䈢ᓟ䈮⚛ሶ䉕ข䉍䈲䈝䈜䈫䉮䊮䊌䉡䊮䊄䈱ᐢ䈏䉍ౕว䉕⏕⹺䈜䉎䈏಴᧪䉁䈜䇯)
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
䉺䊷䊮䉥䊐㔚࿶䊶㔚ᵹ䈱േ૞゠〔䈏RBSOA઀᭽ౝ䈮䈅䉎䈖䈫䉕⏕⹺䈚䈩䈘䈇䇯RBSOA䈱▸࿐䉕⿥䈋䈩૶↪䈜䉎䈫⚛ሶ䈏⎕უ
䈜䉎น⢻ᕈ䈏䈅䉍䉁䈜䇯
a
H04-004-03a
MS5F 5616 13
a
13
-If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
೙ᓮ┵ሶ䈮ㆊᄢ䈭㕒㔚᳇䈏ශട䈘䉏䈢႐ว䇮⚛ሶ䈏⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯ข䉍ᛒ䈇ᤨ䈲㕒㔚᳇ኻ╷䉕ታᣉ䈚䈩䈘䈇䇯
-Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
⚛ሶ䉕ⵝ⟎䈮ታⵝ䈜䉎㓙䈮䇮┵ሶ䉇೙ᓮ┵ሶ䈮ㆊᄢ䈭ᔕജ䉕䈋䈭䈇䈪䈘䈇䇯┵ሶ᭴ㅧ䈏⎕უ䈜䉎น⢻ᕈ䈏䈅䉍䉁䈜䇯
-In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
ㅒ䊋䉟䉝䉴䉭䊷䊃㔚࿶-VGE䈏⿷䈚䉁䈜䈫⺋ὐᒐ䉕⿠䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⺋ὐᒐ䉕⿠䈖䈘䈭䈇ὑ䈮-VGE䈲චಽ䈭୯䈪
⸳ቯ䈚䈩䈘䈇䇯䇭䋨ផᅑ୯ : -VGE = -15V)
a-In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
䉺䊷䊮䉥䊮 dv/dt 䈏㜞䈇䈫ኻ᛫䉝䊷䊛䈱䌉䌇䌂䌔䈏⺋ὐᒐ䉕⿠䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⺋ὐᒐ䉕⿠䈖䈘䈭䈇ὑ䈱ᦨㆡ䈭䊄䊤䉟䊑
᧦ઙ䋨+VGE, -VGE, RG╬䋩䈪䈗૶↪䈘䈇䇯
a- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
VCES䉕⿥䈋䈢㔚࿶䈏ශട䈘䉏䈢႐ว䇮䉝䊋䊤䊮䉲䉢䉕⿠䈖䈚䈩⚛ሶ⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯VCE䈲ᔅ䈝⛘ኻቯᩰ䈱▸࿐ౝ
䈪䈗૶↪䈘䈇䇯
Cautions
CautionsCautions
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷䈲⛘䈋䈝⵾ຠ䈱ຠ⾰䈫ା㗬ᕈ䈱ะ䈮ദ䉄䈩䈇䉁䈜䇯䈚䈎䈚䇮ඨዉ૕⵾ຠ䈲᡿㓚䈏⊒↢䈚䈢䉍䇮
⺋േ૞䈜䉎႐ว䈏䈅䉍䉁䈜䇯ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷⵾ඨዉ૕⵾ຠ䈱᡿㓚䉁䈢䈲⺋േ૞䈏䇮⚿ᨐ䈫䈚䈩り᡿䊶Ἣἴ
╬䈮䉋䉎⽷↥䈮ኻ䈜䉎៊ኂ䉇␠ળ⊛䈭៊ኂ䉕⿠䈖䈘䈭䈇䉋䈉䈮౬㐳⸳⸘䊶ᑧ὾㒐ᱛ⸳⸘䊶⺋േ૞㒐ᱛ⸳⸘䈭䈬቟ో⏕଻
䈱䈢䉄䈱ᚻᲑ䉕⻠䈛䈩䈘䈇䇯
- The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
ᧄ઀᭽ᦠ䈮⸥タ䈚䈩䈅䉎ᔕ↪଀䈲䇮ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷⵾ຠ䉕૶↪䈚䈢ઍ⴫⊛䈭ᔕ↪଀䉕⺑᣿䈜䉎䉅䈱䈪䈅䉍䇮
ᧄ઀᭽ᦠ䈮䉋䈦䈩Ꮏᬺᚲ᦭ᮭ䇮䈠䈱ઁᮭ೑䈱ታᣉ䈮ኻ䈜䉎଻㓚䉁䈢䈲ታᣉᮭ䈱⸵⻌䉕ⴕ䈉䉅䈱䈪䈲䈅䉍䉁䈞䉖䇯
- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,䇭please apply after confirmation
of this product to be satisfied about system construction and required reliability.
ᧄ઀᭽ᦠ䈮⸥タ䈘䉏䈢⵾ຠ䈲䇮๮䈮䈎䈎䉒䉎䉋䈉䈭⁁ᴫ䈪૶↪䈘䉏䉎ᯏེ䈅䉎䈇䈲䉲䉴䊁䊛䈮↪䈇䉌䉏䉎䈖䈫䉕
⋡⊛䈫䈚䈩⸳⸘䊶⵾ㅧ䈘䉏䈢䉅䈱䈪䈲䈅䉍䉁䈞䉖䇯ᧄ઀᭽ᦠ䈱⵾ຠ䉕ゞᯏེ䇮⦁⥾䇮⥶ⓨቝቮ䇮ක≮ᯏེ䇮ේሶജ
೙ᓮ䇮ᶏᐩ⛮ᯏེ䈅䉎䈇䈲䉲䉴䊁䊛䈭䈬䇮․ᱶ↪ㅜ䈻䈱䈗೑↪䉕䈗ᬌ⸛䈱㓙䈲䇮䉲䉴䊁䊛᭴ᚑ෸䈶ⷐ᳞ຠ⾰䈮
ḩ⿷䈜䉎䈖䈫䉕䈗⏕⹺䈱䇮䈗೑↪䈘䈇䇯
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.