ACS770LCB-50U-PFF-T - ALLEGRO MICROSYSTEMS

Application 1. The ACS770 outputs an analog signal,

VOUT

, that varies linearly with the bidirectional AC or DC

primary sampled current, IP

, within the range specified.

RF and CF are for optimal noise management, with

values that depend on the application.

ACS770xCB

Description

The Allegro™ ACS770 family of current sensor ICs provides

economical and precise solutions for AC or DC current sensing.

Typical applications include motor control, load detection and

management, power supply and DC-to-DC converter control,

inverter control, and overcurrent fault detection.

The device consists of a precision, low-offset linear Hall

circuit with a copper conduction path located near the die.

Applied current flowing through this copper conduction

path generates a magnetic field that is concentrated by a low

magnetic hysteresis core, then converted by the Hall IC into a

proportional voltage. Device accuracy is optimized through the

close proximity of the magnetic signal to the Hall transducer.

A precise, proportional output voltage is provided by the

low-offset, chopper-stabilized BiCMOS Hall IC, which is

programmed for accuracy at the factory. Proprietary digital

temperature compensation technology greatly improves the

IC accuracy and temperature stability without influencing the

high bandwidth operation of the analog output.

High level immunity to current conductor dV/dt and stray

electric fields is offered by Allegro proprietary integrated shield

technology for low output voltage ripple and low offset drift

in high-side, high voltage applications.

The output of the device has a positive slope (>VCC/2 for

bidirectional devices) when an increasing current flows through

the primary copper conduction path (from terminal 4 to terminal

5), which is the path used for current sampling. The internal

resistance of this conductive path is 100 μΩ typical, providing

low power loss.

The thickness of the copper conductor allows survival of the

device at high overcurrent conditions. The terminals of the

ACS770-DS

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

Continued on the next page…

Typical Application

5 V

VOUT

CBYP

0.1 F

IP+

IP–

GND

ACS770

VIOUT

VCC

Features and Benefits

▪ Industry-leading total output accuracy achieved with new

piecewise linear digital temperature compensation of

offset and sensitivity

▪ Industry-leading noise performance through proprietary

amplifier and filter design techniques

▪ 120 kHz typical bandwidth

▪ 4.1 μs output rise time in response to step input current

▪ Integrated shield greatly reduces capacitive coupling from

current conductor to die due to high dV/dt signals, and

prevents offset drift in high-side, high voltage applications

▪ Greatly improved total output error through digitally

programmed and compensated gain and offset over the full

operating temperature range

▪ Small package size, with easy mounting capability

▪ Monolithic Hall IC for high reliability

▪ Ultra-low power loss: 100 μΩ internal conductor resistance

▪ Galvanic isolation allows use in economical, high-side

current sensing in high voltage systems

▪ 4.5 to 5.5 V, single supply operation

▪ Output voltage proportional to AC or DC currents

▪ Factory-trimmed for accuracy

▪ Extremely stable output offset voltage

▪ Undervoltage lockout for VCC below specification

▪ AEC Q-100 automotive qualified

▪ UL certified, File No. E316429

PFF

Leadform

PSF

Leadform

Additional leadforms available for qualifying volumes

Type

tested

TÜV America

Certificate Number:

U8V 13 08 54214 027

Package: 5-pin package (suffix CB)

PSF

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

conductive path are electrically isolated from the signal leads (pins

1 through 3). This allows the ACS770 family of sensor ICs to be

used in applications requiring electrical isolation without the use of

opto-isolators or other costly isolation techniques.

The device is fully calibrated prior to shipment from the factory.

The ACS770 family is lead (Pb) free. All leads are plated with 100%

matte tin, and there is no Pb inside the package. The heavy gauge

leadframe is made of oxygen-free copper.

Description (continued)

Selection Guide

Part Number1Package Primary Sampled

Current , IP

(A)

Sensitivity

Sens (Typ.)

(mV/A)

Current

Directionality TOP

(°C) Packing2

Terminals Signal Pins

ACS770LCB-050B-PFF-T Formed Formed ±50 40.Bidirectional

–40 to 150

34 pieces

per tube

ACS770LCB-050U-PFF-T Formed Formed 50 80.Unidirectional

ACS770LCB-100B-PFF-T Formed Formed ±100 20.Bidirectional

ACS770LCB-100U-PFF-T Formed Formed 100 40.Unidirectional

ACS770KCB-150B-PFF-T Formed Formed ±150 13.3 Bidirectional

–40 to 125ACS770KCB-150B-PSF-T Straight Formed ±150 13.3 Bidirectional

ACS770KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional

ACS770ECB-200B-PFF-T Formed Formed ±200 10.Bidirectional

–40 to 85ACS770ECB-200B-PSF-T Straight Formed ±200 10.Bidirectional

ACS770ECB-200U-PFF-T Formed Formed 200 20.Unidirectional

1Additional leadform options available for qualified volumes.

2Contact Allegro for additional packing options.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Isolation Characteristics

Characteristic Symbol Notes Rating Unit

Dielectric Strength Test Voltage* VISO Agency type-tested for 60 seconds per

UL standard 60950-1, 2nd Edition 4800 VAC

Working Voltage for Basic Isolation VWFSI For basic (single) isolation per UL standard

60950-1, 2nd Edition

990 VDC or Vpk

700 Vrms

Working Voltage for Reinforced Isolation VWFRI For reinforced (double) isolation per UL standard

60950-1, 2nd Edition

636 VDC or Vpk

450 Vrms

*60-second testing is only done during the UL certification process. In production, Allegro conducts 1-second isolation testing according to UL

60950-1, 2nd Edition.

Absolute Maximum Ratings

Characteristic Symbol Notes Rating Unit

Forward Supply Voltage VCC 6V

Reverse Supply Voltage VRCC –0.1 V

Forward Output Voltage VIOUT 25 V

Reverse Output Voltage VRIOUT –0.1 V

Output Source Current IOUT(Source) VIOUT to GND 2.8 mA

Output Sink Current IOUT(Sink) Minimum pull-up resistor of 500 , from VCC to

VIOUT 10 mA

Nominal Operating Ambient Temperature TOP

Range E –40 to 85 ºC

Range K –40 to 125 ºC

Range L –40 to 150 ºC

Maximum Junction TJ(max) 165 ºC

Storage Temperature Tstg –65 to 165 ºC

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Typical Overcurrent Capabilities1,2

Characteristic Symbol Notes Rating Unit

Overcurrent IPOC

TA = 25°C, 1s duration, 1% duty cycle 1200 A

TA = 85°C, 1s duration, 1% duty cycle 900 A

TA = 150°C, 1s duration, 1% duty cycle 600 A

1Test was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only.

2For more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com.

Thermal Characteristics may require derating at maximum conditions

Characteristic Symbol Test Conditions* Value Unit

Package Thermal Resistance RθJA

Mounted on the Allegro evaluation board with

2800 mm2 (1400 mm2 on component side and

1400 mm2 on opposite side) of 4 oz. copper con-

nected to the primary leadframe and with thermal

vias connecting the copper layers. Performance

is based on current flowing through the primary

leadframe and includes the power consumed by

the PCB.

7 ºC/W

*Additional thermal information available on the Allegro website

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

IP+

IP–

VIOUT

GND

VCC

Terminal List Table

Number Name Description

1 VCC Device power supply terminal

2 GND Signal ground terminal

3 VIOUT Analog output signal

4 IP+ Terminal for current being sampled

5 IP– Terminal for current being sampled

Functional Block Diagram

Pin-out Diagram

V+

Dynamic Offset

Cancellation

EEPROM and

Control Logic

VCC

GND

VIOUT

Signal Recovery

To all subcircuits

BYP

Temperature

Sensor

Offset ControlSensitivity Control

Programming

Control

IP–

IP+

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

COMMON OPERATING CHARACTERISTICS valid at TOP = –40°C to 150°C, CBYP = 0.1 F, and VCC = 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Supply Voltage VCC 4.5 5.0 5.5 V

Supply Current ICC Output open – 10 15 mA

Supply Zener Voltage VZTA = 25°C, ICC = 30 mA 6.5 7.5 – V

Power-On Delay1,2 tPOD TA = 25°C, CBYP = open – 90 – s

Temperature Compensation

Power-On Time1tTC TA = 25°C, CBYP = open – 90 – s

Undervoltage Lockout (UVLO)

Threshold1

VUVLOH TA = 25°C, VCC rising – 3.8 – V

VUVLOL TA = 25°C, VCC falling – 3 – V

UVLO Enable/Disable Delay

Time1,2

tUVLOE TA = 25°C, CBYP = open, VCC Fall Time (5 V to 3 V) = 1 s – 75 – s

tUVLOD TA = 25°C, CBYP = Open,

VCC Recover Time (3 V to 5 V) = 1 s–14 –s

Power-On Reset Voltage1VPORH TA = 25°C, VCC rising –4–V

VPORL TA = 25°C, VCC falling – 2.7 – V

Rise Time1,2 trIP step = 60% of IP+, 10% to 90% rise time, TA = 25°C,

CL = 0.47 nF – 4.1 – s

Propagation Delay Time1,2 tPROP IP step = 60% of IP+, 20% input to 20% output, TA = 25°C,

CL = 0.47 nF – 2.4 – s

Response Time1,2 tRESPONSE IP step = 60% of IP+, 80% input to 80% output, TA = 25°C,

COUT = 0.47 nF – 4.6 – s

Internal Bandwidth BWi–3 dB; TA = 25°C, CL = 0.47 nF – 120 – kHz

Output Load Resistance RLVIOUT to GND 4.7 – – k

Output Load Capacitance CLVIOUT to GND – – 10 nF

Primary Conductor Resistance RPRIMARY TA = 25°C – 100 – 

Quiescent Output Voltage1VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25°C – VCC/2 – V

VIOUT(QUNI) Unidirectional variant, IP = 0 A, TA = 25°C – 0.5 – V

Ratiometry1VRAT VCC = 4.5 to 5.5 V – 100 – %

1See Characteristic Definitions section of this datasheet.

2See Timing Data Section of this data sheet

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X050B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–50 – 50 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 39.04 40 40.96 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 39.04 40 40.96 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 38.6 40 41.4 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.72 ±0.24 0.72 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –10 –mV

Nonlinearity ELIN Measured using full scale and half scale IP,–1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 120 300 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 2.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X050U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0–50A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 78.08 80 81.92 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 78.08 80 81.92 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 77.2 80 82.8 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.44 ±0.48 1.44 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –20 –mV

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 50 A – 120 300 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 0.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X100B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–100 – 100 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 19.52 20 20.48 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 19.52 20 20.48 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 19.3 20 20.7 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.36 ±0.12 0.36 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –6 –

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 170 425 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 2.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X100U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 150°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 100 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 39.04 40 40.96 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 39.04 40 40.96 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 38.6 40 41.4 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.72 ±0.24 0.72 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –12 –mV

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 150°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 150°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 100 A – 170 425 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 150°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 0.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X150B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 125°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–150 – 150 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 13.01 13.33 13.65 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 13.01 13.33 13.65 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 12.86 13.33 13.8 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.24 ±0.08 0.24 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –4 –

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 125°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 225 500 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 2.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X150U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 125°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 150 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 26.02 26.66 27.30 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 26.02 26.66 27.30 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 25.73 26.66 27.59 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.48 ±0.16 0.48 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –6 –

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 125°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 125°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 150 A – 225 500 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 125°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 0.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X200B PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP–200 – 200 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 9.76 10 10.24 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 9.76 10 10.24 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 9.65 10 10.35 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.18 ±0.06 0.18 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –3 –

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 2.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

X200U PERFORMANCE CHARACTERISTICS1: TOP = –40°C to 85°C, CBYP = 0.1 F, VCC

= 5 V, unless otherwise specified

Characteristic Symbol Test Conditions Min. Typ. Max. Unit

Primary Sampled Current IP0 – 200 A

Sensitivity2

SensTA Measured using full scale IP

, TA = 25°C 19.52 20 20.48 mV/A

Sens

(TOP)HT Measured using full scale IP

, TOP = 25°C to 150°C 19.52 20 20.48 mV/A

Sens

(TOP)LT Measured using full scale IP

, TOP = –40°C to 25°C 19.3 20 20.7 mV/A

Sensitivity Drift Over Lifetime3SensLIFE TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-

tion testing –0.36 ±0.12 0.36 mV/A

Noise4VNOISE TA= 25°C, 10 nF on VIOUT pin to GND –6 –

Nonlinearity ELIN Measured using full scale and half scale IP –1 – 1 %

Electrical Offset Voltage5,6

VOE(TA) IP = 0 A, TA = 25°C –10 ±4 10 mV

VOE(TOP)HT IP = 0 A, TOP = 25°C to 85°C –10 ±6 10 mV

VOE(TOP)LT IP = 0 A, TOP = –40°C to 25°C –20 ±6 20 mV

Electrical Offset Voltage Drift

Over Lifetime3∆VOE(LIFE) IP = 0 A, TOP = –40°C to 85°C, shift after AEC Q100 grade 0

qualification testing –5 ±2 5 mV

Magnetic Offset Error IERROM IP = 0 A, TA = 25°C, after excursion of 200 A – 250 575 mA

Total Output Error7

ETOT(TA) Measured using full scale IP

, TA = 25°C –2.4 ±0.5 2.4 %

ETOT(HT) Measured using full scale IP

, TOP = 25°C to 150°C –2.4 ±1.5 2.4 %

ETOT(LT) Measured using full scale IP

, TOP = –40°C to 25°C –3.5 ±2 3.5 %

Total Output Error Drift Over

Lifetime3ETOT(LIFE) TOP = –40°C to 85°C, shift after AEC Q100 grade 0 qualifica-

tion testing –1.9 ±0.6 1.9 %

1See Characteristic Performance Data page for parameter distributions over temperature range.

2This parameter may drift a maximum of SensLIFE over lifetime.

3Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot

be guaranteed. Drift is a function of customer application conditions. Please contact Allegro MicroSystems for further information.

4±3 sigma noise voltage.

5Drift is referred to ideal VIOUT(QBI) = 0.5 V.

6This parameter may drift a maximum of VOE(LIFE) over lifetime.

7This parameter may drift a maximum of ETOT(LIFE) over lifetime.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Characteristic Performance Data

Data taken using the ACS770LCB-50B

Accuracy Data

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6

-8–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

41.0

40.8

40.6

40.4

40.2

40.0

39.8

39.6

39.4

2.5

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

250

200

150

100

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6

-8–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

20.4

20.3

20.2

20.1

20.0

19.9

19.8

19.7

19.6

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

400

350

300

250

200

150

100

2.5

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Characteristic Performance Data

Data taken using the ACS770LCB-100B

Accuracy Data

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

13.60

13.55

13.50

13.45

13.40

13.35

13.30

13.25

13.20

13.15

13.10

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

450

400

350

300

250

200

150

100

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Characteristic Performance Data

Data taken using the ACS770KCB-150B

Accuracy Data

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Mean

Mean + 3 sigma Mean – 3 sigma

-2

-4

-6–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75 –50 100 125 150500-25 25 75

–50 100 125 150500-25 25 75

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

10.15

10.10

10.05

10.00

9.95

9.90

9.85

9.80

VOE (mV)

ELIN (%)

Sens (mV/A)

ETOT (%)

(°C)T

(°C)

600

500

400

300

200

100

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

IERROM (mA)

(°C)

Electrical Offset Voltage versus Ambient Temperature

Nonlinearity versus Ambient Temperature

Sensitivity versus Ambient Temperature

Total Output Error versus Ambient Temperature

Magnetic Offset Error versus Ambient Temperature

Characteristic Performance Data

Data taken using the ACS770ECB-200B

Accuracy Data

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Characteristic Performance Data

Data taken using the ACS770LCB-100B

Timing Data

Response Time

IP = 60 A , 10% to 90% rise time = 1 s, CBYPASS = 0.1 F, CL = 0.47 nF

Rise Time

IP = 60 A , 10% to 90% rise time = 1 s, CBYPASS = 0.1 F, CL = 0.47 nF

80% of input 80% of output

tRESPONSE = 4.56 s

IP = 60 A

VIOUT

10% of output

90% of output

tr = 4.1 s

IP = 60 A

VIOUT

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Propagation Time

IP = 60 A , 10% to 90% rise time = 1 s, CBYPASS = 0.1 F, CL = 0.47 nF

Power-On Delay

IP = 60 A DC, CBYPASS = Open, CL = 0.47 nF

20% of input 20% of output

tPROP = 2.4 s

IP = 60 A

VIOUT

90% of output

tPOD = 88 s

VCC

VCC (min)

VIOUT

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

UVLO Enable Time ( tUVLOE

)

IP = 0 A , CBYPASS = Open, CL = Open, VCC 5 V to 3 V fall time = 1 s

UVLO Disable Time ( tUVLOD

)

IP = 0 A , CBYPASS = Open, CL = Open, VCC 3 V to 5 V recovery time = 1 s

90% of output

tUVLOD = 13.9 s

VCC

VCC (min)

VIOUT

tUVLOE = 75.3 s

VUVLOL

VIOUT = 0 V

VCC

VIOUT

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Definitions of Accuracy Characteristics

Characteristic Definitions

Sensitivity (Sens). The change in device output in response to a

1 A change through the primary conductor. The sensitivity is the

product of the magnetic circuit sensitivity (G / A) and the linear

IC amplifier gain (mV/G). The linear IC amplifier gain is pro-

grammed at the factory to optimize the sensitivity (mV/A) for the

half-scale current of the device.

Noise (VNOISE). The noise floor is derived from the thermal and

shot noise observed in Hall elements. Dividing the noise (mV)

by the sensitivity (mV/A) provides the smallest current that the

device is able to resolve.

Nonlinearity (ELIN). The ACS770 is designed to provide a linear

output in response to a ramping current. Consider two current

levels, I1 and I2. Ideally, the sensitivity of a device is the same

for both currents, for a given supply voltage and temperature.

Nonlinearity is present when there is a difference between the

sensitivities measured at I1 and I2. Nonlinearity is calculated

separately for the positive (ELINpos ) and negative (ELINneg )

applied currents as follows:

LINpos = 100 (%) × {1 – (SensIPOS2 / SensIPOS1

) }

LINneg = 100 (%) × {1 – (SensINEG2 / SensINEG1

)}

where:

SensIx = (VIOUT(Ix) – VIOUT(Q))/ Ix

and IPOSx and INEGx are positive and negative currents.

Then:

LIN = max( ELINpos , ELINneg )

Ratiometry. The device features a ratiometric output. This

means that the quiescent voltage output, VIOUTQ, and the mag-

netic sensitivity, Sens, are proportional to the supply voltage, VCC.

The ratiometric change (%) in the quiescent voltage output is

defined as:

5 V

IOUTQ(VCC)

IOUTQ(5V)

IOUTQ($V)

=s%)

and the ratiometric change (%) in sensitivity is defined as:

VCC 5 V

=s%)

$Sens($V

Sens(VCCSens(V

Quiescent output voltage (VIOUT(Q)). The output of the device

when the primary current is zero. For bidirectional current flow,

it nominally remains at VCC ⁄ 2. Thus, VCC = 5 V translates into

VIOUT(QBI) = 2.5 V. For unidirectional devices, when VCC = 5 V,

VIOUT(QUNI) = 0.5 V. Variation in VIOUT(Q) can be attributed to

the resolution of the Allegro linear IC quiescent voltage trim,

magnetic hysteresis, and thermal drift.

Electrical offset voltage (VOE). The deviation of the device

output from its ideal quiescent value of VCC ⁄ 2 for bidirectional

sensor ICs and 0.5 V for unidirectional sensor ICs, due to non-

magnetic causes.

Magnetic offset error (IERROM). The magnetic offset is due to

the residual magnetism (remnant field) of the core material. The

magnetic offset error is highest when the magnetic circuit has

been saturated, usually when the device has been subjected to a

full-scale or high-current overload condition. The magnetic offset

is largely dependent on the material used as a flux concentrator.

Total Output Error (ETOT). The maximum deviation of the

actual output from its ideal value, also referred to as accuracy,

illustrated graphically in the output voltage versus current chart

on the following page.

ETOT is divided into four areas:

 0 A at 25°C. Accuracy at the zero current flow at 25°C, with-

out the effects of temperature.

 0 A over Δ temperature. Accuracy at the zero current flow

including temperature effects.

 Full-scale current at 25°C. Accuracy at the full-scale current at

25°C, without the effects of temperature.

 Full-scale current over Δ temperature. Accuracy at the full-

scale current flow including temperature effects.

=s%)

ETOT(IP)

VIOUT(IP) – VIOUT_IDEAL(IP)

SensIDEAL sIP

where

VIOUT_IDEAL(IP) = VIOUT(Q) + (SensIDEAL × IP )

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Output Voltage versus Sampled Current

Total Output Error at 0 A and at Full-Scale Current

Increasing VIOUT

(V)

+IP (A)

Accuracy

25°C Only

Accuracy

25°C Only

Accuracy

25°C Only

Accuracy

0 A

vrOe $Temp erature

Average

VIOUT

–IP (A)

vrOe $Temp erature

Decreasing VIOUT

(V)

IP(min)

IP(max)

Half Scale

Definitions of Dynamic Response Characteristics

Propagation Delay (tPROP). The time interval between a) when

the input current reaches 20% of its final value, and b) when the

output reaches 20% of its final value.

Rise Time (tr). The time interval between a) when the device

reaches 10% of its full scale value, and b) when it reaches 90%

of its full scale value. Both tr and tRESPONSE are detrimentally

affected by eddy current losses observed in the conductive IC

ground plane.

Response Time (tRESPONSE) The time interval between a) when

the applied current reaches 80% of its final value, and b)

when the sensor reaches 80% of its output corresponding to the

applied current.

Temperature Compensation Power-On Time (tTC ). After

Power-On Delay, tPOD , elapses, tTC also is required before a valid

temperature compensated output.

Power-On Delay (tPOD). When the supply is ramped to its

operating voltage, the device requires a finite time to power its

internal components before responding to an input magnetic field.

Power-On Delay, tPOD , is defined as the time it takes for the out-

put voltage to settle within ±10% of its steady state value under

an applied magnetic field, after the power supply has reached its

minimum specified operating voltage, VCC(min), as shown in the

chart at right.

Applied Magnetic Field

Transducer Output

(%)

Propagation Delay, tPROP

Rise Time, tr

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Power-On Reset Voltage (VPOR ) At power-up, to initialize to a

known state and avoid current spikes, the ACS770 is held in Reset

state. The Reset signal is disabled when VCC reaches VUVLOH and

time tPORR has elapsed, allowing output voltage to go from a high

impedance state into normal operation. During power-down, the

Reset signal is enabled when VCC reaches VPORL , causing output

voltage to go into a high impedance state. (Note that a detailed

description of POR and UVLO operation can be found in the

Functional Description section.)

Power-On Reset Release Time (tPORR) When VCC rises to

VPORH , the Power-On Reset Counter starts. The ACS770 output

voltage will transition from a high impedance state to normal

operation only when the Power-On Reset Counter has reached

tPORR and VCC has exceeded VUVLOH .

Undervoltage Lockout Threshold (VUVLO ) If VCC drops below

VUVLOL , output voltage will be locked to GND. If VCC starts

rising, the ACS770 will come out of the locked state when VCC

reaches VUVLOH .

UVLO Enable/Disable Delay Time (tUVLO ) When a falling VCC

reaches VUVLOL , time tUVLOE is required to engage Undervoltage

Lockout state. When VCC rises above VUVLOH , time tUVLOD is

required to disable UVLO and have a valid output voltage.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Functional Description

The descriptions in this section assume:

Temperature = 25°C,

VCC = 5 V,

no output load, and

no significant current flow through the sensor IC.

Voltage levels shown are specific to a bidirectional ACS770,

however the POR and UVLO functionality described also applies

to unidirectional sensors.

The reference numbers section refer to figures 1 and 2.

• Power-Up At power-up, as VCC ramps up, the output is in a

high impedance state. When VCC crosses VPORH (location [1]

in figure 1 and [ 1′ ] in figure 2), the POR Release counter starts

counting for tPORR

. At this point, if VCC exceeds VUVLOH

[ 2′ ], the output will go to VCC / 2 after tUVLOD [ 3′ ] .

If VCC does not exceed VUVLOH [2], the output will stay in

the high impedance state until VCC reaches VUVLOH [3] and

then will go to VCC / 2 after tUVLOD [ 4 ].

• VCC drops below VCC(min) = 4.5 V If VCC drops below VUV-

LOL [ 4′, 5 ] , the UVLO Enable Counter starts counting. If VCC is

still below VUVLOL when the counter reaches tUVLOE

, the UVLO

function will be enabled and the ouput will be pulled near

GND [ 6 ] . If VCC exceeds VUVLOL before the UVLO Enable

Counter reaches tUVLOE [ 5′ ] , the output will continue to be

VCC / 2.

• Coming Out of UVLO While UVLO is enabled [ 6 ] , if

VCC exceeds VUVLOH [ 7 ] , UVLO will be disabled after

tUVLOD , and the output will be VCC / 2 [ 8 ] .

• Power-Down As VCC ramps down below VUVLOL [ 6′, 9 ] , the

UVLO Enable Counter will start counting. If VCC is higher than

VPORL when the counter reaches tUVLOE , the UVLO function

will be enabled and the output will be pulled near GND [ 10 ] .

The output will enter a high impedance state as VCC goes below

VPORL [ 11 ] . If V

CC falls below VPORL before the

UVLO Enable Counter reaches tUVLOE , the output will transition

directly into a high impedance state [ 7′ ].

Power-On Reset (POR) and Undervoltage

Lock-Out (UVLO) Operation

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

tUVLOE

tPORR

tUVLOD

UVLOE

1’ 2’ 4’ 5’ 6’ 7’

3’

5.0

VUVLOH

VPORH

VPORL

VPORH

VPORL

VUVLOL

2.5

High Impedance High Impedance

Slope =

VCC /

Slope =

VCC /

GND Time

Time

GND

VCC

VOUT

5.0

2.5

GND

VOUT

356711

810

Slope =

VCC /

tUVLOE

Figure 1. POR and UVLO Operation: Slow Rise Time case

Figure 2. POR and UVLO Operation: Fast Rise Time case

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Chopper Stabilization Technique

Amp

Regulator

Clock/Logic

Hall Element

Tuned

Filter

Anti-Aliasing

LP Filter

Concept of Chopper Stabilization Technique

When using Hall-effect technology, a limiting factor for

switchpoint accuracy is the small signal voltage devel-

oped across the Hall element. This voltage is dispropor-

tionally small relative to the offset that can be produced

at the output of the Hall sensor IC. This makes it diffi-

cult to process the signal while maintaining an accurate,

reliable output over the specified operating temperature

and voltage ranges.

Chopper stabilization is a unique approach used to

minimize Hall offset on the chip. Allegro employs a

patented technique to remove key sources of the output

drift induced by thermal and mechanical stresses. This

offset reduction technique is based on a signal modula-

tion-demodulation process. The undesired offset signal

is separated from the magnetic field-induced signal in

the frequency domain, through modulation. The sub-

sequent demodulation acts as a modulation process for

the offset, causing the magnetic field-induced signal to

recover its original spectrum at baseband, while the DC

offset becomes a high-frequency signal. The magnetic-

sourced signal then can pass through a low-pass filter,

while the modulated DC offset is suppressed.

In addition to the removal of the thermal and stress

related offset, this novel technique also reduces the

amount of thermal noise in the Hall sensor IC while

completely removing the modulated residue result-

ing from the chopper operation. The chopper stabi-

lization technique uses a high-frequency sampling

clock. For demodulation process, a sample-and-hold

technique is used. This high-frequency operation

allows a greater sampling rate, which results in higher

accuracy and faster signal-processing capability. This

approach desensitizes the chip to the effects of thermal

and mechanical stresses, and produces devices that

have extremely stable quiescent Hall output voltages

and precise recoverability after temperature cycling.

This technique is made possible through the use of a

BiCMOS process, which allows the use of low-offset,

low-noise amplifiers in combination with high-density

logic integration and sample-and-hold circuits.

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Package CB, 5-pin package, leadform PFF

Creepage distance, current terminals to signal pins: 7.25 mm

Clearance distance, current terminals to signal pins: 7.25 mm

Package mass: 4.63 g typical

1.91

321.4

0.5

0.8

1.5

0.5

Perimeter through-holes recommended

1º±2°

5º±5°

14.0±0.2

17.5±0.2

4.0±0.2

3.0±0.2

2.9±0.2

3.5±0.2

10.00±0.10

13.00±0.10

0.51±0.10

4.40±0.10

7.00±0.10

1.9±0.2

1.50±0.10

Branding scale and appearance at supplier discretion

Dambar removal intrusion

For Reference Only; not for tooling use (reference DWG-9111, DWG-9110)

Dimensions in millimeters

Dimensions exclusive of mold flash, gate burrs, and dambar protrusions

Exact case and lead configuration at supplier discretion within limits shown

Standard Branding Reference View

N = Device part number

T = Temperature code

A = Amperage range

L = Lot number

Y = Last two digits of year of manufacture

W = Week of manufacture

= Supplier emblem

Branded

Face

0.381+0.060

–0.030

NNNNNNN

TTT - AAA

LLLLLLL

YYWW

PCB Layout Reference View

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

5º±5°

23.50±0.5

2.75±0.10

1.50±0.10

14.0±0.2

4.0±0.2

3.0±0.2

2.9±0.2

3.5±0.2

13.00±0.10

4.40±0.10

10.00±0.10

0.51±0.10

7.00±0.10

1.9±0.2

1.91 .075

0.8 .031

1.5 .059

Recommended PCB Layout View

0.381+0.060

–0.030

NNNNNNN

TTT - AAA

LLLLLLL

YYWW

Branding scale and appearance at supplier discretion

Dambar removal intrusion

For Reference Only; not for tooling use (reference DWG-9111, DWG-9110)

Dimensions in millimeters

Dimensions exclusive of mold flash, gate burrs, and dambar protrusions

Exact case and lead configuration at supplier discretion within limits shown

Standard Branding Reference View

Branded

Face

N = Device part number

T = Temperature code

A = Amperage range

L = Lot number

Y = Last two digits of year of manufacture

W = Week of manufacture

= Supplier emblem

Package CB, 5-pin package, leadform PSF

Creepage distance, current terminals to signal pins: 7.25 mm

Clearance distance, current terminals to signal pins: 7.25 mm

Package mass: 4.63 g typical

Thermally Enhanced, Fully Integrated, Hall Effect-Based

High Precision Linear Current Sensor IC with 100 μ Current Conductor

ACS770xCB

Allegro MicroSystems, LLC

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Allegro MicroSystems, LLC reserves the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be required to

permit improvements in the per for mance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that

the information being relied upon is current.

Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of

Allegro’s product can reasonably be expected to cause bodily harm.

The in for ma tion in clud ed herein is believed to be ac cu rate and reliable. How ev er, Allegro MicroSystems, LLC assumes no re spon si bil i ty for its

use; nor for any in fringe ment of patents or other rights of third parties which may result from its use.

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