Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N3810L
Silicon PNP Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3810LJ)
• JANTX level (2N3810LJX)
• JANTXV level (2N3810LJV)
• JANS level (2N3810LJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Matched Dual transistors
• PNP silicon transistor
Features
• Hermetically sealed TO-78 metal can
• Also available in chip configuration
• Chip geometry 0220
• Reference document:
MIL-PRF-19500/336
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
Volts
Collector-Base Voltage VCBO 60
Volts
Emitter-Base Voltage VEBO 5
Volts
Collector Current, Continuous IC 50
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C
PT
300 one section
600 both sections
1.71one section
3.43 both sections
mW
mW/°C
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3810L
Silicon PNP Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100 µA 60
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 60 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
10
10
10
µA
nA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
10
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE2
hFE3
hFE4
hFE5
hFE6
hFE3-1/hFE3-2
IC = 10 µA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
TA = -55°C
IC = 100 µA, VCE = 5 Volts
100
150
150
125
60
0.9
450
450
1.0
Base-Emitter Voltage
VBE
|VBE1-VBE2|1
|VBE1-VBE2|2
|VBE1-VBE2|3
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 10 µA
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 10 mA
0.7
5
3
5
Volts
mVolts
mVolts
mVolts
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 100 µA, IB = 10 µA
IC = 1 mA, IB = 100 µA
0.7
0.8 Volts
Collector-Emitter Saturation
Voltage
VCEsat1
VCEsat2
IC = 100 µA, IB = 10 µA
IC = 1 mA, IB = 100 µA
0.20
0.25 Volts
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3
www.SEMICOA.com
2N3810L
Silicon PNP Transisto
r
Data Sheet
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
|hFE2|
VCE = 5 Volts, IC = 500 µA,
f = 30 MHz
VCE = 5 Volts, IC = 1 mA,
f = 100 MHz
1
1
5
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA,
f = 1 kHz 150 600
Open Circuit Output Capacitance COBO VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 5
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 8
pF
Noise Figure
NF1
NF2
NF3
VCE = 10 Volts, IC = 100 µA,
Rg = 3 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
7
3
2.5
dB
Noise Figure (wideband) NF VCE = 10 Volts, IC = 100 µA,
Rg = 3 kΩ
10 Hz < f < 15.7 kHz
3.5 dB
Short Circuit Input Impedance hie V
CB =10V, IC =1mA, f =1kHz 3
30 kΩ
Open Circuit Output Admittance hoe V
CB =10V, IC =1mA, f =1kHz 5
60 µΩ
Open Circuit reverse Voltage Transfer
Ratio
hre VCB =10V, IC=100µA, f=1kHz
25x10-4
