FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a + + + + + + HH FH + + + oF FH Ht OH 4 OF OF OH OFF & *K te (T, = 23C) wm 64 id tt (Te = 28C) He B a) BA mit | Vooo | Vaso! To [ Po | 1% | tooo exit Jaro Risen Abwwl <4 7 A | Ae | Be | hey | leg | Joa, | Coo cad | (Vv) | ) | Gna) | mw) | Co) | (HA) [Veatv) Voe(V)|fc(mA)| Vea(V)|te(ma)| Age | (GQ) \o<10-+)| Ga) | (Me) | @F) | (a) | 2SB310 [ts | SW Ge.DB| 140| 1 [sa | 488] 90 | 220| -0.5] 62 |*ov|*a al 4 | 1A re 103 rall| # " | 180] -1 | -10a | 20".] 90 | -220|-0.5] 62 [*5y/* ral 4 | 14 fare 103 siz] + " | 14o| 1 {-8a | 43.8) 90 | 220] 0.5] 27 |%85,| 8A 103 #313] 9 " | 180} 1 |10a| 48.) 90 | 220] 0.5} 27 1%P Gy] 8A 103 3i4| ip | PA Ge.A | 30 500| 3w| so | -100]/ 30| 45 | 2 | -200 96 * 315|= 3| AF , | -16 ~300| 150 | 65. | 14 | 12 3 | 1 | 50 | mo] 1.5 | 20 12A 1 3i6| * |PA 1 | 16 300{ 150 | a5 | 14 | 12{ 6 | -1 | -150 12A *317{ 9 * | -16 300| 250 | 85 | -14 | 12] 60 | 1 | 150) 1A 318 (ati) Ge.D| 60| ~1 |-5A| 20") 100 |-1ma} 40] 100 | 2|-14]| 8 | 500 2* 102 319| |Sw | 100} 1 | -5A| 20" 100 |-ima| 40 | 100 | 2|-1A] ~5 | 500 3* 102 320] 7, | 100] = 2 |5a [2081 100 |i1mal 40] 100 | ~2|-1a] 5 | 500 | fETSey votes * 102 321|% | LN Ge.A| 12| ~12| -50] 40 | 75 | 4 | ~12 -1.5] 0.5 | 100 | 4000] 6 | 20 [MP 3aB. snap 2 322| | AF {-12|-12]~50] 40 | 75 | 4 | 22 -1.5| 0.5 | 50 | 3000] 5 | 19 1 323) y | -12|-121-50] 40] 75 | -4 | ~12 -1.5| 0.5 | 100 | 4000] 6 | 20 1 394 |k FPA + 32{ -10/-14 | 200 | 90 | -10;} 10} 53 |"*>y/-o0.3a] 2 | 10 tie 12A 325 | i | SW | 120[ -50 |-o.6a/4-8] 85 | -20/ 5 | 50 | 2 | 50 93 326/68 Sl PA | 30 | -18|-s00| 225 | 85 | -1o | -30{ 6 |-1|-2}-5 | 1 3 BAA #327] {| ~30] 15|S00| 225 | 85 | 10/ 30{ 110 1} -2)7-5] 1 3.3 84A/ 328} " | 25|-10|-200| 150 | 85 | ~10|-15] 72 |}-1]/-2]-6/; 1 2 19A r 329| " [| -25 | 10] 200] 150 { 85 | -10 | -15] 100 |-1}-2}~6] 1 2 19A 330; | sw | -110[ -50]~-150{ 22 | 85 | -20/ -so] 35 |-1]-20}-57] 1 0.5 S4A * 31/8 wl * | 40 | ~20|-15A| 808] 100 |~4ma] ~40] 70 | 2 | ~5A 109 332] 9 , r | 60 | 40 | 15a |, 80.) 100 |-4ma] -60] 60 | 2 | -5A 109 333] 9 " | 80| 40|-15a|80W ) 100 |-4ma] -s0] 60 | 2 |5A 109 334) , | 100| ~60 | -15A|.20..) 100 |4mA] 100] 40 | 2 | -5A 109 + 335|#% F] AF | -2 | -10] -60] 83 | 75 | 10 | 10 [36~110) -1 |e.a| -6 | 1 | 70 | 2800 | 2.6 | 10 4 336; |PA > |-2 | -10; -60| 93 | 75 |-10) 10} 86 | 1 | -60 4 "337; | | 40{ -10|-74 | 308) 100 |1maj -30] 90 | -2 |-1A] 2 | 1A 0.3 103 338} 7 " | ~60| -10]-7A| 50") 90 f-1ma| 30] 75 | -4 | 1A 103 339[ 9" y | ~80 [ 50 |-10a| 30%.) 90 | -250( ~30{ 75 | -4 [-1a] ~4 | 1A 0.25 103