2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging 2SD1047 2SD1047 TO-3P Tube April 2011 Doc ID 018729 Rev 1 1/10 www.st.com 10 Electrical ratings 1 2SD1047 Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCBO Collector-base voltage (IE = 0) 200 V VCEO Collector-emitter voltage (IB = 0) 140 V VEBO Emitter-base voltage (IC = 0) 6 V Collector current 12 A ICM Collector peak current (tP < 5 ms) 20 A Ptot Total dissipation at Tc = 25 C 100 W Tstg Storage temperature -65 to 150 C 150 C Value Unit 1.25 C/W IC TJ Table 3. Symbol Rthj-case 2/10 Parameter Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case ____max Doc ID 018729 Rev 1 2SD1047 2 Electrical characteristics Electrical characteristics (Tcase = 25 C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 200 V 0.1 A IEBO Emitter cut-off current (IC = 0) VEB = 6 V 0.1 A V(BR)CEO(1) Collector-emitter I = 50 mA breakdown voltage (IB = 0) C 140 V V(BR)CBO Collector-base breakdown IC = 100 A voltage (IE = 0) 200 V 6 V Emitter-base breakdown voltage (IC = 0) IE = 1 mA Collector-emitter saturation voltage IC = 5 A IC = 7 A IB = 500 mA IB = 700 mA 0.5 0.7 V V VBE Base-emitter voltage VCE = 5 V IC = 5 A 1.3 V hFE DC current gain IC = 1 A IC = 5 A VCE = 5 V VCE = 4 V fT Transition frequency IC = 0.5 A VCE = 12 V 20 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 150 pF Turn-on time VCC = 60 V IC = 5 A 0.22 s Storage time IB1 = -IB2 = 0.5 A 4.3 s 0.5 s V(BR)EBO(1) VCE(sat)(1) 60 200 50 Resistive Load ton tstg tf Fall time 1. Pulse duration = 300 s, duty cycle 1.5 % Doc ID 018729 Rev 1 3/10 Electrical characteristics 2.1 4/10 2SD1047 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Output characteristics Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter voltage Figure 7. Base-emitter voltage Doc ID 018729 Rev 1 2SD1047 2.2 Electrical characteristics Test circuit Figure 8. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Doc ID 018729 Rev 1 5/10 Electrical characteristics Table 5. 2SD1047 TO-3P mechanical data mm Dim. Min. Max. A 4.6 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 6/10 Typ. 3.50 L2 18.20 P 3.10 18.40 3.30 Q 5 Q1 3.80 Doc ID 018729 Rev 1 18.60 2SD1047 Electrical characteristics Figure 9. TO-3P drawings Doc ID 018729 Rev 1 7/10 Package mechanical data 3 2SD1047 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 8/10 Doc ID 018729 Rev 1 2SD1047 4 Revision history Revision history Table 6. Document revision history Date Revision 12-Apr-2011 1 Changes Initial release. Doc ID 018729 Rev 1 9/10 2SD1047 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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