MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N-Channel http://onsemi.com Features 2 SOURCE * AEC-Q101 Qualified and PPAP Capable * S Prefix for Automotive and Other Applications Requiring Unique * 3 GATE Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit 225 1.8 mW mW/C RqJA 556 C/W TJ, Tstg -55 to +150 C Gate Current 3 1 2 SOT-23 (TO-236) CASE 318 STYLE 10 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. MARKING DIAGRAM 6x M G G 1 6x M G = Device Code x = U for MMBFJ309L x = T for MMBFJ310L, SMMBFJ310L = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping MMBFJ309LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBFJ310LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBFJ310LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBFJ310LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 5 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309L, MMBFJ310L, SMMBFJ310L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS -25 - - Vdc IGSS - - - - -1.0 -1.0 nAdc mAdc MMBFJ309 MMBFJ310, SMMBFJ310 VGS(off) -1.0 -2.0 - - -4.0 -6.5 Vdc MMBFJ309 MMBFJ310, SMMBFJ310 IDSS 12 24 - - 30 60 mAdc VGS(f) - - 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 - 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| - - 250 mmhos Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss - - 5.0 pF Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss - - 2.5 pF Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en - 10 - nV Hz OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc) Gate Reverse Current (VGS = -15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL-SIGNAL CHARACTERISTICS http://onsemi.com 2 MMBFJ309L, MMBFJ310L, SMMBFJ310L 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = -55C 50 50 +25C IDSS +25C 40 40 30 30 +150C 20 20 +25C -55C 10 10 +150C -5.0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 10 1.0 k Yfs Yfs 10 k 100 1.0 k Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 120 RDS 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 100 0.01 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 9.0 ID, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate-Source Voltage http://onsemi.com 3 0 0 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE ( mhos) CAPACITANCE (pF) Yfs , FORWARD TRANSCONDUCTANCE (mhos) Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage MMBFJ309L, MMBFJ310L, SMMBFJ310L 24 |S12|, |S22| 3.0 0.060 1.00 2.4 0.79 0.39 S22 VDS = 10 V ID = 10 mA TA = 25C 0.048 0.98 S21 Y11 18 1.8 Y21 12 1.2 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 0.55 0.15 100 1000 Figure 4. Common-Gate Y Parameter Magnitude versus Frequency q21, q11 180 50 40 160 30 150 20 140 10 200 300 500 f, FREQUENCY (MHz) q11, q12 -20 120 q21, q22 -40 86 -40 100 85 -60 80 -120 84 -80 60 -100 40 -120 20 100 0 q11 -20 q21 700 1000 Figure 5. Common-Gate S Parameter Magnitude versus Frequency q12, q22 -20 87 q22 170 0.036 0.96 S11 Y22 6.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 q21 q22 -20 -60 -80 -40 -100 q12 q11 130 0 100 -140 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) -60 q12 -160 83 -180 700 q21 -200 82 1000 Figure 6. Common-Gate Y Parameter Phase-Angle versus Frequency VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) q11 700 -80 -100 1000 Figure 7. S Parameter Phase-Angle versus Frequency http://onsemi.com 4 0.90 MMBFJ309L, MMBFJ310L, SMMBFJ310L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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