MITSUBISHI Nch POWER MOSFET FK10VS-9 HIGH-SPEED SWITCHING USE FK10VS-9 OUTLINE DRAWING Dimensions in mm ia 10.5MAX. ; 5 \ > eI \ z not be dS \ + t \ | wo 1) 5 3 Z ne 08 3 Bole oa UU | J e 5! 0.5 ~ nope 0:8 uw + i: a GATE 2 DRAIN @VDSS cere cere tee enter ee eee ene - 450V 3. SOURCE 4 DRAIN @ros (ON) (MAX) Re een eh we eee eee 0.92Q DO recent eee ere eee eee eee 10A Integrated Fast Recovery Diode (MAX.) ---: 150ns T0-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS (Te = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Ves = 0V 450 Vv Vass Gate-source voliage Vos = OV 30 Vv Ib Drain current 10 A Ibm Drain current (Pulsed) 30 A is Source current 10 A IsM Source current (Pulsed) 30 A Po Maximum power dissipation 125 Ww Teh Channel temperature 56 ~ +150 C Tstg Storage temperature ~55 ~ +150 C = Weight Typical value 1.2 g MITSUBISHI 3-107 ELECTRIC MITSUBISHI Nch POWER MOSFET FK10VS-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Teh = 25C) Symbol Parameter Test conditions = Limits Unit Min. Typ. Max. V (BR) DSS | Drain-source breakdown voltage | lb = 1mA, Vas = OV 450 _ Vv V (BA) GSS | Gate-source breakdown voltage | IG = +100HA, Vos = OV +30 _ _ Vv lass Gate leakage current Vas = +25V, VDS = OV _ _ +10 LA Ipss Drain current Vbs = 450V, Vas = 0V _ _ 1 mA VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 Vv rDS(ON) | Drain-source on-state resistance | ID = 5A, VGS = 10V _ 0.70 0.92 Q VDS (ON) | Orain-source on-state voltage | ID = 5A, VGs = 10V _ 3.50 4.60 Vv | yts | Forward transfer admittance | ID = 5A, VDS = 10V 3.3 55 ~ S Ciss input capacitance _ 1100 _ pF Coss Output capacitance VDS = 25V, V@S = OV, f = 1MHz 130 _ pF Crss Reverse transfer capacitance _ 20 ~~ pF ic (on) Turn-on delay time _ 20 ns 5 _ t Rise time VDD = 200V, Ib = 5A, Vas = 10V, RGEN = Res = 5002 0 ms td (off) Turn-off delay time _ 95 _ ns tf Fall time _ 35 _ ns VsD Source-drain voltage Is = 5A, VGS = OV _ 1.5 2.0 Vv Rith (ch-c) | Thermal resistance Channel to case _ _ 1.0 C/W tre Reverse recovery time Is = 10A, dis/dt = -100A/us _ 150 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 3 = 2 tw=10us co 160 = ig & a 7 Zz 5 Q 120 5 3 < wo 2 in a C460 a 2 80 37 a Zz 5 oc < 3 i ia = 40 a 2 a 10-1} 7 05 50 100 150 200 596 23 57101 23 57102 23 57108 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) 3 - 108 9 MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FK10VS-9 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) VGs = 20 Gs=20V 10 ; 20 ~ oy 40 VGs=20V 10V 6Y 7V Zz 6 z 2 2 Ee 12 Tc = 25C - a Pulse Test 6 f ae) 8 5 Te = 25C 6 oO Pulse Test z Zz Qa 4 4a 0 7 0 10 20 30 40 50 0 4 8 12 16 20) DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) it Te = 25C To = 25C wt i Pulse Test we Pulse T E > { e a bs iyl 3 8 VGS = TOV 5S og 20V w 2 w 7 2 oy Su 38 oO 3 Zz oO < < OF Or Zo ze zQ =< c> aw a om 0 . 0 4 8 12 16 20 107 23 57100 23 5710' 23 57102 GATE-SOURCE VOLTAGE VGs (V) DRAIN CURRENT io (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 10! Tc = 28C Vos = 10V VbSs = 50V Pulse Test => Pulse Test < cm 2 pi 3 z2> 2 2 ft io Cw ra FO 100 a og 2 acct 7 5 Ze z BE 5 < 3 x ard 3 2 o ~- 10~ 0 4 8 12 16 20 107 23 67100 23 #5 710 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) MITSUBISHI 3 - 109 ELECTRIC MITSUBISHI Nch POWER MOSFET FK10VS-9 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 2 103 Ciss 7 Toh = 25C 103 VoD = 200V 7 _ 38 VGS = 10V ~ 5 @ = Res = 50Q i = 3 w 3 3 5 = Eo 192 102 O@ 7? Zz <o = 7? ad 5 = < 6 5 Og 3 E 6 2 Sz 4 Tol 25C 2 41Q1 ens o f= IMHz Vi os 6 _ 103 23 5710023 5710123 57102 23 107 2 3 5 710 23 5710 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN CURRENT 1p (A) GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE VS.GATE CHARGE FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) s * 0 VGS = OV < Le ton _ Pulse Test S$ 16 = 32 = wo ws = 100V a ke e 12 qo 24 Q a > 5 o 8 2 16 & a 2 9 5 a 4 Q 8 i << 0 % 40 60 80 100 0 08 16 24 #32 420 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE Vso (V) ~ ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS. Go| CHANNEL TEMPERATURE CHANNEL TEMPERATURE =/a (TYPICAL) (TYPICAL) 5|zZ 10! Bla 7 Vas=10V Vos = 10V 12 sh tp = 12lo qa lo = Tn Wy iy Pulse Test Oo ~ Sig i> 2 =z 3 uo | we Nit 2 c= Gls =8 a | iy > uw ix 10909 5 ey ce gla ? So O/B 5 OF =z uo w S15 3 uw ul tu be ziQ 2 5 a ec 35 2 8) 2 19-71 Z/z 0 50 100 150 200 250 -50 Q 50 100 150 els Sis CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C} 3-110 MITSUBISHI ELECTRIC DRAIN-SOURCE BREAKDOWN VOLTAGE V (8m) Dss (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (ar) 08s (25C) trr (44s) REVERSE RECOVERY TIME BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = OV ID = tmA ~50 0 50 700 150 CHANNEL TEMPERATURE Tch (C) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 3 VG6s = OV 3 2 vo = 250V | 4 IS = 10A sew 2 10? 7 102 NWO us 5 3 2 10! 2 REVERSE RECOVERY CURRENT TRANSIENT THERMAL IMPEDANCE = 2th (chc) (C/W) mo Teh = 25 mmm Ton = 150C 17 7 5 5 1 57102 2 3 5 7103 ot 2 3 SOURCE CURRENT dis/dt (A/us) Inv (A) = Ne ons Nw aw? sw NIG Ol = Qo og il REVERSE RECOVERY TIME _ tr (ys) 0. 0.1 = MITSUBISHI Nch POWER MOSFET FK10VS-9 HIGH-SPEED SWITCHING USE DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 108 102 <= 7 | disidt = -100A Aus 5 5 Vos = OV = VoD = 250V 5 os 3 3 # 2 2 & oO 102 10! & 7 7 & 5 5 8 tt 3 3 4 v9) 2 Te= 25C [2 === Ton = 150C > 10! oo ly 100 62357101 23 571028 SOURCE CURRENT Js (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Pulse 10-423 5710323 5710223 6710123 5710923 5710' 23 57102 PULSE WIDTH tw (s) ate MITSUBISHI ELECTRIC 3-191