VS-ST303SP Series
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Inverter Grade Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 300 A
VDRM/VRRM 400 V, 800 V, 1200 V
VTM 2.16 V
ITSM at 50 Hz 3000 A
ITSM at 60 Hz 3150 A
IGT 200 mA
TJ-40 °C to 125 °C
TC65 °C
Package TO-118 (TO-209AE)
Circuit configuration Single SCR
TO-118 (TO- 209AE)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
300 A
TC65 °C
IT(RMS) 471
A
ITSM
50 Hz 7950
60 Hz 8320
I2t50 Hz 316 kA2s
60 Hz 288
VDRM/VRRM 400 to 1200 V
tq10 to 20 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST303S
04 400 500
5008 800 900
12 1200 1300
VS-ST303SP Series
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 670 470 1050 940 5240 4300
A
400 Hz 480 330 1021 710 1800 1270
1000 Hz 230 140 760 470 730 430
2500 Hz 35 - 150 - 90 -
Recovery voltage VR50 50 50 V
Voltage before turn-on VDVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 406540654065°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 300 A
65 °C
Maximum RMS on-state current IT(RMS) DC at 45 °C case temperature 471
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
7950
t = 8.3 ms 8320
t = 10 ms 100 % VRRM
reapplied
6690
t = 8.3 ms 7000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
316
kA2s
t = 8.3 ms 288
t = 10 ms 100 % VRRM
reapplied
224
t = 8.3 ms 204
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3160 kA2s
Maximum peak on-state voltage VTM ITM = 1255 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 2.16
V
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.44
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.46
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.57
m
High level value of forward slope
resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.56
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt 1000 A/μs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 0.80
μs
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/μs
VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs
10
maximum 20
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST303SP Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/μs
Maximum peak reverse and off-state leakage
current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
10 A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5
Maximum DC gate current required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to +125 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance, junction to case RthJC DC operation 0.10 K/W
Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03
Mounting force, ± 10 % Non-lubricated threads 48.5
(425)
N · m
(lbf · in)
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-118 (TO-209AE)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
TJ = TJ maximum K/W
120° 0.013 0.014
90° 0.017 0.018
60° 0.025 0.026
30° 0.041 0.042
VS-ST303SP Series
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST303S Se rie s
R ( D C ) = 0. 10 K/ W
thJC
40
50
60
70
80
90
100
110
120
130
0100200300400500
DC
30°
60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST3 0 3 S Se r i e s
R (DC) = 0.10 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.01K
/W-DeltaR
thS
A
0.3K
/W
0.5K
/W
0.2K/W
0.16K/W
0.12K/W
0.06K/ W
0.08K
/W
0.03K/W
0
100
200
300
400
500
600
0 50 100 150 200 250 300
180°
120°
90°
60°
30°
RM S Li m it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST303S Series
T = 1 2 5 ° C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.01K
/W-DeltaR
thS
A
0.3K/W
0.5K
/W
0.2K/W
0.12K
/W
0.06K/W
0.03K
/W
0
100
200
300
400
500
600
700
800
900
0 50 100150200250300350400450500
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 0 3 S Se r i e s
T = 125°C
J
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Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
3000
3500
4000
4500
5000
5500
6000
6500
7000
110100
Numb er Of Equa l Amplitud e Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST3 0 3 S Se r i e s
At Any Rated Load Condition And With
Ra t ed V App lie d Follo w ing Surg e .
RRM
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Init ial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST3 0 3 S Se r i e s
Maximum Non Repetitive Surge Current
100
1000
10000
12345678
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 2 5 ° C
J
ST3 0 3 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedance Z (K/W)
St e a d y St a t e V a l u e
R = 0 . 1 0 K/ W
(DC Operation)
thJC
ST3 0 3 S Se r i e s
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
I = 500 A
300 A
200 A
100 A
50 A
Maximum Reverse Recovery Charge - Qrr (µC)
ST3 0 3 S Se r i e s
T = 12 5 ° C
J
TM
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/ µs)
I = 500 A
300 A
200 A
100 A
50 A
Maximum Reverse Recovery Current - Irr (A)
ST3 0 3 S Se r i e s
T = 125 °C
J
TM
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Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu l se Ba se w id t h ( µs)
Pea k O n-st a t e C urre n t ( A)
1000
1500
200
500
Snub b e r c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
2000
ST3 0 3 S Series
Sinusoidal pulse
T = 40°C
C
tp
1 E1 1 E2 1 E3 1 E4
50 Hz
400 100
Pu l se Ba se w id t h ( µ s)
1000
1500
200
500
ST3 0 3 S Se r i e s
Si n u so i d a l p u l se
T = 6 5 ° C
C
Sn u b b e r c i r c u i t
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
100
1500
200
Pu l se Ba se w id t h ( µ s)
Peak On-state Current (A)
2500
400
1000
50 Hz
500
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
ST3 03 S Se r i e s
Trapezoidal pulse
T = 4 0 ° C
di/dt = 50A/µs
C
2000
1E1 1E2 1E3 1E4
50 Hz
400 100
1000
1500
200
Pulse Ba se w id t h ( µs)
500
Snubber circuit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
ST3 0 3 S Se r i e s
Trapezoidal pulse
T = 65°C
di/dt = 50A/µs
C
2000
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
200
Pu l se Ba se w id t h ( µ s)
Peak On-state Current (A)
2000
Snub ber circuit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
ST3 0 3 S Se r i e s
Trapezoidal pulse
T = 4 0 ° C
d i/ d t = 100A/ µs
C
tp
500
1 E1 1 E2 1 E3 1 E4
50 Hz
400
100
1000
1500
200
Pu l se Ba se w id t h ( µs)
ST3 0 3 S Series
Trapezoidal pulse
T = 6 5 ° C
di/ d t = 100A/ µs
C
Sn u b b e r c i r c u i t
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
2000
tp
500
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Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E5
1 E1 1 E2 1 E3 1 E4
Pulse Ba sew id t h ( µs)
20 joules p er pulse
2
1
Peak On-state Current (A)
0.5
10
5
3
0.4
ST3 0 3 S Se r i e s
Sinusoid al p ulse
tp
1E1 1E2 1E3 1E4
Pulse Ba sew id t h ( µ s)
20 joule s p er p ulse
2
1
0.5
10
5
ST3 0 3 S Se r i e s
Rectangular pulse
di/dt = 50A/µs
tp
3
0.4
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj= - 4 0 ° C
(1) (2)
Instant a neous Ga te Current (A)
In st a n t a n e o us G a t e V o l t a g e ( V )
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
rated d i/ dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
De vic e: ST303S Series
(4)
Frequency Limited by PG(AV)
VS-ST303SP Series
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95080
- Thyristor
- Essential part number
- 3 = fast turn-off
- S = compression bonding stud
- Voltage code x 100 = VRRM
- P = stud base 3/4" 16UNF-2A
- Reapplied dV/dt code (for tq test condition)
-t
q code
- 0 = eyelet terminals
1 = fast-on terminals
dV/dt - tq combinations available
dV/dt (V/µs) 200
10
15
tq (µs) FN
FL
20 FK
20 FK
up to 800 V
tq (µs)
only for
1000/1200 V
(see Voltage Ratings table)
(gate and auxiliary cathode leads)
(gate and auxiliary cathode leads)
Device code
51 32 4 6 7 8 9 10 11
ST 30 3 S 12 P F K 0 P
1- Vishay Semiconductors product
11 - None = standard production
- P = lead (Pb)-free
VS-
2
3
4
5
6
7
9
10
8
Document Number: 95080 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 02-Aug-07 1
TO-209AE (TO-118)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Note
(1) For metric device: M24 x 1.5 - length 21 (0.83) maximum
Red cathode
Red silicon rubber
10.5 (0.41) NOM.
245 (9.65) ± 10 (0.39)
White gate
4.3 (0.17) DIA.
Ceramic housing
White shrink
47 (1.85)
MAX.
245 (9.65)
255 (10.04)
38 (1.50)
MAX. DIA.
22 (0.87) MAX.
21 (0.82) MAX.
SW 45
Flexible leads
4.5 (0.18) MAX.
C.S. 50 mm2
(0.078 s.i.)
Red shrink
49 (1.92) MAX.
3/4"16 UNF-2A (1)
27.5 (1.08)
MAX.
Fast-on terminals
AMP. 280000-1
REF-250
9.5 (0.37) MIN.
22 (0.86) MIN.
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