MS I ELECTRONICS INC 35E D 5656466 0000386 T EANSI T- O7-19 HERMETICALLY SEALED GLASS PACKAGED TUNING DIODES LM] &) ) elect ABRUPT - HYPERABRUPT U! ELECTRICAL CHARACTERISTICS (Ta= 259 C unless otherwise noted) + APPLICATIONS FOR USE TO 2.5 GHz VERY HIGH Q PREDICTABLE TRACKING Orode Cap ICT} RATIO ase AATIO ase RATIO aae RATIO ase RATIO a4e YP TYPE 10% @4V/1 MHz TYPE C2/20 50 MHz vO C2/C20 50 MHz TYPE C2/C30 = 50 MHz C2/C30 50 MHz NO C4iC25 50 MHz oF NO minityp min/max min NO min/typ min Na. min/typ min . minftyp pF 18 SQ1213A 2.2/2.7 1800 18 22 G702A 1.7/2.2 709 SQ1214A 2.3/2.8 = 1400 801714 2.2/2.6 1400 22 2 SQI21SA = 2.4/2.8 = 1300 Sais = 2.9/2.2 1300 27 33 Ge0jA 1.7/2.2 600 SQI216A =-.2.5/3.0 1200 saiie? 2.4/2.8 1200 33 39 GEO4A 1.8/2.4 600 SQ1217A = 2.5/3.0 1100 SQ1717) 2.4/2.8 1100 38 42 SQ1218A =. 2.5/3.0 1000 sais = 2.5/2.9 1000 47 26 GEO0SA = s-11:8/2.4 600 SQ1219A = -2.6/3.1 1000 Sai7t9 = -2.5/2.9 1000 56 6a MV1620 2.0/2.5 300 GH06A = 1.9/2.4 600 SQt220A 2.7/3.1 1000 Sai720 2.7/3.1 1000 68 a2 Mv1622 2.0/2.5 300 $1222 2.9/3.2 1000 Saiz = 2.8/3.2 1000 82 100 MV1624 2.0/2.5 300 GEI0A = -1:9/2.4 600 $Q1224A =. 2.9/3.2 1000 801724 2.8/3.1 1000 10.0 120 MV1626 2.0/2.5 300 satz26A 2.9/3.2 900 Sat726 2.8/3.1 seo 120 150 MV1628 =-.20/2.5 250 GEISA = 2.0/2.5 600 SQi228A =- 2.9/3.2 00 $at728 2.8/3.1 900 mve30 1.8/2.0 30 15.0 180 MV1630 2.0/2.6 250 $21230A 2.9/3.2 900 8017300 2.9/3.1 00 Mv831 1,8/2.0 25 180 200 MV1632 (2.0/2.6 250 $Q1232A 2.9/3.2 B00 $01732 2.9/3.1 800 20.0 220 MV1634-2:0/2.6 250 G522A 2.0/2.5 500 $01234A = 3.0/3.3 800 $01734 2.9/3.2 800 MV832 1.8/2.1 25 220 270 MV1636 0 2:0/2.6 200 $01236A = 3.0/3.3 800 $ai736 = 2.9/3.2 800 MV833 1.8/2.1 25 27.0 330 MV1638 2.0/2.6 200 SQ1238A = 3.0/3.3 700 $0738 (2.9/3.2 700 MVE (1.9/2.2 20 33.0 390 MV1640 2.0/2.6 200 $0740 2.9/3.2 600 MV635 1.9/2.2 20 39.0 470 MV1642 2.0/2.7 200 $ai742 = 2.9/3.2 500 MV836 1.9/2.2 15 47.0 560 MV1644 (2.0/2.7 150 $at744 = -2,9/3.2 450 MV837 1.9/2.2 15 560 68e MV1646 2.0/2.7 150 sai746 = 2.9/3.2 300 MV838 2.0/2.2 15 68.0 820 MV1648 (2.0/2.7 150 sai74g =-2,9/3.2 300 MvV839 2,0/2,2 10 820 1000 MV1650 = (2.0/2.7 150 $a1750 2,9/3,2 300 Mv840 2.0/2.2 10 1000 VA {min} 20 Vdc In @ 10 uAde 3 Vae IR - 10 wAde 30 Vde @1R = 10 vAde 30 Vdc @ IR = 10 uAde 30 Vde @ IR - 10 vAde 0-02 uAde @ VR - 25 Vide DO2uAdc@VR 25 Vde IR (max) EVR - .2uAdc @ VR - 25 AR (max OlvuAde @VR 15 Vde 05 uAdce & VR - 20 Vde 2D uAdc @TA = 150C 20 uAde @T A= 150C 0.2uAdc @ VR - 25 Vie oy Tec! 300 ppm/oC 300 ppm PC 300 ppm/C 300 ppm/?c 300 ppm/or To Case oa? DO 35 Minature 00 7 po? BO? 188 20 VOLTS aes GENERAL SPECIFICATIONS __eey TYPE RATIO} ase no cztz = 20 MHz (25 C unless noted) ive min 1200 | Mv1652 26 250 RATING SYMBOL VALUE Qiode Cap 1500, MvT54 76 250 Reverse Vottage VR As SPECIFIED ict W800 | MV16S5 26 200 Junction Temperature Tj +1750C Max ast MHz 7000 | MV1655 26 200 Storage Temperature Tstg -65C to 200C 2200 | MV1660 26 150 + 10% Linear Power Derating 4 mW/oc = 2500 MV16623 23 150 ~ ef roo | MVvi66a3 na 100 po-35 | MINOO-7] BO-7 00-14 330.0 | svie6s3 23 100 Device Dissipation (mW Max) Pp 400 250 400 500 - Case Capacitance (pf Typ} cc 0.10 0.15 0.2 9.3 VR (mnt 20 Vde @ IR = 10 uAde MV 1652/60 Series Inductance (nhy Typ) Ls 1.5 3.0 5.0 5.0 15 Vide @ IR = 10 vAde MV1662/66 a (mas) 01 uAde @ VR = 15 Vdc MV1852/60 max 01 uAde @ VR = 10 Vde MV1662/66 Tee 300 ppc PACKAGE CHARACTERISTICS - CATHODE Case DO 14 ee N Total Diode Capacitance measured at 1 MHz and VR specified c_ p> ? 1, 3 To order devices with CT Nom+ 50% or_ 2 0% add Suttix Bor | | t ~ = C respectrely -_ M __---}- L jo M _.] o- . (1) Capacitance Temperature Coefficient (typ) @ 4V/1 MHz For other types not listed he (2) For SQ1716, C4 = 3pt nom po-35 Min 00-7 00-7 DO-14 your representative or the f: (3) Tuning Ratio @ C2/C15 for MV1662/66 requirements, OIM | Min | Max Min | Max | Min | Max Min | Max t 180 | 0.150 | 0.176 0.300 0,300 S M | 1.00 1.000 1.000 1,000 ed a 0.019 | 0.021 | 0.014 | 0.016 | 0.019 | 0.021 | 0.019 | 0.021 0 075 | .085 | 0.068 | 0.076 | 0.092 | 0,104 | 0.108 | 0.140 All dimenstons in inches, to convert to millimeters, multiply by 25.4 -6- [IMIS U elect MS I ELECTRONICS INC -PONICS inc 35E D BM SbS5b4bb 0000387 1 BAMSI T- 67-14 CHIP DIODES - TO ORDER PASSIVATED DIODE CHIPS . iF /VHF TUNING DIODES ADD CHIP AFTER TYPE NO, LOWEST LEAKAGE HIGH Q FOR MANY HIGHER VOLTAGE 60 VOLT ABRUPT G000 0 HYPERABRUPT HIGH Q HIGH 0 UHF VHF USES HIGH 0 GENERAL USE - AT RATIO RATIO 4e RATIO ase RATIO 040 RATIO ( Ne cts) Ste oo (e230 60 Miz Wo (c2/ca0 50 Miz TYPE 2/0300 MHz VO ColCea 50 MHz ie ca/ceo 60. Mie min/max min min/max min minfman min min/max min minityp min . min/typ min ' GC1754 51 1200 GCI755 Gt 1200 HATSISA 31 1000 GC1756 5:1 1200 HAIS16A 31 1000 GC1757 6:1 1100 HAIOT7A 31 1000 GCt758 6:1 1100 HAIS18A 32 goo GC1759 ms 1100 HAI919A 3.2 800 GC1760 mM 1000 -O5461A 2.7/3.1 600 INS461A 27/31 600 INS441 A 2.5/3.1 450 HA1920A 38 800 GCI761 nl 1000 1N5139 2.7/2.9 350 -O5462A 2.8/3.1 soo | | 1NS462A 2.8/3.1 600 1N5442A 2.5/3.1 480 HAI922A 39 800 601762 mm 1000 . -O5463A 2.8/3.1 550 | | 1NSA63A 28/31 560 1N5443A 26/3. 400 HA1924A 3:9 700 GC1763 mW 900 1N5t40 2.8/3.0 300 -O5464A 2.8/3.1 550 1N5S464A 29/31 550 INS444A = 2.6/3.1 400 HA1926A 3.9 700 GC1763 mW geo 1NS141 2.8/3.0 300 -O5465A 2.8/3.1 550 1N5465A 2.8/3.1 550 1N5445A 2.6/3.1 400 HAI928A 39 700 GC1765 WW 00 15142 2.8/3.0 250 Q5466A 298.1 500 1N5466A 29/31 500 INS44GA 2.6/3.1 350 HA1830A 4.0 600 GC1766 mM 800 1N5143 2.8/3.0 - 250 084670 2.9/3.1 500 1NSA67A 2.9/3.1 500 1NS447A = 2.6/3.1 350 -Q5SA68A 2.9/3.2 500 1NS468A 29/32 500 1NS448A =. 2.6/3.2 350 HA1934A 4.0 600 GC1767 mA 800 1N5144 3.23.4 200 .Q5469A 2.9/3.2 500 1NS469A 29/3.2 $00 INS449A 2.6/3.2 350 HAI936A 49 600 GC1768 ml 600 1N5445 3.2/3.4 200 05470A 2.9/3.2 500 1NS470A 2.9/3.2 500 (N5450A = 2.6/3.2 360 HA1938A 40 600 Gc1769 7 600 1N5146 3.23.4 200 OS471A 2973.2 450 INS471A 29/32 450 INS451A = -26/3.2 300 HA1940A 40 500 6C1770 1 600 1N5147 3.2/3.4 200 05872A 2.9/3.2 400 1NS472A 29/32 400 INS452A 2.6/3.2 250 HA1942A 40 500 1N5148 3.43.4 200 05473A 29/3.3 300 INSAT3A 29/33 300 1N5453A 2.6/3.3 200. HA1944A 40 400 O5474A 29/33 250 1NSA74A 2.9/3.3 250 INS4S4A 2.7/3.3 175 HAI946A 4-0 300 NOTE IN THIS COLUMN 05475A 2.9/3.3 225 1NS475A 25/33 228 INS455A = -27/3.3 175 HAI948A 4:0 250 ADD SUFFIX A" FOR O5476A 2.9/3.2 200 1N5476A 2.9/3.3 200 1NS456A 2.7/3.3 175 HAI950A 40 200 5% CAPACITY TOLERANCE 30 Vde@ IR 0004 uAdc 30 Vde @ IR = 10 vAde 30 Vde @ IR = 10 uAde 30 Vde @ IR = 10 uAde 60 Vde @IR 10 uAde ~ 60 Vde @ ER = 10 uAde or eVR 30Va 002 wAde @ VR = 25 Vdc 002 wade @ VR = 25 Vde 002 uAde @ VR = 25 Vide 002 wAde @ VA > 5S Vde 0.02 Ade @ Vpn 85 Vide 2.0 uAde @ Ta = 150C 20 uAde @TA = 150C 20 uAde @ Ta = 150C 2.0 uAde @ TA = 125C 2.0 uAde @ TA = 150C 300 ppmPc 300 ppm/?c 300 ppm/ec 400 ppm/oC 200 ppm/c 200 ppmi*C_ p07 p07 p07 007 a DO) Beves 90 007 HYPER C ELECTRICAL CHARACTERISTICS (TA = 25C) DIODE CAPACITANCE (pf) CAPACITANCE @C (Volts Bas) /pt @ 1 MHz TUNING RATIO (TR) | TYPE C3/pt CA/pt C&/pt cz0/pf | c3/c20 ca/ce ca/c20 ase vae VAZ " Vaz nO. min/max min/max min/max min/max min/max min/max min/max 50 MHz In=3 u 20 Vide 10 Vae CASE min Vie - min uAde max_ | uAde max 2001 18.0/22.0 7.5/10.5 3.1/3.9 5.4/6.8 160 22 0.1 2002 18.0/22.0 75/105 1.8/2.7 169 18 0.1 2101 10.5/12.5 4.3/5.7 2.0/2.3 5.0/5.8 300 22 O41 007 2102 105/12.5 4.3/5.7 20/24 4.3/5.5 200 22 0.1 ALL 2801 10.0/13.5 4.5/5.1 5.2/6.1 200 22 0.1 2802 10 0/13.5 4.5/5.3 4.9/5.8 150 22 0.1 , Please contact tory with your cr q ronics inc al