R09DS0055EJ0200 Rev.2.00 Page 1 of 8
Mar 5, 2013
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Preliminary Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Order Number Quantity Package Supplying Form
2SC5508 2SC5508-A 50 pcs (Non reel)
2SC5508-T2 2SC5508-T2-A 3 kpcs/reel
2SC5508-T2B 2SC5508-T2B-A 15 kpcs/reel
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 3.3 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PtotNote 115 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air.
THERMAL RESISTANCE
Parameter Symbol Ratings Unit
Junction to Case Resistance Rth j-c 150 °C /W
Junction to Ambient Resistance Rth j-a 650 °C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
<R>
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 2 of 8
Mar 5, 2013
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO V
CB = 5 V, IE = 0 – – 200 nA
Emitter Cut-off Current IEBO V
EB = 1 V, IC = 0 – – 200 nA
DC Current Gain hFENote 1 V
CE = 2 V, IC = 5 mA 50 70 100 –
RF Characteristics
Gain Bandwidth Product fT V
CE = 3 V, IC = 30 mA, f = 2 GHz 20 25 – GHz
Insertion Power Gain |S21e|2 V
CE = 2 V, IC = 20 mA, f = 2 GHz 14 17 – dB
Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
– 1.1 1.5 dB
Reverse Transfer Capacitance Cre Note 2 V
CB = 2 V, IE = 0, f = 1 MHz – 0.18 0.24 pF
Maximum Available Power Gain MAG Note 3 V
CE = 2 V, IC = 20 mA, f = 2 GHz – 19 – dB
Maximum Stable Power Gain MSG Note 4 V
CE = 2 V, IC = 20 mA, f = 2 GHz – 20 – dB
Gain 1 dB Compression Output
Power
PO (1 dB) V
CE = 2 V, IC = 20 mA Note 5, f = 2 GHz – 11 – dBm
3rd Order Intermodulation
Distortion Output Intercept Point
OIP3 V
CE = 2 V, IC = 20 mA Note 5, f = 2 GHz – 22 – dBm
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank FB/YFB
Marking T79
hFE Value 50 to 100
(K – √ (K2 – 1) )
S21
S12
S21
S12
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 3 of 8
Mar 5, 2013
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Thermal/DC Characteristics
Collector to Emitter Voltage V
CE
(V) Collector Current I
C
(mA)
DC Current Gain h
FE
250
200
150
100
50
0
Ambient Temperature T
A
(˚C), Case Temperature T
C
(˚C) Base to Emitter Voltage V
BE
(V)
Total Power Dissipation P
tot
(mW)
Collector Current I
C
(mA)
0 25 50 75 100 125 150
P
tot
-T
A
: Free air
P
tot
-T
A
:
Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
P
tot
-T
C
:
When case temperature
is specified
50
40
30
20
10
0 0.2 0.4 0.6 0.8 1.0 1.2
V
CE
= 2 V
50
40
30
20
10
0012345
I
B
= 50 A
100 A
150 A
200 A
250 A
300 A
350 A
400 A
450 A
500 A
0.001
200
100
10
10.01 0.1 1 10 100
V
CE
= 2 V
μ
Collector Current I
C
(mA)
μ
μ
μ
μ
μ
μ
μ
μ
μ
TOTAL POWER DISSIPATION vs. AMBIENT
TEMPERATURE, CASE TEMPERATURE COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs.
COLLECTOR CURRENT
Capacitance/fT Characteristics
0.50
0.40
0.30
0.20
0.10
0
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance Cre (pF)
0 1.0 2.0 3.0 4.0 5.0
f = 1 MHz
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
1
30
25
20
15
10
5
010 100
VCE = 3 V
f = 2 GHz
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 4 of 8
Mar 5, 2013
Gain Characteristics
Collector Current I
C
(mA) Collector Current I
C
(mA)
40
35
30
25
20
15
10
5
0
Frequency f (GHz)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
0.1 1.0 10.0
MAG
MSG
|S
21e
|
2
VCE = 2 V
IC = 20 mA
30
25
20
15
10
5
01 10 100
MSG
|
S21e
|
2
f = 1 GHz
V
CE
= 2 V
30
25
20
15
10
5
01 10 100
MSG
|S
21e
|
2
MAG
f = 2 GHz
V
CE
= 2 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Output Characteristics
Input Power P
in
(dBm)
125
100
75
50
25
0
Output Power P
out
(dBm)
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Input Power P
in
(dBm)
20
15
10
5
0
–5
Output Power P
out
(dBm)
–20 –15 –10 –5 0 5
P
out
I
C
f = 2 GHz
V
CE
= 2 V
20
15
10
5
0
–5
125
100
75
50
25
0
–20 –15 –10 –5 0 5
P
out
I
C
f = 1 GHz
V
CE
= 2 V
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 5 of 8
Mar 5, 2013
Noise Characteristics
Collector Current IC (mA) Collector Current IC (mA)
Collector Current IC (mA) Collector Current IC (mA)
Noise Figure NF (dB)
Associated Gain Ga (dB)
Associated Gain Ga (dB)
Noise Figure NF (dB)
Noise Figure NF (dB)
Associated Gain Ga (dB)
Associated Gain Ga (dB)
Noise Figure NF (dB)
6
5
4
3
2
1
01 10 100
30
25
20
15
10
5
0
NF
f = 1.0 GHz
V
CE
= 2 V
G
a
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1 10 100
G
a
NF
f = 1.5 GHz
V
CE
= 2 V
1 10 100
6
5
4
3
2
1
0
30
25
20
15
10
5
0
G
a
NF
f = 2.0 GHz
V
CE
= 2 V
1 10 100
6
5
4
3
2
1
0
30
25
20
15
10
5
0
G
a
NF
f = 2.5 GHz
V
CE
= 2 V
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
<R>
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 6 of 8
Mar 5, 2013
EQUAL NF CIRCLE
Γ
opt
1.5 dB
2.0 dB
2.5 dB
3.0 dB
4.0 dB
4.0 dB
3.5 dB
Unstable area
V
CE
= 2 V
I
C
= 5 mA
f = 1 GHz
NF
min
= 1.0 dB
Γ
opt
1.5 dB
2.0 dB
2.5 dB
3.0 dB
3.5 dB
Unstable area
V
CE
= 2 V
I
C
= 5 mA
f = 2 GHz
NF
min
= 1.1 dB
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 7 of 8
Mar 5, 2013
NOISE PARAMETERS
VCE = 2 V, IC = 3 mA VCE = 2 V, IC = 5 mA
Γopt Γopt
f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50
f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.78
0.80
0.82
0.93
1.00
1.02
1.04
1.15
21.4
20.7
20.0
17.0
15.6
15.2
14.8
13.5
0.26
0.26
0.26
0.23
0.20
0.19
0.19
0.20
31.7
32.7
34.7
57.0
78.0
86.0
94.2
138.3
0.17
0.17
0.17
0.16
0.14
0.14
0.13
0.10
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.93
0.94
0.96
1.03
1.07
1.09
1.10
1.17
22.5
21.8
21.1
18.1
16.7
16.3
15.9
14.3
0.12
0.12
0.12
0.09
0.08
0.08
0.08
0.14
28.1
28.8
31.7
71.1
106.2
118.5
130.5
–179.7
0.15
0.15
0.15
0.14
0.13
0.13
0.12
0.11
VCE = 2 V, IC = 10 mA VCE = 2 V, IC = 20 mA
Γopt Γopt
f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50 f
(GHz)
NFmin
(dB)
Ga
(dB) MAG. ANG. Rn/50
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.28
1.29
1.30
1.37
1.41
1.43
1.44
1.51
23.7
23.0
22.3
19.3
17.8
17.3
16.9
15.3
0.07
0.07
0.08
0.13
0.16
0.17
0.19
0.25
–159.4
–157.5
–155.7
–149.2
–146.1
–145.0
–143.9
–136.7
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.59
1.61
1.63
1.72
1.78
1.79
1.81
1.90
24.5
23.7
23.0
19.9
18.3
17.9
17.5
15.8
0.26
0.26
0.27
0.30
0.33
0.34
0.35
0.40
–158.1
–155.5
–153.1
–142.6
–137.3
–135.7
–134.1
–126.5
0.12
0.13
0.13
0.14
0.15
0.06
0.16
0.18
2SC5508 Chapter Title
R09DS0055EJ0200 Rev.2.00 Page 8 of 8
Mar 5, 2013
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
T79
0.59±0.05
0.11
+0.1
–0.05
0.600.65
0.650.65
1.30
1.25
2.0±0.1
12
43
1.25±0.1
2.05±0.1
0.30
+0.1
–0.05
0.40
+0.1
–0.05
0.30
+0.1
–0.05
0.30
+0.1
–0.05
(1.05)
0.5
(Top View) (Bottom View)
<R>
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History 2SC5508 Data Sheet
Description
Rev. Date Page Summary
1.00 Sep 9, 2004 − First edition issued
Throughout Renesas format is applied to this data sheet.
p.1 ORDERING INFORMATION is modified.
p.5 Up to date S-PARAMETERS.
2.00 Mar 5, 2013
p.8 Added a drawing backside to PACKAGE DIMENSIONS.
Notice
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