International Rectifier HEXFET Power MOSFET PD-9.599A IRFR420 IRFU420 Dynamic dv/dt Rating Repetitive Avalanche Rated jd _ Surface Mount (IRFR420) Voss = 500V Straight Lead (IRFU420) Available in Tape & Reel 6 Rpgion) = 3-02 @ Fast Switching e Ease of Paralleling S Ip -2 AA Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-PAK PAK TO-252A4A TO-251AA Absolute Maximum Ratings Parameter Max. Units lp @ To = 25C Continuous Drain Current, Vas @ 10 V 24 [lp @ Te = 100C | Continuous Drain Current, Ves @ 10 V 15 A | lpm | Pulsed Drain Current 8.0 [Pp @ Tc =25C_| Power Dissipation 42 W Pp @ Ta= 25C _| Power Dissipation (PCB Mount)** 25 Linear Derating Factor 0.33 Wee Linear Derating Factor (PCB Mount)** 0.020 Ves Gate-to-Source Voltage +20 | Vv Eas Single Pulse Avalanche Energy @ 400 [om lan Avalanche Current 2.4 A Ear Repetitive Avalanche Energy 42 mJ dv/dt Peak Diode Recovery dv/dt 3.5 Vins Ty, Tse Junction and Storage Temperature Range -5 to +150 C | Soldering Temperature, for 10 seconds 260 (1.6mm from case) | Thermal Resistance jo Parameter Min, | Typ. Max. Units Rasc _| Junction-to-Case = | = 3.0 Raga Junction-to-Ambient (PCB mount)** - ff - | 50 CW Rea Junctionto-Ambient _ 110 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 1181IRFR420, IRFU420 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. } Units Test Conditions Vieryoss Drain-to-Source Breakdown Voltage 500 _ = V_ | Vas=0V, Ip= 250nA AV aayoss/ATy; Breakdown Voltage Temp. Coefficient | 0.59) | VPC | Reference to 25C, Ib= 1mA Rosjon) Static Drain-to-Source On-Resistance _ _ 3.0 Q | Vas=10V, Ipb=1.4A @ Veasith) Gate Threshold Voltage 2.0 _ 4.0 V__ | Vos=Ves, Ip= 250A Dts Forward Transconductance 1.5 _ _ S| Vps=50V, lo=1.4A @ loss Drain-to-Source Leakage Current 25 HA Vns=500V, Vas-0V _ _ 250 Vos=400V, Ves=0V, Ty=125C lass Gaie-to-Source Forward Leakage _ = 100 nA Vas=20V Gate-to-Source Reverse Leakage | -100 Ves=-20V Qg Total Gate Charge _ _ 19 Ip=2.1A Qgs Gate-to-Source Charge a a 3.3 nC | Vps=400V Qoa Gate-to-Drain ("Miller") Charge _ _ 13 Vas=10V See Fig. 6 and 13 tavon) Turn-On Delay Time _ 8.0 _ Vpp=250V tr Rise Time _ 8.6 _ ns Ip=2.1A tayott) Turn-Off Delay Time _ 33 _ Ra=18Q t Fall Time _ 16 _ Rp=1200 See Figure 10 @ Lo Internal Drain Inductance _ 4.5 _ Bam oan s nH | from package if: ) Ls Internal Source Inductance ~ | 75 f and center of die contact 8 Ciss Input Capacitance 360 Vas=0V Coss Output Capacitance _ 92 _ PF | Vpg=25V Crss Reverse Transfer Capacitance _ 37 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current | | a4 MOSFET symbol (Body Diode) A showing the Ism Pulsed Source Current _ _ 80 integral reverse & (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 1.6 Vs| Ty=25C, Is=2.4A, Vas=0V tre Reverse Recovery Time 260 | 520 ns | Ty=25C, Ip=2.1A Qn Reverse Recovery Charge | 070; 14 | uC |di/dt=100A/us ton Forward Turn-On Time Intrinsic turn-on time is neglegibie (turn-on is dominated by Lg+Lp) Notes: @ Repetitive rating; pulse width limited by max. junction temperature (See Figure 11) Isps<2.4A, di/dts50A/us, VopsV(BR)DSs, Ty<150C Vpp=50V, starting Ty=25C, L=124mH Re=25Q, las=2.4A (See Figure 12) @ Pulse width < 300 us; duty cycle <2%. 1182IRFR420, IRFU420 Ip, Drain Current (Amps) Ip, Drain Current (Amps) @ Qa x |S 100 10 2 5 < g Oo 4.5Y 2 20us PULSE WIDTH 20us PULSE WIOTH Te = 25C To = 150C 00 i er a Vps, Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25C Tco=150C (Normalized) Roson} Drain-to-Source On Resistance 0.5 Vpg = SOV 20us PULSE WIDTH VGS = 10V 4 5 6 7 8 3 40 08 -40 -20 0 20 40 60 @0 100 120 140 460 Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 1183IRFR420, IRFU420 Veg = OV. F = Ciss = fgg + fgg, Cas Crss = Cga + Capacitance (pF) Ves, Gate-to-Source Voltage (volts) SEE FIGURE 13 400 10 0 4 8 412 16 20 24 Vps, Drain-to-Source Voltage (voits) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY Ros (ON) Isp, Reverse Drain Current (Amps) Ip, Drain Current (Amps) J=150C = OV INGLE PULSE 0.4 0.6 . 1.0 4.2 4 2 5 10 2 5 +02 2 5 103 Vsp, Source-to-Drain Voltage (voits) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1184IRFR420, IRFU420 Ip, Drain Current (Amps) Vos WA 2.4 rm YTi0Vv Pulse Width s 1ps 1.6 Duty Factor < 0.1% + Le Fig 10a. Switching Time Test Circuit Vps 0.8 90% \ / \ /_ | | 0.4 | | | 10% | . t t t 25 50 75 100 125 150 Vas Sh | . Tc, Case Temperature (C) taon) tr tdfony tt Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 a Thermal Response (Zajc) SINGLE PULSE ppl | (THERMAL RESPONSE) perl NOTES: 4. DUTY FACTOR, D=t1/t2 2. PEAK Tj=PoM x Zthjc + To 10 105 1074 1073 102 O.4 4 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1185IRFR420, IRFU420 Vary tp to obtain Vps> required las 1000 Ip TOP 4.4A 1.54 > soc BOTTOM 2.4A > 2 e 600 Lu . . rn 2 Fig 12a. Unclamped Inductive Test Circuit 3 a. 400 2 mo < 'p Gq 200 < uw pp = 50V Vos-_, / / 20 50 75 100 125 150 Starting Ty, Junction Temperature(C) = aS Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Q ovine aeiOOOCO EES + Gas + Qap ~ Ves Ve ama ET. MAN Charge > Ia Ib Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See pages 1512, 1513 Appendix D: Tape & Reel Information - See page 1523 International 1186 Appendix C: Part Marking Information - See page 1518