PD- 94024A IRF7424 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. VDSS ) RDS(on) max (m) ID -30V 13.5@VGS = -10V 22@VGS = -4.5V -11A -8.8A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 T o p V ie w Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -11 -9.3 -47 2.5 1.6 20 20 -55 to + 150 V mW/C V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA Maximum Junction-to-Ambient www.irf.com 1 3/29/01 http://store.iiic.cc/ IRF7424 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- --- -1.0 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 75 14 12 15 23 150 76 4030 580 410 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 13.5 VGS = -10V, ID = -11A m 22 VGS = -4.5V, I D = -8.8A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -11A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 110 ID = -11A 21 nC VDS = -15V 18 VGS = -10V --- VDD = -15V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- -2.5 --- --- -47 --- --- --- --- 40 47 -1.2 60 71 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com http://store.iiic.cc/ IRF7424 1000 1000 VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP TOP 100 10 1 -2.5V 10 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 -2.5V 1 0.1 100 Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C 10 TJ = 25 C 1 V DS = -15V 20s PULSE WIDTH 3.5 4.0 10 100 Fig 2. Typical Output Characteristics 100 3.0 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 0.1 2.5 20s PULSE WIDTH TJ = 150 C 4.5 5.0 ID = -11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRF7424 VGS = Ciss = Crss = Coss = 5000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd C, Capacitance (pF) Ciss 4000 3000 2000 Coss 1000 Crss 12 -VGS , Gate-to-Source Voltage (V) 6000 10 VDS =-24V VDS =-15V 10 8 6 4 2 0 1 ID = -11A 0 100 0 20 -VDS , Drain-to-Source Voltage (V) 40 60 80 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 TJ = 150 C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1 100us 10 1ms TJ = 25 C 0.1 0.4 TA = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.6 0.8 1.0 1 0.1 1.2 -VSD ,Source-to-Drain Voltage (V) 10ms 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRF7424 12 VDS 10 VGS RD D.U.T. -I D , Drain Current (A) RG + 8 VDD VGS 6 Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 http://store.iiic.cc/ 0.035 R DS (on) , Drain-to-Source On Resistance ( ) R DS(on) , Drain-to -Source On Resistance ( ) IRF7424 0.030 0.025 0.020 ID = -11A 0.015 0.010 2.0 4.0 6.0 8.0 0.030 0.025 VGS = -4.5V 0.020 0.015 VGS = -10V 0.010 10.0 0 10 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 50 60 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS 12V .2F .3F QGD D.U.T. +VDS VGS VG -3mA IG Charge ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit www.irf.com http://store.iiic.cc/ 2.2 120 2.0 100 ID = -250A 1.8 80 Power (W) -V GS(th) Gate Threshold Voltage(V) IRF7424 1.6 60 1.4 40 1.2 20 0 1.0 -75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) T J , Temperature ( C ) Fig 16. Typical Power Vs. Time Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 7 http://store.iiic.cc/ IRF7424 SO-8 Package Details D 5 A 8 6 7 6 5 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 6X e e1 C .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B F OOTPRINT NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER 8 www.irf.com http://store.iiic.cc/ IRF7424 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 www.irf.com 9 http://store.iiic.cc/