UNCOMPENSATED OPERATIONAL AMPLIFIER
. . . designed foruseas asumming amplifier, integrator, or amplifier
with operating characteristics as a function of the external feedback
components. For detailed information see Motorola Application
Note AN-439.
eLow Input Offset Voltage 3.0 mV max
@Low Input Offset Current 60 nA max
*Large Power-Bandwidth 20 Vp-p Output Swing at 20 kHz min
oOutput Short-Circuit Protection
eInput Over-Voltage Protection
*ClassAB Output for Excellent Linearity
0High Slew Rate 34 V/Us typ ,x.::
M
FIGURE 1-HIGH SLEW-RATE INVERTER
100k
~10k
100 k
lk
0.1 #F
51 k
oe
=
,.,
*’:’\“.‘,,<.,.,,
,.*::&?\}
y J.. ~~
&,
.>. FIGURE 3 OUTPUT LIMITING CIRCUIT
RF
qn R1
R3
=
==
MC1539
MC1439
IOPERATIONAL AMPLIF4.5R I
t.>-. .sl~$
,:f,, \.
@
Gmwnsation 8Vcc
,...+..,>.., 17
;s.
.?
Inv. Input 26Output
+
Non-lnv. 35Output Lag
Input 4
LSUFFIX
cERAMlc PACKAGE
CASE 63242
(TO-116)
n
N.C. 114 N.c.
N.C. 213 N.C.
COmwnsatiOn 312 COmpenmtiOn
Inv. Input 4-11 Vcc
Non-lnv. Input 5+10 output
VEE 69Output Lag
NC.~Nc
(VEE thru Substrate
on P2)
P2 SUFFIX
PLASTIC PACKAGE
CASE 646
(MC1439 only)
P1 SUFFIX
PLASTIC PACKAGE
CASE 626
(MC1439 only)
B
Comwnmtion 1SCo mp~nsation
Inv. Input 2-7Vcc
NOn-lnv. Input 3+6Output
v~~ 45Output Lag
@MOTOROLA INC., 1974 DS 9W4.R5
ELECTRICAL CHARACTERISTICS (VcC=+15 Vdc, VEE =-15 Vdc, TA =+25°C unles otherwim noted.)
MC1439
Symbl
116
11,~1
Iv,ol
MC15M
F
Typ. MaxCheraaterinic Unit
Mm
1.0
1.5
Typ
nput BiasCurrent
(TA =+25°C)
(TA =TIOW@)
nput Offeat Current
(TA -TIOW)
(TA =+25°C1’
0.20
0.23
+
0.20
0.23
0.50
0.70
75
60
75
150
100
150
20
20
(TA =Thigh @)
nput Off& Voltage
(TA =+25°C)
(TA =TIOW,Thigh}
1-1.0
3.0
4.0
2.0
4veregeTemperature tiefficient of Input
OffSOtVOltO~ (TA =TIOWtOThigh)
(Rs =50 a)
(Rs<1O kn)
ITCVIOI “pvPc
+
3.0
5.0
150
nput Impedanca
(f= 20 Hz) zin
Input Common-Mode Voltage Ranga
:quivalent Input Noiw Voltaga
(Rs =10 k~, NoiaaBandwidth=1.0 Hz,
f=1.0 kHz)
Vpk
IV/(Hz)’A
2ommon-Mode Rejetiion Ratio
(f= 1.0 kHz)
3pen-Loop Voltage Gain (VO=*1O V, RL=
10k~, R5 =@} (TA =+25°C tO Thigh)
(TA =TIOw)
‘owar Bandwidth (Au= 1,THD ~5%,
Vo =20 Vpp}
(RL= 2.0 k~)
{RL=l.OkQ, R5=10k)
StepRmponaa
{
Gain =1000, no overshoot,
Rl=l.OkQ, R2=l.0MQ, R3=l.OkQ,
R4=30kQ, R5= 10kQ, Cl =1000 pF /
{
Gain =1000, 15% ovarahmt, .<..
!
)’.:
il=l.OkQ, R2=l.0MQ, R3=l.0~,’
R4=0, R5= 10k~, Cl =10 $~ ‘$\.,,><
.%*~~
{
Gain =1W, no ovwshoot, !$ z:
.%<+>%.>kb.#
R1 =l.Okfi, R2=l~fi, ~*l.OkQ,
R4 =10 k~, R5 =&@~/~<~&.&2200 PF 1
,<t:’~
1
Gain =10, 15% ~[@Ot,
R1 =l.0~’;,~= lpkn, R3= l.Okn,
R4 =1.@;~,~&~ 10 ka, Cl =2~ pF 1
l.,
J;V
G@;h~ti~5%ovarahoot ,
~~;~~~ka, R2 =10 kn, R3= 5.OkQ,
:@~4~~0 Q, R5 =10 ka, Cl =2200PF }
~tp.t lm@an.a
ff =20 Hz)
110 dB
I
15,000
15,000
10
1Oo,m
1Oo,m
50
kHz
130
190
6.0
so
100
14
m
100
34
120
so
6.25
160
80
4.2
-I6.0
100
14
so
120
so
6.25
4
160
so
4.2
4.0 kn
Vpk
pvlv
150
*IO
200
Output VOltagaSwing
(RL= 2.0k~, f=1.0 kHz) Vo
*
(RL=l.OkQ, f=1.OkHz)
PositiveSupply Rebetion Ratio
(VEE constant, R5 = ~
NegativaSupply Re~ction Ratio
(Vcc mntiant, R5 =w)
POwr SupplV Current
(Vo =0) k
PSRR+
PSRR-
Icc
iEE +
50
3.0
3.0
150 50 200 pv/v
5.0
5.0
3.0
3.0
6.7
6.7
mAdc
~T,ow= 0°CforMC1439 Thigh=+7@cfOr MC1439
-55°C for MC1 539 +125°C for Mcl 53g .
mMOTOROLA Semicondu&or Products inc. _
MXIMUM RATINGS (TA =+25°C unless otherwise noted.)
Rating Symbol Value Unit
Power Supply Voltage Vcc +18 Vdc
VEE +18
Differential Input Voltage Range VIDR *(VCC +IVEEI) Vdc
Common-Mode Input Voltage Renga VICR ‘VCCI-IVEEI Vdc
Load Currant IL 15 mA ,*!.
‘*{,3,
Output Short-Circuit Duration ts Continuous es:<.\.*:<2~,
“*rit. ~
,r.,.-.>
Power Dissipation (Package Limitation) pD ~.~,*
Matal Package 660 mW
Derate above TA =+25°C ,.
4.6
Ceramic Dual In-Line Package 750 mW
Derate above TA =+25°C 6.0 mW/°C
Plastic Dual In-Line PackagesMC1439 625
Derate above TA =+25°C 5.0 mW~°C ‘{~t~j:
..
Operating Temparatura Range MC1539 TA -55 to+ 125
MC1439 oto +75
Storage Temperature Range \
Tstg ~, :ti,$i~”~\.oc
,., ~$:.+,,,.,,..
Metal and Ceramic P=kages 65to+15*:,:; k...’*”
Plastic Packages -55 to+, 2&~$:“$
\,i*::k,
INVERTING
o
0+NON
INVERTING
I
VEE b
FIGURE 6-TEST CIRCUIT
R2
&
( )
R1
R3
=
@
OUTPUT
LAG
TYPICAL CHARACTERISTICS (continued)
(Vcc=+15 Vdc,VEE=-15 Vdc, TA =+25°C, unless otherwise noted.)
FIGURE 7 LARGE-SIGNAL SWING versus FREQUENCY
f, FREQUENCY(Hz)
FIGURE 9-OUTPUT VOLTAGE
SWING versusLOAD RESISTANCE
9!
~
,. ~—
o~ IIIIiIIIII I
*12 *13 i14 *15 +16 k17
SUPPLY VOLTAGE {VOLTS}
@
*I8
FIGURE 8 OPEN-LOOP VOLTAGE GAIN versus FREQUENCY
u
z100 ,’, 1111111 1 I1 1
160
160
20010 100 l.Ok 10k 100k 1.OM
f, FREQUENCY (Hz)
FIGURE 12- CLOSED-LOOP GAIN versus FREQUENCY
l.Uk 10k 100k 1.0 M10 M
ACL =Closed-Loop Gain f, FREaUENCY (Hz)
Semiconductor Pmdu&s Inc.
TYPICAL CHARACTER ISTICS (continued)
(VCC=+15 Vdc, VEE =-15 Vdc, TA =+25°C, unlessotherwise noted.)
FIGURE 13 –AcL* =1RESPONSE versusTEMPERATURE FIGURE 14 ACL =10 RESPONSE versusTEMPERATURE
1.0 k10 k 100k 1.0 M10M
f, FREQUENV{
(kHz)
dtlo~ lok I
,“ ~\,
:. ‘:$\, ~
kh)i,t+,$
~.$:t
,,,,., .,.+
FIGURE 15– ACL= 100 RESPONSE versusTEMPERATUFf E$lG~~~ 16 ACL =1000 RESPONSE versusTEMPERATURE
~50
z45
40
35
10 100 1,0 k10 k
f, FREQUENCY (Hz)
*ACL =Closed-Loop Gain
@MOTOROLA
100k
1.0 10 100 1.OM 10M
f, FREaUENCY (kHz)
FIGURE 18 –OUTPUT NO ISEversus SOURCE RESISTANCE
0.1 1.0 10 100
Rs, SOURCE RESISTANCE (k OHMS)
TYPICAL CHARACTERISTICS’ (continued)
(Vcc =+15 Vdc, VEE =-15 Vdc, TA =+25°C, unless otherwise noted.]
FIGURE 19 POWER DISSIPATION versus TEMPERATURE
130 I
Vo=o
120 *15 VSUPPLIES—
110
100 .
90 - - ~-
an
70
60
50
-55 -25 0+25 %0 t75 +100 +125
TA, AMBIENT TEMPERATURE (OC)
FIGURE 21 POWER BANDWIDTH
(LARGE-SIGNAL SWING versus FREQUENCY)
f, FREOUENCY (Hz)
@MOTOROLA
1.0 M
FIGURE 20 POWER DISSIPATION versus
,POWER SUPPLY VOLTAGE
12 13 14 15 16 17 18
VCC, IVEEI, SUPPLY VOLTAGE (VOLTS)
FIGURE 24 COMMON-MODE REJECTION RATIO
versus TEMPERATURE
I
II
() --w -
+11 V
AVCM =20 log ~-390 2200 pF
ei” CM q“
_CMRR =[AVCM AVOI] eO
-11 Vzt
*15 VSUPPLIES_
-55 -25 0t25 t50 t75 +100 +125
Semicondudor
TA, AMBIENT TEMPERATURE (OCl
Products Inc.
m1*
FIGURE 25- VOLTAGE-FOLLOWER PULSE RESPONSE
I
I
“3 ....=d‘clmGM5kz_..l.o.
Fm detsild informlion SE Motmob
I I
Return@@Vo Retwn
rI
~rcuit diagrams utifizing Motrrrofa products are incfuded as ameans is bef ieved to be entirefy rel iabfe. Howavar, no rasponsibifity is
of illustrating typical semiconductor applications; conquently, a- med for inaccuracies. Furthermore, such information does not
complete information sufficient for construction pu rpox is not convey to the purchaser of the semiconductor devices described any
n~eeeerify given. The information has bean carefulfy checked and ficense under the patent rights of Motorofa 1nc. or Otier%
TYPICAL APPLICATIONS (continuad)
FiGURE 30- LOAD REGULATION FOR
CIRCUIT OF FIGURE ~
,.,,,:,
‘, ,.,.
100 150 200 250 :
LOAD CURRENT (MILLIAMPER=)
FIGURE 31 REGULATOR OUTPUT VOLTAGE
(underprrlsadloadcondition)
Lwd 4mnnecled to a~.
MILLIMETERS IINCHES
DIM MIN IMAx [MIN [MAX
MILLIMETERS INCHES
DIM MIN [MAX ~M,N ]~x
H
R16.s 19.9 a660 0.785
5.s 7.11 020 D.2~
:
0O:ml :Yu 0.;15 I;%
F0.77 1.77 0.0S0 0.010
G2.64 Ssc 0.100 Ssc
J0.20s 0.ss1 O.m ao15
K2.34 -0.100 -
L7.s2 Ssc O.w Ssc
M-1P 150
N0.51 0.76 0,;20 UOSD
P-sm– 0.s25
All JEOEC timew”omwd MtSE spply.
PL+
I14+ ! ! NOTE:
H
OIMENSION “~ TO CENTER OF
Awji
:: LEADS WHEN FORMEO PARALLEL.
NjI,
H~~G~ S~TjNG 2“ ,Jk
PLANE -
.-@ MOTOROLA
MILLIMETERS INCHES
DIM M]N MAx MIN M&x
A1S.16 16.S0 0.715 0.740
B6.10 6.60 0.240 a260
c4.06 4.57 0.160 0.180
D0.3s 0.51 ao15 aozo
F1.02 1.52 ao40 aoso
GZ64 Ssc aloo Ssc
HlW 1.83 ao62 0.072
JDa a30 am 0.012
K2.92 X43 al15 0.1s5
L7.s7 7.87 LL290 0.310
MlW -]00
Noil 1.02 aozo ao40
P0.13 0.ss aoD5 0.015
a0.51 0.76 aozo 0.030
I
&NOTE%
1. LW~LWmlM a13m
——___ [~) RADIUSOFTRUE
J~mOH ATSEATIMG
PLAWEAT MAXIMUM
WTERIAL cOuOmoH.
Ji
ZOIUEM,OH ‘L-TO
CEWER OF LW
WEM FORUEO
MPAWLLEL
~WFFIX
PLA2T#C PACKAGE
C*E 626
MOTE
ONAEWON ..L” TO CEWER OF
LUOS WH~ FOflUm PARALLEL.
Semiconductor Products lnc.
Printed In Swltierland