This is information on a product in full production.
January 2015 DocID023184 Rev 4 1/8
EMIF06-USD04F3
6-line low capacitance IPAD™ for micro-SD card
with EMI filtering and ESD protec tion
Datasheet − production data
Features
•E MI lo w -p ass filter
•ESD protection ±8 kV (IEC 61000-4-2)
•Integrat ed pull up resistors to prevent b us
floating when no card is connected
•208 MHz clock frequency compatible with
SDR104 mode (SD3.0)
•Lead-free package
Benefits
•Low power consumption
•Easy layout thanks to smart pin-out
configuration
•Very low PCB space consumption
•High reliability offered by monolithic integration
•Reduction of parasitic elements thanks to CSP
integration
Complies wit h the following standards:
•IEC 61000-4-2 level 4:
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
Description
The EMI F06-USD04F 3 is a highly integrated
device based on IPAD technology offering two
functions: ESD protection to comply with IEC
standard, and EMI filtering to reject mobile phone
frequencies.
Figure 1. Pin configuration (bump side)
TM: IPAD is a trade mark of STMicroele ctronics
Flip C h ip
(15 bump s)
1234
A
B
C
D
www.st.com
Characteristics EMIF06-USD04F3
2/8 DocID023184 Rev 4
1 Characteristics
Figure 2. EMIF06-USD04F3 Schematic
Table 1. Absolute maxim um rating s (Tamb = 25 °C)
Symbol Parameter Value Unit
VPP
ESD dischar ge IEC 61000-4-2, level 4
(on pins Vcc, SDclk, SDcmd, SDdat0, SDdat1, SDdat2, SDdat3
Air discharge, external pins
Contact discharge, external pins
ESD dischar ge IEC 61000-4-2, level 1
(on pins dat0, dat1, clk, cmd,dat3, dat2)
Air discharge, internal pins
Contact discharge, internal pins
15
8
2
2
kV
TjMaximum junction temperature 125 °C
Top Oper ati ng temperatur e range - 30 to + 85 °C
Tstg Storage tem perature ran ge - 55 to + 150 °C
Tabl e 2. Pin c o nf i gurat io n
Pin Signal Pin Signal
A1 dat0 C1 Cmd
A2 dat1
A3 SDdat1 C3 GND
A4 SDdat0 C4 SDcmd
B1 clk D1 dat3
B2 Vcc D2 dat2
B3 GND D3 SDdat2
B4 SDclk D4 SDdat3
DocID023184 Rev 4 3/8
EMIF06-USD04F3 Characteristics
8
Figure 3. Electrical characteri sti cs (definition s)
Ta ble 3. Electrical characteristics (values , Tamb = 25 ° C )
Symbol Param eter Test conditi ons Min. Typ. Max. Unit
VBR Breakdown voltage IR = 1 mA 14 20 V
IRM Lea kage current at VRM VRM = 3 V 100 nA
R1, R2, R3,
R4, R5, R6 Serial resistance Toleranc e ±10%, matching ±2% 40 Ω
R9, R10, R11,
R12 Pull -up resist ance Toleranc e ±10%, matching ±2% 50 kΩ
R13 Pull-up resistance on cm d Toleranc e ±10% 15 kΩ
Cline Data line capacitance
V = 0 V, F = 10 MHz, VOSC = 30 mV 10 12
pF V = 1.8 V, F = 10 MHz, VOSC = 30 mV 7.5 10
V = 2.9 V, F = 10 MHz, VOSC = 30 mV 9
Symbol Parameter
V = Breakdown voltage
V = Stand-off voltage
BR
RM
I = Leakage current at V
RM RM
=Line capacitance
Cline
V
I
VCLVBR VRM
IRM
IPP
Figure 4. Attenuation versu s frequency Figure 5. Analog cros sta lk vers us frequenc y
100 K
Clk Data0
Data2
Cmd2
1M 10M 100M 1G
S21(dB)
0
-10
-5
-15
-20
-25
-30
F(Hz)
Data1
Data3
100 K
Clk-Data0 Data3-SDData0
1M 10M 100M 1G
XTalk(dB)
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
F(Hz)
Characteristics EMIF06-USD04F3
4/8 DocID023184 Rev 4
Figure 8. Line capacitance versus frequenc y and bias vo ltage (typical values)
Figure 6. ESD response to IEC 61000-4-2
(+8 kV contact discharge ) Figure 7. ESD response to IEC 61000-4-2
(-8 kV cont act discharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
1 10 100
F(MHz)
VBIAS = 0V
V
BIAS = 1.8V
VBIAS = 2.9V
Cline (pF)
V
osc= 30 mVRMS
T
AMB= 25 °C
DocID023184 Rev 4 5/8
EM IF06-USD04F3 Packag e informati on
8
2 Package information
•Epoxy meets UL94, V0
•Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® pack ages, depe nding on their level of environmen tal co mpl iance. ECOPA CK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark .
Figure 9. Package dimensions
Figure 10. Footprint Figure 1 1. Marking
1.54 mm ± 40 µm
1.54 mm ± 40 µm
255 µm ± 40
400 µm ± 40
400 µm ± 40
170 µm ± 10
170 µm ± 10
500 µm ± 50
x
y
z
w
x
w
Dot, ST logo
ECOPACK status
xx = marking
yww = datecode
y = year,
ww = week
z = manufacturing
location
Pack age informa tion EM IF06-US D04F3
6/8 DocID023184 Rev 4
Figure 12. Tape and reel specification
Dot identifying Pin A1 location
User direction of unreeling
All dimensionsare in mm
4.0 ±0.1
4.0 ±0.1
2.0 ±0.05
8.0 +0.3/-0.1
1.75 ±0.1
3.5 ±0.05
Ø 1.55 ±0.05
0.59 ±0.05 1.65 ±0.05
0.20 ±0.02
ST
ST
ST
xxz
yww
xxz
yww
xxz
yww
E
E
E
1.65 ±0.05
ST
ST
ST
xxz
yww
xxz
yww
xxz
yww
E
E
E
DocID023184 Rev 4 7/8
EM IF06-USD04F3 Order ing inform ation
8
3 Ordering information
Figure 13. Ordering information scheme
Note: More inform ation is available in the STmicroelectron ics Application notes:
AN2348: “Flip Chip: Package description and recom me ndat ions for use”
AN1751: “EMI Filters: Recommendat ions and m eas urem ents”
AN4541: “EMI Filters for SD3.0 card: Hi gh speed SD card protection and filtering devices”
4 Revision history
Table 4. Ordering information
Order code Mar king Package Wei ght Base qty Delivery mode
EMIF06-USD04F3 JZ Flip Chip 2.6 mg 5000 Tape and reel 7”
EMIF 06 - USD 04 F3
EMI filter
Number of lines
Application
USD = Micro SD card
Version
04 = Design version
Package
F = Flip chip
3= Lead-free, pitch = 400 µm, bump = 255 µm
Table 5. Document revision history
Date Revision Changes
09-May-2012 1First issue.
27-Jun-2012 2Added toler ances in Figure 12.
30-Jun-2014 3Updated Figure 4, Figure 5 and breakdown voltage value in Table 3.
06-Jan-2015 4Added mention for new AN4541.
EMIF06-USD04F3
8/8 DocID023184 Rev 4
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