NJG1139UA2
- 1 -
Ver.2013-04-22
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
I
II
I GENERAL DESCRIPTION I
II
I PACKAGE OUTLINE
The NJG1139UA2 is a low noise amplifier GaAs MMIC
designed for mobile digital TV application (470~770 MHz).
This IC has a LNA pass-through function to select high gain
mode or low gain mode by single bit control.
Also, the ESD protection circuit is integrated into the IC to
achieve high ESD tolerance.
An ultra-small and ultra-thin package of EPFFP6-A2 is adopted.
I
II
I APPLICATIONS
Wide band application from 470MHz to 770MHz
Mobile TV and Digital TV applications
Mobile phone and tablet PC applications
I
II
I FEATURES
G Low voltage operation +1.8V typ.
G Low voltage control +1.8V typ.
G Package EPFFP6-A2 (Package size: 1.0mm x 1.0mm x 0.37mm typ.)
G External matching parts 2pcs.
[High gain mode]
G Low current consumption 3.5mA typ.
G High gain 14.0dB typ.
G Low noise figure 1.2dB typ.
G High input IP3 -4.0dBm typ.
[Low gain mode]
G Low current consumption 11µA typ.
G Gain (Low loss) -2.0dB typ.
G High input IP3 +30.0dBm typ.
I
II
I PIN CONFIGURATION
I
II
I TRUTH TABLE
“H”=V
CTL(H)
, “L”=V
CTL(L)
V
CTL
LNA ON Bypass LNA mode
H ON OFF High Gain mode
L OFF ON Low Gain mode
Pin Connection
1. GND
2. VDD
3. RFOUT
4. VCTL
5. GND
6. RFIN
NJG1139UA2
(Top
654
23
Logic
circuit
1
RFIN
RFOUT
VCTL
VDD
GND
GND
1PIN INDEX
Note: Specifications and description listed in this datasheet are subject to change without notice.
NJG1139UA2
- 2 -
I
II
I ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50 ohm
PARAMETER SYMBOL
CONDITIONS RATINGS UNITS
Drain voltage
V
DD
5.0 V
Control voltage
V
CTL
5.0 V
Input power
P
IN
V
DD
=1.8V +15 dBm
Power dissipation
P
D
4-layer FR4 PCB with through-hole
(101.5x114.5mm), T
j
=150°C
590 mW
Operating temperature
T
opr
-40~+95 °C
Storage temperature
T
stg
-55~+150 °C
I
II
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
General conditions: V
DD
=1.8V, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX
UNITS
Operating voltage V
DD
1.7 1.8 3.6 V
Control voltage (High)
V
CTL(H)
1.5 1.8 3.6 V
Control voltage (Low)
V
CTL(L)
0 0 0.4 V
Operating current1
I
DD1
RF OFF, V
CTL
=1.8V - 3.5 5.0 mA
Operating current2
I
DD2
RF OFF, V
CTL
=0V - 11 25 µA
Control current
I
CTL
RF OFF, V
CTL
=1.8V - 6 10 µA
NJG1139UA2
- 3 -
I
II
I ELECTRICAL CHARACTERISTICS2 (High Gain mode)
General conditions: V
DD
=1.8V, V
CTL
=1.8V, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX
UNITS
Operating frequency
f
RF
470 620 770 MHz
Small signal gain1
Gain1 11.0 14.0 17.0 dB
Noise figure NF Exclude PCB & connector
losses
*1
- 1.2 1.7 dB
Input power at 1dB gain
compression point1
P
-1dB(IN)
1
-18.0
-12.0
- dBm
Input 3rd order
intercept point1
IIP3_1 f1=f
RF
, f2=f
RF
+100kHz,
P
IN
=-25dBm -8.0 -4.0 - dBm
RF IN VSWR1
VSWRi1
- 1.5 4.9 -
RF OUT VSWR1
VSWRo1
- 1.5 3.0 -
I
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I ELECTRICAL CHARACTERISTICS3 (Low Gain mode)
General conditions: V
DD
=1.8V, V
CTL
=0V, T
a
=+25°C, Z
s
=Z
l
=50 ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX
UNITS
Operating frequency
f
RF
470 620 770 MHz
Small signal gain2
Gain2
Exclude PCB & connector
losses*2
-2.5 -2.0 - dB
Input power at 1dB gain
compression point2
P
-1dB(IN)
2
+5.0 +15.0
- dBm
Input 3rd order
intercept point2
IIP3_2 f1=f
RF
, f2=f
RF
+100kHz,
P
IN
=-8dBm +15.0
+30.0
- dBm
RF IN VSWR2
VSWRi2
- 1.5 2.5 -
RF OUT VSWR2
VSWRo2
- 1.5 2.5 -
*1 Input PCB and connector losses: 0.033dB(at 470MHz), 0.047dB(at 770MHz)
*2 Input & output PCB and connector losses: 0.057dB(at 470MHz), 0.085dB(at 770MHz)
NJG1139UA2
- 4 -
I
II
I TERMINAL INFORMATION
No. SYMBOL
DESCRIPTION
1 GND Ground terminal. These terminals should be connected to the ground
plane as close as possible for excellent RF performance.
2 VDD
This terminal is a power supply terminal of LNA and the logic circuit.
Inductor L2 as shown in the application circuit is a part of an external
matching circuit, and also provide DC power to LNA.
3 RFOUT RF input terminal.
Since this IC is integrated an input DC blocking capacitor.
4 VCTL Control voltage supply terminal.
5 GND Ground terminal. These terminals should be connected to the ground
plane as close as possible for excellent RF performance.
6 RFIN
RF input terminal. The RF signal is input through external matching
circuit connected to this terminal.
Since this IC is integrated an input DC blocking capacitor.
NJG1139UA2
- 5 -
I
II
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: T
a
=+25°C, V
DD
=1
.8V
, V
CTL
=1.8V, Z
s
=Z
l
=50 ohm, with application circuit
-30
-25
-20
-15
-10
-5
0
5
10
15
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-12.0dBm
Pout
Pout vs. Pin
(f=620MHz)
0
5
10
15
20
0
5
10
15
20
-40 -35 -30 -25 -20 -15 -10 -5 0
Gain (dB)
IDD (mA)
Pin (dBm)
IDD
Gain
P-1dB(IN)=-12.0dBm
Gain, I
DD
vs. Pin
(f=620MHz)
-80
-60
-40
-20
0
20
-30 -25 -20 -15 -10 -5 0 5 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=-3.1dBm
Pout, IM3 vs. Pin
(f1=620MHz, f2=f1+100kHz)
Pout
IM3
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
400 500 600 700 800 900
Gain,NF vs.frequency
(f=400~900MHz)
Gain (dB)
NF (dB)
freqency (MHz)
Gain
NF
(NF:Exclude PCB,Connector Losses)
-20
-15
-10
-5
0
400 500 600 700 800 900
P-1dB(IN) (dBm)
frequency (MHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(f=400~900MHz)
-10
-5
0
5
10
15
20
400 500 600 700 800 900
OIP3, IIP3 (dBm)
frequency (MHz)
OIP3
IIP3
OIP3, IIP3 vs. frequency
(f1=400~900MHz, f2=f1+100kHz, Pin=-25dBm)
NJG1139UA2
- 6 -
I
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I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: T
a
=+25°C, V
CTL
=1.8V, Z
s
=Z
l
=50 ohm, with application circuit
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
1 1.5 2 2.5 3 3.5 4
Gain (dB)
NF (dB)
V
DD
(V)
Gain, NF vs. V
DD
(f=620MHz)
Gain
NF
-10
-5
0
5
10
15
20
25
1 1.5 2 2.5 3 3.5 4
OIP3, IIP3 (dBm)
V
DD
(V)
OIP3, IIP3 vs. V
DD
(f=620MHz)
IIP3
OIP3
1
1.5
2
2.5
3
1 1.5 2 2.5 3 3.5 4
VSWR
V
DD
(V)
VSWR vs. V
DD
(f=620MHz)
VSWRi
VSWRo
0
2
4
6
8
10
1 1.5 2 2.5 3 3.5 4
I
DD
vs. V
DD
(RF off)
I
DD
(mA)
V
DD
(V)
-20
-15
-10
-5
0
1 1.5 2 2.5 3 3.5 4
P-1dB(IN) (dBm)
V
DD
(V)
P-1dB(IN) vs. V
DD
(f=620MHz)
NJG1139UA2
- 7 -
I
II
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: V
DD
=1
.8V
, V
CTL
=1.8V, Z
s
=Z
l
=50 ohm, with application circuit
0
5
10
15
20
0 5 10 15 20
K factor vs. Temperature
(f=50MHz~20GHz)
-40(
o
C)
-20(
o
C)
0(
o
C)
25(
o
C)
60(
o
C)
85(
o
C)
95(
o
C)
K factor
Frequency (GHz)
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
-40 -20 0 20 40 60 80 100
Gain (dB)
NF (dB)
Temperature (
o
C)
Gain
NF
Gain, NF vs. Temperature
(f=620MHz)
-20
-15
-10
-5
0
-40 -20 0 20 40 60 80 100
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
P-1dB(IN) vs. Temperature
(f=620MHz)
-10
-5
0
5
10
15
20
-40 -20 0 20 40 60 80 100
OIP3, IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
OIP3, IIP3 vs. Temperature
(f1=620MHz, f2=f1+100kHz, Pin=-25dBm)
1
1.5
2
2.5
3
-40 -20 0 20 40 60 80 100
VSWR
Temperature (
o
C)
VSWR vs. Temperature
(f=620MHz)
VSWRi
VSWRo
0
2
4
6
8
10
-40 -20 0 20 40 60 80 100
I
DD
(mA)
Temperature (
o
C)
I
DD
vs. Temperature
(RF off)
NJG1139UA2
- 8 -
I
II
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: T
a
=+25°C, V
DD
=1
.8V
, V
CTL
=1.8V, Z
s
=Z
l
=50 ohm, with application circuit
S11, S22
S21, S12 (50MHz~20GHz) S11, S22 (50MHz~20GHz)
S21, S12
Zin, Zout VSWRi, VSWRo
NJG1139UA2
- 9 -
I
II
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: T
a
=+25°C, V
DD
=1
.8V
, V
CTL
=0V, Z
s
=Z
l
=50 ohm, with application circuit
-5
-4
-3
-2
-1
0
-20 -15 -10 -5 0 5 10 15 20
0
2
4
6
8
10
I
DD
(mA)
Pin (dBm)
Gain (dB)
Gain
I
DD
P-1dB(IN)=+15.0dBm
Gain, I
DD
vs. Pin
(f=620MHz)
-20
-15
-10
-5
0
5
10
15
20
-20 -15 -10 -5 0 5 10 15 20
Pout (dBm)
Pin (dBm)
P-1dB(IN)=+15.0dBm
Pout
Pout vs. Pin
(f=620MHz)
-100
-80
-60
-40
-20
0
20
40
-20 -10 0 10 20 30
Pout, IM3 (dBm)
Pin (dBm)
IIP3=+30.4dBm
Pout, IM3 vs. Pin
(f1=620MHz, f2=f1+100kHz)
Pout
IM3
-5
-4
-3
-2
-1
0
400 500 600 700 800 900
Gain vs. frequency
(f=400~900MHz)
Gain(dB)
frequency(MHz)
Gain
(Gain:Exclude PCB,Connector Losses)
0
5
10
15
20
400 500 600 700 800 900
P-1dB(IN) (dBm)
frequency (MHz)
P-1dB(IN)
P-1dB(IN) vs. frequency
(f=400~900MHz)
22
24
26
28
30
32
34
400 500 600 700 800 900
OIP3, IIP3 (dBm)
frequency (MHz)
OIP3
IIP3
OIP3, IIP3 vs. frequency
(f1=400~900MHz, f2=f1+100kHz, Pin=-8dBm)
NJG1139UA2
- 10 -
I
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I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: T
a
=+25°C, V
CTL
=0V, Z
s
=Z
l
=50 ohm, with application circuit
1
1.1
1.2
1.3
1.4
1.5
1 1.5 2 2.5 3 3.5 4
VSWR
VDD (V)
VSWR vs. V
DD
(f=620MHz)
VSWRi
VSWRo
0
5
10
15
20
25
1 1.5 2 2.5 3 3.5 4
I
DD
vs. V
DD
(RF off)
I
DD
(uA)
V
DD
(V)
-5
-4
-3
-2
-1
0
1 1.5 2 2.5 3 3.5 4
Gain (dB)
VDD
(V)
Gain vs. V
DD
(f=620MHz)
0
5
10
15
20
1 1.5 2 2.5 3 3.5 4
P-1dB(IN) (dBm)
VDD (V)
P-1dB(IN) vs. V
DD
(f=620MHz)
22
24
26
28
30
32
34
1 1.5 2 2.5 3 3.5 4
OIP3, IIP3 (dBm)
VDD (V)
OIP3, IIP3 vs. V
DD
(f=620MHz)
IIP3
OIP3
NJG1139UA2
- 11 -
I
II
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: V
DD
=1
.8V
, V
CTL
=0V, Z
s
=Z
l
=50 ohm, with application circuit
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
-40 -20 0 20 40 60 80 100
Gain (dB)
Temperature (
o
C)
Gain vs. Temperature
(f=620MHz)
0
5
10
15
20
-40 -20 0 20 40 60 80 100
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
P-1dB(IN) vs. Temperature
(f=620MHz)
24
26
28
30
32
34
-40 -20 0 20 40 60 80 100
OIP3, IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
OIP3, IIP3 vs. Temperature
(f1=620MHz, f2=f1+100kHz, Pin=-8dBm)
1
1.1
1.2
1.3
1.4
1.5
-40 -20 0 20 40 60 80 100
VSWR
Temperature (
o
C)
VSWR vs. Temperature
(f=620MHz)
VSWRin
VSWRout
NJG1139UA2
- 12 -
I
II
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: V
DD
=1
.8V
, V
CTL
=0V, Z
s
=Z
l
=50 ohm, with application circuit
0
2
4
6
8
10
-40 -20 0 20 40 60 80 100
I
DD
(uA)
Temperature (
o
C)
I
DD
vs. Temperature
(RF off)
0
5
10
15
20
0 5 10 15 20
K factor vs. Temperature
(f=50MHz~20GHz)
-40(
o
C)
-20(
o
C)
0(
o
C)
25(
o
C)
60(
o
C)
85(
o
C)
95(
o
C)
K factor
Frequency (GHz)
0
1
2
3
4
5
0 0.5 1 1.5 2
I
DD
vs. V
CTL
(RF off)
-40 (
o
C)
-20 (
o
C)
0 (
o
C)
25 (
o
C)
60 (
o
C)
85 (
o
C)
95 (
o
C)
I
DD
(mA)
VCTL (V)
NJG1139UA2
- 13 -
I
II
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: T
a
=+25°C, V
DD
=1
.8V
, V
CTL
=0V, Z
s
=Z
l
=50 ohm, with application circuit
S11, S22
S21, S12 (50MHz~20GHz) S11, S22 (50MHz~20GHz)
S21, S12
Zin, Zout VSWRi, VSWRo
NJG1139UA2
- 14 -
I
II
I APPLICATION CIRCUIT
I
II
I TEST PCB LAYOUT
* Please place all external parts around the IC as close as possible.
Parts ID
Notes
L1, L2
MURATA
LQP03T
series
C1
MURATA
GRM03
series
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z
0
=50
ohm
)
PCB SIZE=14.0mm×14.0mm
Parts List
(Top View)
RF OUT
V
CTL
L1
18nH
V
DD
L2
27nH
C1
1000pF
RF IN
654
23
Logic
circuit
1
RFIN
RFOUT
VCTL
VDD
GND
GND
1PIN INDEX
RF OUT
RF IN
V
DD
V
CTL
L1
L2
C1
(Top View)
1PIN INDEX
NJG1139UA2
- 15 -
I
II
I PACKAGE OUTLINE (EPFFP6-A2)
Unit : mm
Substrate
: FR4
Terminal treat
: Au
Molding material : Epoxy resin
Weight (typ.)
: 0.855mg
Caution
s
on using
this
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
•
To
wast
e
th
is
product, please obe
y the relati
ng
law
of
your
country.
This product may be damaged with electric static discharge (ESD) or spike voltage. P
lease
hand
le with care to avoid these damages
.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative
usages of the product and not intended for
the guarantee or permission of any right
including the industrial rights.
